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    ANGLED FLYING LEAD WIRE BONDING PROCESS
    2.
    发明专利
    ANGLED FLYING LEAD WIRE BONDING PROCESS 失效

    公开(公告)号：JPH11317476A

    公开(公告)日：1999-11-16

    申请号：JP31677598

    申请日：1998-10-02

    Applicant: IBM

    Inventor： BEAMAN BRIAN S ,  KEITH EDWARD VOGEL ,  PAUL ALFRED LARO ,  SHIH DA-YUAN

    IPC: H01R43/02 ,  G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  H01L21/00 ,  H01L21/48 ,  H01L21/60 ,  H01L21/607 ,  H01L23/32

    Abstract: PROBLEM TO BE SOLVED: To provide a process for bonding wires to an electronic circuit device, attached one end of each wire onto a surface of the device and extend the other end in the direction opposite to the surface of the device. SOLUTION: This process includes a step for providing a surface having places where a plurality of wires can be bonded, a step to bond a wire 16 to each of the wire-bondable places by using a wire capillary tool 15, a step for controlling the position of the capillary tool 15 in relation go the surface, and a step for forming a wire in a predetermined form by moving the capillary tool 15 relative to the surface, when the capillary tool 15 is moved away from the surface after a wire 16 has been bonded to the wire-bondable place.

    PLATED PROBE STRUCTURE
    3.
    发明专利
    PLATED PROBE STRUCTURE 失效

    公开(公告)号：JPH11237406A

    公开(公告)日：1999-08-31

    申请号：JP31677698

    申请日：1998-10-02

    Applicant: IBM

    Inventor： BEAMAN BRIAN S ,  KEITH EDWARD VOGEL ,  PAUL ALFRED LARO ,  EUGENE JOHN O'SULLIVAN ,  SHIH DA-YUAN

    IPC: G01R31/26 ,  G01R1/06 ,  G01R1/067 ,  G01R1/073 ,  H01L21/66 ,  H05K3/24 ,  H05K3/32

    Abstract: PROBLEM TO BE SOLVED: To manufacture a high-density probe with rubbing operation that is controlled appropriately, by providing a plurality of plated bumps being mounted onto a substrate with specific wiring as a contact location to a plurality of solder balls. SOLUTION: A probe 30 for testing while being in contact with a solder ball connection 21 such as an integrated circuit 20 is mounted to a test substrate 11 such as ceramic and silicon wafers with fan-out wiring. The probe 30 is formed, for example, by first allowing a conductive plate base that is formed by sputtering Cu or the like to an adhesive layer where Cr or the like is sputtered to adhere to a surface 10 of the substrate 11. A specific pattern is formed on the plated base using photo resist or the like, and Cu or the like is electrically plated to the opening. Pd or the like covers a structure that is obtained by eliminating the resist and the plated base under it by such method as electroless plating, thus obtaining the probe 30 where the hardness and deterioration resistance of a contact region are improved.

    6.
    发明专利
    未知

    公开(公告)号：AT528796T

    公开(公告)日：2011-10-15

    申请号：AT08718206

    申请日：2008-03-26

    Applicant: IBM

    Inventor： BUCHWALTER STEPHEN ,  FURMAN BRUCE ,  GRUBER PETER ,  NAH JAE-WOONG ,  SHIH DA-YUAN

    IPC: H01L23/00

    Abstract: An electrical interconnect forming method. The electrical interconnect includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

    LEAD-FREE TIN-SILVER-COPPER ALLOY SOLDER COMPOSITION
    7.
    发明专利
    LEAD-FREE TIN-SILVER-COPPER ALLOY SOLDER COMPOSITION 未知

    公开(公告)号：MY128248A

    公开(公告)日：2007-01-31

    申请号：MYPI20030490

    申请日：2003-02-13

    Applicant: IBM

    Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

    IPC: B23K1/00 ,  B23K101/42 ,  B23K35/26 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34

    Abstract: A SOLDER COMPOSITION AND ASSOCIATED METHOD OF FORMATION. THE SOLDER COMPOSITION COMPRISES A SUBSTANTIALLY LEAD-FREE ALLOY THAT INCLUDES TIN (Sn), SILVER (Ag), AND COPPER. THE TIN HAS A WEIGHT PERCENT CONCENTRATION IN THE ALLOY OF AT LEAST ABOUT 90% THE SILVER HAS A WEIGHT PERCENT CONCENTRATION X IN THE ALLOY. X IS SUFFICIENTLY SMALL THAT FORMATION OF Ag3Sn PLATES IS SUBSTANTIALLY SUPPRESSED WHEN THE ALLOY INA LIQUEFIED STATE IS BEING SOLIDIFIED BY BEING COOLED TO A LOWER TEMPERATURE AT WHICH THE SOLID Sn PHASE IS NUCLEATED. THIS LOWER TEMPERATURE CORRESPONDS TO AN UNDERCOOLING oT RELATIVE TO THE EUTECTIC MELTING TEMPERATURE OF THE ALLOY. ALTERNATIVELY, X MAY BE ABOUT 4.0% OR LESS , WHEREIN THE LIQUIFIED ALLOY IS COOLED AT A COOLING RATE THAT IS HIGH ENOUGH TO SUBSTANTIALLY SUPPRESS Ag3Sn PLATE FORMATION IN THE ALLOY. THE COPPER HAS A WEIGHT PERCENT CONCENTRATION IN THE ALLOY NOT EXCEEDING ABOUT 1.5%.(FIG 16)

    LEAD-FREE TIN-SILVER-COPPER ALLOY SOLDER COMPOSITION
    9.
    发明专利
    LEAD-FREE TIN-SILVER-COPPER ALLOY SOLDER COMPOSITION 未知

    公开(公告)号：CA2475491A1

    公开(公告)日：2003-08-28

    申请号：CA2475491

    申请日：2003-02-11

    Applicant: IBM

    Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

    IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  H01L23/488

    Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn) , silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90 %. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates (57, 58 ) is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phas e is nucleated. This lower temperature corresponds to an undercooling .delta.T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0 % or less, wherein the liquefied alloy is cooled at a cooli ng rate that is high enough to substantially suppress Ag3Sn plate (57, 58) formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5 %.

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