公开(公告)号：WO0249805A8

公开(公告)日：2004-03-04

申请号：PCT/US0150625

申请日：2001-12-21

Applicant: LAM RES CORP ,  KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

Inventor： KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

IPC: B24B21/10 ,  B24B21/04 ,  B24B37/12 ,  B24B49/10 ,  B24B49/16 ,  B24D9/08 ,  H01L21/304 ,  B24B37/04

CPC classification number: B24B37/12 ,  B24B21/04 ,  B24B49/10 ,  B24B49/16 ,  B24D9/08

Abstract: An invention is disclosed for impoved performance in a CMP process using a pressurized membrane (312) and piezoelectric elements (702) as replacements for a platen (308) air bearing. In one embodiment, a platen form impoving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders (314) disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process. In a further embodiment, piezoeletric elements are disposeed above the platen, which exert force on the polishing belt (310) during a CMP process, resulting in improved zonal control during the CMP process.

Abstract translation: 公开了一种使用加压膜（312）和压电元件（702）作为压板（308）空气轴承的替代物的CMP工艺中的突出性能的发明。 在一个实施例中，公开了在CMP应用中具有优势的压板形式。 压盘包括设置在压板上方的膜和设置在膜下方的多个环形囊（314），其中环形囊可以在膜上施加力。 以这种方式，在CMP过程中提供了区域控制。 在另一个实施例中，压电元件在压板之上被放置，其在CMP工艺期间在抛光带（310）上施加力，导致在CMP工艺期间改进的区域控制。

公开(公告)号：WO2008027216A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2007038030A2

公开(公告)日：2007-04-05

申请号：PCT/US2006036139

申请日：2006-09-15

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

IPC: H01L21/302 ,  G03C1/00 ,  H01L21/461

CPC classification number: H01L21/02087 ,  B08B7/0035

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract translation: 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当空腔中存在等离子体时，第一电线网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：WO2004088746A3

公开(公告)日：2005-02-17

申请号：PCT/US2004008945

申请日：2004-03-23

Applicant: LAM RES CORP ,  REDEKER FRED C ,  BOYD JOHN

Inventor： REDEKER FRED C ,  BOYD JOHN

IPC: H01L21/288 ,  H01L21/768

CPC classification number: H01L21/288 ,  H01L21/7684

Abstract: A planarized conductive material is formed over a substrate including narrow (108) and wide (106) features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer (600) of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer (700) of the conductive material within recesses in the first layer. Polishing with a flexible material (1200) can reduce a thickness of the first layer above the substrate while delivering a solution to the recesses to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.

Abstract translation: 在包括窄（108）和宽（106）特征的衬底上形成平坦化的导电材料。 导电材料通过一系列沉积工艺形成。 第一沉积工艺形成导电材料的第一层（600），其填充窄特征并且至少部分地填充宽的特征。 第二沉积工艺在第一层的凹槽内形成导电材料的第二层（700）。 用柔性材料（1200）抛光可以减少衬底上方的第一层的厚度，同时将溶液递送到凹部以在其中形成第二层。 柔性材料可以是连接到填充有溶液的可加压储存器的多孔膜。 柔性材料也可以是用溶液润湿的多孔体材料。

公开(公告)号：JP2010236090A

公开(公告)日：2010-10-21

申请号：JP2010071654

申请日：2010-03-26

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： RAVKIN MIKE ,  BOYD JOHN ,  DORDI YEZDI N ,  REDEKER FRED C ,  DE LARIOS JOHN M

IPC: C25D5/04 ,  C25D5/02 ,  C25D5/22 ,  C25D7/12 ,  C25D17/12 ,  C25D21/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205

CPC classification number: C25D17/10 ,  C25D5/026 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and technique for more effectively depositing a thin film by using localized deposition and permitting localized planarization, in particular, relating to the deposition and planarization of a semiconductor wafer.
SOLUTION: An electroplating apparatus 100 for depositing a metal layer 108 on the surface of the wafer 104 is provided. In one embodiment, a proximity head 102 which can be charged as an anode is placed in close proximity to the surface of the wafer 104. A plating fluid 116 is provided between the wafer 104 and the proximity head 102 to form a localized metal plating part 108.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于通过使用局部沉积更有效地沉积薄膜并允许局部平坦化的装置和技术，特别是涉及半导体晶片的沉积和平坦化。 解决方案：提供一种用于在晶片104的表面上沉积金属层108的电镀设备100。 在一个实施例中，可以充电为阳极的接近头部102被放置成紧邻晶片104的表面。电镀液116设置在晶片104和接近头部102之间，以形成局部金属电镀部分 108.版权所有（C）2011，JPO＆INPIT

公开(公告)号：WO2008027386A3

公开(公告)日：2008-08-21

申请号：PCT/US2007018924

申请日：2007-08-28

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67184 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67745

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

Abstract translation: 一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

公开(公告)号：WO2008027205A3

公开(公告)日：2008-04-24

申请号：PCT/US2007018212

申请日：2007-08-15

Applicant: LAM RES CORP ,  NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

Inventor： NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

IPC: C23F11/00 ,  H01L21/302 ,  H01L21/312

CPC classification number: C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

Abstract: The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

Abstract translation: 这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。 电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。 功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。 官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。 该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。

公开(公告)号：WO2004071938A3

公开(公告)日：2004-12-29

申请号：PCT/US0341226

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT ,  ANDERSON THOMAS W

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

CPC classification number: B08B3/12 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  H01L21/67057 ,  H01L21/67253

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

Abstract translation: 清洁衬底（202）的系统和方法包括包括换能器（210）和衬底（202）的兆声波室（206）。 换能器（210）朝向衬底（202）定向。 可变距离d分离换能器（210）和基底（202）。 系统（200）还包括动态可调的RF发生器（212），其具有耦合到换能器的输出。 动态可调RF发生器（212）可以通过振荡器输出（306）电压和RF发生器输出电压的相位的相位比较来控制。 也可以通过监视输出信号的峰值电压并控制RF发生器将峰值电压保持在预定的电压范围内来控制可动态调节的RF发生器（212）。 动态调节的RF发生器（212）也可以通过动态地控制可变直流电源电压来控制。

公开(公告)号：WO2004030052A2

公开(公告)日：2004-04-08

申请号：PCT/US0331136

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/00

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

Abstract translation: 提供了衬底制备系统的许多实施例之一，其包括具有头表面的头部，其中头部表面靠近衬底的表面。 该系统还包括用于通过头部将第一流体输送至基底表面的第一导管以及用于通过头部将第二流体输送至基底表面的第二导管，其中第二流体不同于第一流体 流体。 该系统还包括第三管道，用于从第一管道，第二管道和第三管道基本同时起作用的衬底表面去除第一流体和第二流体中的每一个。 在替代实施例中，提供了一种用于处理基板的方法，其包括在基板的表面上产生流体弯月面并且将声能施加到流体弯月面。 该方法还包括将流体弯月面移动到衬底的表面上以处理衬底的表面。

公开(公告)号：WO2008027216A9

公开(公告)日：2008-05-22

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

Abstract translation: 这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统 铜互连的界面粘合。 提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的系统。