公开(公告)号：EP1570511A4

公开(公告)日：2009-06-10

申请号：EP03786848

申请日：2003-11-19

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/26506 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624 ,  H01L21/76251 ,  Y10S438/933

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：WO2004047150A3

公开(公告)日：2004-06-24

申请号：PCT/US0336969

申请日：2003-11-19

Applicant: IBM ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/26506 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624 ,  H01L21/76251 ,  Y10S438/933

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearlypseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operatiing with this method is dislocation nucleation at He-inducedplatelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

Abstract translation: 在Si或绝缘体上硅（SOI）衬底上获得薄（小于300nm）应变弛豫Si1-xGex缓冲层的方法。 这些缓冲层具有失配位错的均匀分布，其缓解了应变，表面光滑平滑，以及低穿透位错（TD）密度，即小于10 6 cm 2。 该方法开始于伪晶体或近似假晶Si1-xGex层的生长，即，不具有失配位错的层，然后将其注入He或其它轻元素，随后退火以实现实质的应变弛豫。 用这种方法操作的非常有效的应变松弛机理是位于Si（001）表面Si / Si1-xGex界面以下的He诱导的电镀层（不是气泡）的位错成核。

公开(公告)号：WO2004061921A8

公开(公告)日：2004-11-25

申请号：PCT/US0338334

申请日：2003-12-02

Applicant: IBM

Inventor： COHEN GUY M ,  CHRISTIANSEN SILKE H

IPC: H01L21/20 ,  H01L21/762

CPC classification number: H01L21/76243 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624

Abstract: A method for fabricating a strained Si layer on insulator, a structure of the strained Si layer on insulator, and electronic systems comprising such layers are disclosed. The method comprises the steps of forming epitaxially a relaxed SiGe layer on top of a Si layer on insulator; transforming the crystalline Si layer and the lower portion of the crystalline relaxed SiGe layer into an amorphous material state by ion implantation; and re-crystallizing the amorphous material from the crystalline top portion of the SiGe layer. The larger lattice constant of the SiGe seed layer forces a tensile strain in the Si layer.

Abstract translation: 公开了一种用于制造绝缘体上的应变Si层的方法，绝缘体上的应变Si层的结构以及包括这种层的电子系统。 该方法包括以下步骤：在绝缘体上的Si层的顶部上外延地形成弛豫SiGe层; 通过离子注入将晶体Si层和晶体松弛SiGe层的下部分转换成非晶材料状态; 以及从SiGe层的晶体顶部重新结晶无定形材料。 SiGe籽晶层的较大晶格常数迫使Si层中的拉伸应变。

公开(公告)号：WO2005067677A2

公开(公告)日：2005-07-28

申请号：PCT/US2005000072

申请日：2005-01-04

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  CHAN KEVIN K ,  CHIDAMBARRAO DURESETI ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  DOMENICUCCI ANTHONY G ,  LEE KAM-LEUNG ,  MOCUTA ANDA C ,  OTT JOHN A ,  OUYANG QIQING C

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.

Abstract translation: 应变Fin场效应晶体管（FinFET）（及其形成方法）包括具有侧壁的松弛的第一材料和形成在第一材料的侧壁上的应变的第二材料。 松弛的第一材料和应变的第二材料形成FinFET的鳍。

公开(公告)号：WO2004061921A3

公开(公告)日：2004-10-14

申请号：PCT/US0338334

申请日：2003-12-02

Applicant: IBM

Inventor： COHEN GUY M ,  CHRISTIANSEN SILKE H

IPC: H01L21/20 ,  H01L21/762

CPC classification number: H01L21/76243 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624

Abstract: A method for fabricating a strained Si layer on insulator, a structure of the strained Si layer on insulator, and electronic systems comprising such layers are disclosed. The method comprises the steps of forming epitaxially a relaxed SiGe layer on top of a Si layer on insulator; transforming the crystalline Si layer and the lower portion of the crystalline relaxed SiGe layer into an amorphous material state by ion implantation; and re-crystallizing the amorphous material from the crystalline top portion of the SiGe layer. The larger lattice constant of the SiGe seed layer forces a tensile strain in the Si layer.

Abstract translation: 公开了一种用于制造绝缘体上的应变Si层的方法，绝缘体上的应变Si层的结构以及包括这些层的电子系统。 该方法包括以下步骤：在绝缘体上的Si层的顶部上外延形成松弛的SiGe层; 通过离子注入将晶体Si层和晶体弛豫SiGe层的下部分转变成非晶材料状态; 并且从SiGe层的晶体顶部重新结晶无定形材料。 SiGe种子层的较大晶格常数迫使Si层中的拉伸应变。

公开(公告)号：DE60331473D1

公开(公告)日：2010-04-08

申请号：DE60331473

申请日：2003-12-02

Applicant: IBM

Inventor： COHEN GUY M ,  CHRISTIANSEN SILKE H

IPC: H01L21/20 ,  H01L21/762

Abstract: A method for fabricating a strained Si layer on insulator, a structure of the strained Si layer on insulator, and electronic systems comprising such layers are disclosed. The method comprises the steps of forming epitaxially a relaxed SiGe layer on top of a Si layer on insulator; transforming the crystalline Si layer and the lower portion of the crystalline relaxed SiGe layer into an amorphous material state by ion implantation; and re-crystallizing the amorphous material from the crystalline top portion of the SiGe layer. The larger lattice constant of the SiGe seed layer forces a tensile strain in the Si layer.

公开(公告)号：AU2003297627A1

公开(公告)日：2004-07-29

申请号：AU2003297627

申请日：2003-12-02

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  COHEN GUY M

IPC: H01L21/20 ,  H01L21/762

Abstract: A method for fabricating a strained Si layer on insulator, a structure of the strained Si layer on insulator, and electronic systems comprising such layers are disclosed. The method comprises the steps of forming epitaxially a relaxed SiGe layer on top of a Si layer on insulator; transforming the crystalline Si layer and the lower portion of the crystalline relaxed SiGe layer into an amorphous material state by ion implantation; and re-crystallizing the amorphous material from the crystalline top portion of the SiGe layer. The larger lattice constant of the SiGe seed layer forces a tensile strain in the Si layer.

公开(公告)号：AU2003295647A8

公开(公告)日：2004-06-15

申请号：AU2003295647

申请日：2003-11-19

Applicant: IBM

Inventor： GRILL ALFRED ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：AU2003295647A1

公开(公告)日：2004-06-15

申请号：AU2003295647

申请日：2003-11-19

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：MY127978A

公开(公告)日：2007-01-31

申请号：MYPI20022039

申请日：2002-06-03

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/84 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762

Abstract: A METHOD TO OBTAIN THIN (