公开(公告)号：EP1762925A1

公开(公告)日：2007-03-14

申请号：EP05425633.4

申请日：2005-09-09

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Faralli, Dino

IPC: G06F3/033 ,  G01L5/22

CPC classification number: G01L5/223 ,  G06F3/0338 ,  Y10T29/49105 ,  Y10T29/49169

Abstract: In an input device (30), a control element (32) is operated by a user; a pressure sensor (1) is mechanically coupled to the control element (32) and is provided with a monolithic body (2) of semiconductor material housing a first sensitive element (4), which detects an actuation of the control element (32); a supporting element (34) is connected to the pressure sensor (1); and connection elements (38) electrically connect the monolithic body (2) to the supporting element (34) without interposition of a package. In particular, the monolithic body (2) has electrical-contact areas (6) carried by one main surface (2a) thereof, and the printed circuit board (34) has conductive regions (37) carried by a main face (34) thereof; the connection elements (38) are conductive bumps and electrically connect the electrical-contact areas (6) to the conductive regions (37).

Abstract translation: 在输入装置（30），控制元件（32）是由用户操作; 的压力传感器（1）机械地联接到控制元件（32），并设置有一整体式主体半导体材料壳体（2）具有第一敏感元件（4），其在所述控制元件的致动（32）检测; 的支撑元件（34）被连接到所述压力传感器（1）; 和连接部件（38），其电未经封装的插入单块体（2）连接到所述支撑元件（34）。 特别地，所述整体式主体（2）具有电接触区域（6）由一个主表面（2a）中，以及它们的印刷电路板（34）中进行具有由主面（34）中进行的导电区域（37）其 ; 连接元件（38）是导电凸块和电的电接触区域（6）连接到导电区域（37）。

公开(公告)号：EP2644563A3

公开(公告)日：2013-12-04

申请号：EP13169983.7

申请日：2008-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Cortese, Mario Francesco

IPC: B81B7/00 ,  G01L19/00 ,  G01L13/02 ,  G01D11/24

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises:
- a substrate (2) provided with at least one passing opening (5),
- a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at lesat one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11 a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises
- a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).

公开(公告)号：EP1764597A1

公开(公告)日：2007-03-21

申请号：EP05425648.2

申请日：2005-09-16

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Petroni, Simona ,  Pomarico, Angela ,  Baldo, Lorenzo

IPC: G01L9/00 ,  G01L11/04

CPC classification number: G01L9/0025

Abstract: Surface acoustic wave pressure sensor (1) comprising:
- a substrate (3) and at least one flexible membrane (5), suspended over a cavity (4) defined in the thickness of the substrate, the membrane (5) being elastically deformable by a pressure (P) applied by a fluid (5) and being defined between a first surface (5a) facing the cavity (4) and a second opposite surface (5b);
- a SAW device (6, 7 8) comprising a layer of piezoelectric material (6) arranged on said second surface (5b) of the membrane, the SAW device further comprising at least one SAW electro-acoustic transducer (7, 8) formed on one free surface of said piezoelectric layer (6).
The piezoelectric layer (6) is formed by deposition of piezoelectric material on the membrane (5) and the substrate (3) is integrated in a wafer of semiconductor material (2), the membrane being a layer of said wafer (2) suspended over said cavity (4).

Abstract translation: 表面声波压力传感器（1）包括： - 衬底（3）和至少一个柔性膜（5），其悬挂在限定在所述衬底的厚度上的空腔（4）上，所述膜（5）可通过 由流体（5）施加并且限定在面向空腔（4）的第一表面（5a）和第二相对表面（5b）之间的压力（P）; - SAW器件（6,78），其包括布置在所述膜的所述第二表面（5b）上的压电材料层（6），所述SAW器件还包括形成有至少一个SAW电声换能器（7,8） 在所述压电层（6）的一个自由表面上。 压电层（6）通过在膜（5）上沉积压电材料而形成，并且衬底（3）集成在半导体材料（2）的晶片中，该膜是所述晶片（2）的一个层 所述腔（4）。

公开(公告)号：EP2333572A1

公开(公告)日：2011-06-15

申请号：EP10194490.8

申请日：2010-12-10

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Procopio, Francesco ,  Zerbini, Sarah

IPC: G01R33/028 ,  G01R33/038

CPC classification number: G01R33/0286 ,  G01R33/0005 ,  G01R33/028 ,  G01R33/038

Abstract: Two suspended masses (1, 3) are configured so as to be flowed by respective currents (I) flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes (18b). Mobile sensing electrodes (11) are carried by the first suspended mass (1) and are capacitively coupled to respective fixed sensing electrodes (12). The first suspended mass (1) is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction (X). The second suspended mass (3) is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction (Y), and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction (Z).

