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公开(公告)号:JP2006210928A
公开(公告)日:2006-08-10
申请号:JP2006019045
申请日:2006-01-27
Applicant: Infineon Technologies Ag , インフィネオン テクノロジーズ アクチエンゲゼルシャフト
Inventor: MOUKARA MOLELA , PFORR RAINER , MUELDERS THOMAS , HENNIG MARIO , ZEILER KARSTEN
IPC: H01L21/027 , G03F1/00 , G03F7/20
CPC classification number: G03F7/70283 , G03F1/30 , G03F1/32 , G03F7/701 , G03F7/70108 , G03F7/70125
Abstract: PROBLEM TO BE SOLVED: To provide a structure, capable of simultaneously projecting a periodic line interval plane diffraction grating of a memory cell region and a peripheral structure pattern that is formed intricately. SOLUTION: The quality of image formation, when an image is simultaneously transmitted from a line interval plane diffraction grating and a peripheral structure including MUX row, is improved by using a quadrupole illumination. Four poles 14a to 14d of this quadrupole illumination extend in the longitudinal direction, and the axis 112 of the pole in the longitudinal direction is located vertical, with respect to the row direction of the grating row of a mask. Thus, the contrast of a structure image formation of the line interval planar diffraction grating, MEEF, and a process window can be improved. Meanwhile, the geometrical accuracy of the peripheral structure (particularly, MUX row) is stabilized by an illumination pupil 18, extending over the entire wide depth range of focus. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题:提供能够同时投影存储单元区域的周期性行间隔平面衍射光栅和复杂形成的周边结构图案的结构。 解决方案:通过使用四极照明来改善图像从线间隔平面衍射光栅同时传输的图像形成和包括MUX行的外围结构的质量。 该四极照明的四极14a至14d在纵向方向上延伸,并且杆的纵向方向的轴线112相对于掩模的光栅行的行方向位于垂直方向。 因此,可以提高线间隔平面衍射光栅的结构图像形成的对比度,MEEF和处理窗口。 同时,周边结构(特别是MUX行)的几何精度通过在整个宽的深度聚焦范围上延伸的照明光瞳18而稳定。 版权所有(C)2006,JPO&NCIPI
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公开(公告)号:DE102006013459A1
公开(公告)日:2007-09-27
申请号:DE102006013459
申请日:2006-03-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PFORR RAINER , TSCHISCHGALE JOERG , KUECHLER BERND , MUELDERS THOMAS
IPC: G03F7/20
Abstract: The arrangement has a lighting device (4) for producing radiations (1000), and a photo-mask (2) with a set of structural units (3), where the radiations transmit the structural units to a photo-resist (21) arranged on a substrate (5). An optical unit (6) has a surface (7), and causes a local variation of transmission rate of the radiations depending on an angle of incidence of the radiations with respect to the surface. The optical unit is arranged between the photo-mask and the substrate. An independent claim is also included for a method for transmitting structural units to a substrate.
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公开(公告)号:DE102005003905B4
公开(公告)日:2007-04-12
申请号:DE102005003905
申请日:2005-01-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PFORR RAINER , MOUKARA MOLELA , MUELDERS THOMAS , HENNIG MARIO , ZEILER KARSTEN
Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.
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公开(公告)号:DE102004031720A1
公开(公告)日:2006-01-26
申请号:DE102004031720
申请日:2004-06-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MUELDERS THOMAS
IPC: G03F7/20
Abstract: A method of determining optimal light distribution in photolithographic imaging of mask structure on a semiconductor wafer comprises forming and storing pixel serial images and evaluating by a given distribution. Values are combined with an optimizing algorithm to give an optimal distribution for a given mask structure. Independent claims are also included for the following: (A) an optical image obtained as above; (B) an illumination screen;and (C) a production process for the above.
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公开(公告)号:DE102005005102B3
公开(公告)日:2006-07-20
申请号:DE102005005102
申请日:2005-02-04
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MARSCHNER THOMAS , MUELDERS THOMAS , NOELSCHER CHRISTOPH
IPC: G03F1/00
Abstract: The mask has a radiation permeable substrate with a main structure (21) and auxiliary structures (22) parallel to each other. The main and auxiliary structures are made from partial radiation impermeable material. The auxiliary structures are arranged in two rows, where a minimum distance exists between the auxiliary structures in each row. The distance between the structures deviates by a maximum of 10 percent from an average value.
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公开(公告)号:DE102005003905A1
公开(公告)日:2006-10-12
申请号:DE102005003905
申请日:2005-01-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PFORR RAINER , MOUKARA MOLELA , MUELDERS THOMAS , HENNIG MARIO , ZEILER KARSTEN
Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.
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公开(公告)号:DE10361875A1
公开(公告)日:2005-07-21
申请号:DE10361875
申请日:2003-12-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PFORR RAINER , MUELDERS THOMAS , CRELL CHRISTIAN , BAUCH LOTHAR , ZIEBOLD RALF , MOELLER HOLGER , GRAESER ANNETT
Abstract: A lithography mask comprises a structure for transferring a layout onto a substrate. A blind macrostructure (1) is used to suppress scattered light, and is located at a bright region of the structure. The macrostructure is partially transparent and does not print on the substrate or form a resist structure.
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公开(公告)号:DE102005017516B3
公开(公告)日:2007-01-25
申请号:DE102005017516
申请日:2005-04-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: RENNER KERSTIN , NOELSCHER CHISTOPH , MUELDERS THOMAS
IPC: G03F7/20
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公开(公告)号:DE102004060223A1
公开(公告)日:2006-07-06
申请号:DE102004060223
申请日:2004-12-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MUELDERS THOMAS , HENKE WOLFGANG
IPC: G03F7/40
Abstract: The method involves post baking process which is followed on lithographic exposure whereby lower parts of photoresist volume in cells (1) and setting up of a chemical master equation (2) for reaction diffusion system which express stochastic kinetics of chemical reactions in the cells and diffusion procedures between the cells of photoresist volume in post baking process. Dismantling of chemical master equation (3) on the basis of a Gillespie algorithm for a given post baking time, in order to determine the distribution of the component in the photoresist volume after procedure of given post-baking time. An independent claim is also include for method of determining edge profile of volume of photoresist.
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