公开(公告)号：DE69402232T2

公开(公告)日：1997-09-18

申请号：DE69402232

申请日：1994-01-14

Applicant: IBM

Inventor： BUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  GELORME JEFFREY D ,  WOOD ROBERT L ,  LINEHAN LEO L ,  SOORIYAKUMARAN RATNAM ,  TAI TSONG-LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: Improved chemically amplified negative tone microlithographic resist compositions and methods for the use thereof are disclosed. The compositions comprise, in admixture, a crosslinking agent, a polymeric binder, and a compound that generates acid upon exposure of the resist composition to imaging radiation. The invention is particularly related to compositions having a crosslinking agent which does not plasticize the polymeric binder or alternatively does not reduce the glass transition temperature thereof. This minimizes the diffusion of the acid component from exposed regions of the resist to unexposed regions, and helps maintain relief image dimensional control.

公开(公告)号：CA2090039A1

公开(公告)日：1992-03-19

申请号：CA2090039

申请日：1990-12-21

Applicant: IBM

Inventor： CONLEY WILLARD E ,  KWONG RANEE W ,  KVITEK RICHARD J ,  LANG ROBERT N ,  LYONS CHRISTOPHER F ,  MIURA STEVE S ,  MOREAU WAYNE M ,  SACHDEV HARBANS S ,  WOOD ROBERT L

IPC: G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: 2090039 9205474 PCTABS00011 A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

公开(公告)号：DE69214035T2

公开(公告)日：1997-04-10

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：CA2001384A1

公开(公告)日：1990-04-28

申请号：CA2001384

申请日：1989-10-24

Applicant: IBM

Inventor： MERRITT DAVID P ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: C09D11/10 ,  C08F8/14 ,  G03F7/039 ,  H01L21/027

Abstract: Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendant to the polymer backbone, a portion of which groups are substituted with acid labile groups.

公开(公告)号：CA1155326A

公开(公告)日：1983-10-18

申请号：CA385499

申请日：1981-09-09

Applicant: IBM

Inventor： MOYER WILLIAM A ,  WOOD ROBERT L

IPC: G03C1/72 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

Abstract: FI 9-80-019 Process for Forming a Patterned Resist Mask The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.

公开(公告)号：DE69402232D1

公开(公告)日：1997-04-30

申请号：DE69402232

申请日：1994-01-14

Applicant: IBM

Inventor： BUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  GELORME JEFFREY D ,  WOOD ROBERT L ,  LINEHAN LEO L ,  SOORIYAKUMARAN RATNAM ,  TAI TSONG-LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: Improved chemically amplified negative tone microlithographic resist compositions and methods for the use thereof are disclosed. The compositions comprise, in admixture, a crosslinking agent, a polymeric binder, and a compound that generates acid upon exposure of the resist composition to imaging radiation. The invention is particularly related to compositions having a crosslinking agent which does not plasticize the polymeric binder or alternatively does not reduce the glass transition temperature thereof. This minimizes the diffusion of the acid component from exposed regions of the resist to unexposed regions, and helps maintain relief image dimensional control.

公开(公告)号：DE69214035D1

公开(公告)日：1996-10-31

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：SG43691A1

公开(公告)日：1997-11-14

申请号：SG1995002204

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONDS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.