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    Method and apparatus for aligning electron beams
    1.
    发明授权
    Method and apparatus for aligning electron beams 失效
    电子束对准的方法和装置

    公开(公告)号：US3894271A

    公开(公告)日：1975-07-08

    申请号：US39336573

    申请日：1973-08-31

    Applicant: IBM

    Inventor： PFEIFFER HANS C ,  WOODARD OLLIE C

    IPC: H01J37/147 ,  H01J37/244 ,  H01J37/304 ,  H01L21/027 ,  H01J29/52 ,  B23K9/00

    CPC classification number: H01J37/1471 ,  H01J37/244 ,  H01J37/3045 ,  H01J2237/2446 ,  H01J2237/24507

    Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. During various times, e.g., the target stage is moving mechanically from one chip to the next one, the electron beam is blanked. The blanking aperture plate in the electron beam column is provided with a second sensing aperture. During a blanked phase, the condensor lens images the electron source on the sensing aperture of the blanking aperture plate. A sensing plate disposed beneath the blanking aperture monitors the beam current and provides a signal to an alignment servo. Error correction is carried out by moving the beam in small increments in two orthogonal directions until the sensing plate reads a maximum current.

    Abstract translation: 方形电子束从一个预定位置到另一个位置逐步形成在施加光束的半导体晶片的每个芯片上的期望图案。 在各种时期，例如目标阶段是从一个芯片机械移动到下一个芯片，电子束被消隐。 电子束列中的消隐孔板设置有第二感测孔。 在消隐阶段期间，聚光透镜将消隐孔板的感测孔上的电子源成像。 设置在消隐孔下方的检测板监测束电流并向对准伺服提供信号。 通过在两个正交方向上以小增量移动光束进行误差校正，直到感测板读取最大电流。

    ELECTRON BEAM PROJECTION DEVICE AND ITS OPERATION METHOD
    2.
    发明专利
    ELECTRON BEAM PROJECTION DEVICE AND ITS OPERATION METHOD 失效

    公开(公告)号：JPH11317353A

    公开(公告)日：1999-11-16

    申请号：JP2111099

    申请日：1999-01-29

    Applicant: IBM

    Inventor： GOLLADAY STEVEN D ,  PAUL F PETRICK ,  PFEIFFER HANS C ,  BERNAR STICKEL

    IPC: H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide with good reliability, high resolution and throughput an extremely a feature size smaller than 0.25 micron method by applying a couple of physical structure with respect to basic element of an electron beam lithography exposure system and range of the combination of operating parameters. SOLUTION: An electron beam projection system comprises an electron source 19 of high emissive power, an axis-variable lens 8, a curve beam trajectory 104, a reticule 204, and/or target movement in double scan mode. A target and/or a wafer 224 moves constantly in the direction orthogonal to beam scan. A high throughput is obtained in accordance with 0.1 μm feature size basic rule. Here, a column length longer than 400 mm, beam current of about 4-35 μA, beam energy of about 75-175 kV, sub-field size of 0.1-0.5 at a target in optical reduction factor of about 3:1-5:1, a numerical aperture which is larger than 2 milli radian (3-8 milli radian is preferred), and a scan length of about 20-55 mm, are used.

    PARTICLE BEAM SYSTEM INCLUDING DYNAMIC FOCUS COIL
    3.
    发明专利
    PARTICLE BEAM SYSTEM INCLUDING DYNAMIC FOCUS COIL 失效

    公开(公告)号：JP2000331634A

    公开(公告)日：2000-11-30

    申请号：JP2000109631

    申请日：2000-04-11

    Applicant: IBM

    Inventor： PFEIFFER HANS C ,  SENESI JOSEPH S ,  STURANS MARIS ANDRIS

    IPC: G03F7/20 ,  H01J37/141 ,  H01J37/21 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic lens having a dynamic focus coil. SOLUTION: A magnetic lens 60 having a lens opening for passing a particle beam includes a dynamic focus coil 22 placed outside the lens opening in magnetic pole pieces shaping a lens magnetic field. All magnetic flux lines from the dynamic focus coil form a closed circuit on the magnetic pole pieces of the lend, and the magnitude of the shape of the lens magnetic field between magnetic pole pieces is changed according to a current flowing through the dynamic focus coil. The shape of a magnetic field does not change, thereby changing a focal surface of the beam without moving laterally the beam with respect to a system axis 101.

    4.
    发明专利
    未知

    公开(公告)号：DE60039810D1

    公开(公告)日：2008-09-25

    申请号：DE60039810

    申请日：2000-03-18

    Applicant: IBM

    Inventor： PFEIFFER HANS C ,  SENESI JOSEPH S ,  STURANS MARIS ANDRIS

    IPC: G03F7/20 ,  H01J37/141 ,  H01J37/21 ,  H01L21/027

    Abstract: A magnetic lens having a lens bore for the passage of a particle beam includes a dynamic focus coil that is positioned outside the lens bore and within the pole piece that shapes the lens field, so that the magnetic flux lines from the dynamic focus coil all end on the pole pieces of the lens and the shape of the lens field between the pole pieces has its magnitude changed by the current passing through the dynamic focus coil, but the field shape is not changed, thus changing the focal plane of the beam without moving the beam transversely with respect to the system axis.

    Electron Beam Lithography System
    6.
    发明专利
    Electron Beam Lithography System 未知

    公开(公告)号：CA2131670A1

    公开(公告)日：1995-06-24

    申请号：CA2131670

    申请日：1994-09-08

    Applicant: IBM

    Inventor： PFEIFFER HANS C ,  STICKEL WERNER

    IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027

    Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

    METHOD AND APPARATUS FOR FORMING A VARIABLE SIZE ELECTRON BEAM
    7.
    发明专利
    METHOD AND APPARATUS FOR FORMING A VARIABLE SIZE ELECTRON BEAM 未知

    公开(公告)号：CA1166766A

    公开(公告)日：1984-05-01

    申请号：CA291957

    申请日：1977-11-29

    Applicant: IBM

    Inventor： PFEIFFER HANS C ,  RYAN PHILIP M ,  WEBER EDWARD V

    IPC: H01J37/147 ,  H01J37/09 ,  H01J37/30 ,  H01L21/027 ,  G21K1/08 ,  B23K15/00 ,  H01L21/42

    Abstract: In electron beam apparatus having a source of electrons and a target area toward which the electrons are directed, electron beam forming means are provided along the path from the source to the target. These forming means include a first beam shaping member having a first spot shaping aperture therein, a second beam shaping member having a second spot shaping aperture therein, and means focusing the image of the first aperture in the plane of the second aperture to thereby form a composite spot shape defined by the image of the first aperture and the second aperture. Further means are provided for focusing the image of the composite spot in the target area. Preferably, the apertures are square shaped. Thus, by varying the position of the superimposed image of the first aperture with respect to the second aperture, a wide variety of rectangular shaped composite spots with different dimensions is obtainable. This permits the exposure of rectilinear patterns, e.g., in photoresists of integrated circuit fabrication, by the electron beam with a minimum of exposure steps and substantially no exposure overlap. The result is greatly increased speed in the total exposure of such rectilinear areas to the electron beam as well as a minimum of the "blooming effects" produced by exposure overlap.

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