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    A method of metallising an organic substrate so as to achieve improved adhesion of the metal.
    1.
    发明公开
    A method of metallising an organic substrate so as to achieve improved adhesion of the metal. 失效
    为了实现有机物体的金属化工艺在金属的粘附性。

    公开(公告)号：EP0206145A2

    公开(公告)日：1986-12-30

    申请号：EP86108025

    申请日：1986-06-12

    Applicant: IBM

    Inventor： CLABES JOACHIM GERHARD ,  HAHN PETER OTTO ,  HO PAUL SIU-CHUNG ,  LEFAKIS HARALAMBOS NMN ,  RUBLOFF GARY WAYNE

    IPC: B29C35/08 ,  B29C59/16 ,  C08J7/00 ,  C23C14/02 ,  C23C14/20 ,  C23C16/02

    CPC classification number: B29C59/16 ,  B29C2035/0872 ,  B29C2035/0877 ,  B29K2079/00 ,  C23C14/022 ,  C23C16/0263

    Abstract: Metal-organic substrate adhesion is improved by irradiating the substrate with low energy reactive ions, electrons, or photons to alter the chemical composition of a surface layer of the substrate to a depth of from about 1 nm to a few tens of nanometers. The energy of the incident reactive ions and electrons can be in the range of about 50 to 2000 eV, while the energy of the incident photons can be in the range of about 0.2 - 500 eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few orders of magnitude of one another. The low energy irradiation can be conducted at room temperature or elevated temperatures.

    Abstract translation: 金属 - 有机底物的粘附，通过照射与低能量的反应性的离子，电子或光子的衬底以从约1nm改变衬底的表面层的至的深度的化学成分到几十纳米米提高。 入射反应性离子和电子的能量可在约50至2000伏特的范围内，而入射光子的能量可在约0.2的范围内 - 500eV的。 基板的照射可以之前或期间金属沉积好发。 对于同时金属沉积/颗粒的照射下，金属原子的到达率与基板处理颗粒是彼此的大小的几个数量级之内。 低能量照射可以在室温下或升高的温度下进行。

    8.
    发明专利
    未知

    公开(公告)号：CH604370A5

    公开(公告)日：1978-09-15

    申请号：CH1212976

    申请日：1976-09-24

    Applicant: IBM

    Inventor： HOWARD JAMES KENT ,  HO PAUL SIU-CHUNG

    IPC: G11C11/14 ,  A01K1/01 ,  B41J2/335 ,  C22C21/00 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H01L21/90

    Abstract: A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200 DEG C. and 525 DEG C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

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