Abstract translation: 两个悬挂质量（1,3）被构造成以相互横向在磁力计平面中流动的相应电流（I）流动并且电容耦合到下电极（18b）。 移动感测电极（11）由第一悬挂质量（1）承载，并且电容耦合到相应的固定感测电极（12）。 第一悬挂质量块（1）被配置成在存在具有在第一水平方向（X）上的分量的磁场的情况下在横向于平面的方向上是可移动的。 第二悬挂质量体（3）被构造为在存在具有在第二水平方向（Y）上的分量的磁场的情况下在横向于平面的方向上是可移动的，并且第一悬浮质量体被配置为 在具有垂直方向（Z）的分量的磁场的存在下，在平行于平面的方向上移动并横向于在第一悬置质量块中流动的电流。

公开(公告)号：EP2096448A2

公开(公告)日：2009-09-02

申请号：EP09161586.4

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor pressure-monitoring device (30) is disclosed, envisaging: providing a wafer (31) of semiconductor material; providing, in a first region (34a) of the wafer (31) a first buried cavity (22) and a first membrane (23), suspended over, and closing at the top, the first buried cavity (22); providing, in a second region (34b) of the wafer (31), a second buried cavity (40) and a second membrane (41), suspended over, and closing at the top, the second buried cavity (40); coupling an inertial mass (25) in a rigid way to the first membrane (23), by forming the inertial mass (25) on top of a surface of the first membrane (23) opposite to the first buried cavity (22); providing, in the first membrane (23), first piezoresistive transduction elements (24) sensitive to strains of the first membrane (23) due to movements of the inertial mass (25) in response to a sensed acceleration and generating corresponding electrical signals, so as to provide an acceleration sensor (35); and providing, in the second membrane (41), second piezoresistive transduction elements (42) sensitive to strains of the second membrane (41) in response to a sensed pressure and generating corresponding electrical signals, so as to provide a pressure sensor (36) integrated with the acceleration sensor (35) in the wafer (31). A semiconductor pressure-monitoring device (30) is also disclosed, made with the above manufacturing process.

Abstract translation: 半导体组合的加速度计和压力监控装置的制造过程（30）游离缺失盘，着的正视：提供半导体材料的晶片（31）; 提供，在晶片的第一区域（34A）（31）的第一掩埋空腔（22），并悬浮在，并且在顶部闭合的第一膜（23），所述第一掩埋空腔（22）; 提供，在第二区域（34B）的晶片（31），第二掩埋空腔（40），并悬浮在，并且在顶部闭合第二膜（41），所述第二掩埋空腔（40）; 耦合到在刚性方式惯性质量（25）到所述第一膜（23）通过在第一膜的表面的顶部上形成惯性质量（25）（23）相对于该第一掩埋空腔（22）; 提供，在所述第一膜（23），第一压阻转换元件（24）到所述第一膜（23）的敏感的菌株由于响应于感测到的加速度的惯性质量（25）的运动和产生相应的电信号，从而 以提供到加速度传感器（35）; 和提供，在第二膜（41），第二压阻转换元件（42），以响应于感测到的压力和产生所述第二膜（41）的菌株相应的电信号，以提供一个压力传感器敏感（36） 与在晶片（31）加速度传感器（35）集成在一起。 一种组合半导体加速度计和压力监控装置（30）是这样游离缺失盘，与上述制造方法制得。

公开(公告)号：EP1312580B1

公开(公告)日：2007-01-24

申请号：EP01830712.4

申请日：2001-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： Sassolini, Simone ,  Del Sarto, Marco ,  Frezza, Giovanni ,  Baldo, Lorenzo

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00333

公开(公告)号：EP1684079A9

公开(公告)日：2006-10-25

申请号：EP05425028.7

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.

公开(公告)号：EP1719993A1

公开(公告)日：2006-11-08

申请号：EP05425306.7

申请日：2005-05-06

Applicant: STMicroelectronics S.r.l.

Inventor： Villa, Flavio Francesco ,  Corona, Pietro ,  Barlocchi, Gabriele ,  Baldo, Lorenzo

IPC: G01L7/08 ,  G01L9/00

CPC classification number: G01L9/0045 ,  G01L13/025

Abstract: In a process for manufacturing an integrated differential pressure sensor, the steps of: forming, in a monolithic body (30) of semiconductor material having a first face (30a) and a second face (30b), a cavity (36) extending at a distance from the first face (30a) and delimiting therewith a flexible membrane (37); forming an access passage (42; 42, 44), in fluid communication with the cavity (36); and forming, in the flexible membrane (37), at least one transduction element (38, 72) configured so as to convert a deformation of the flexible membrane (37) into electrical signals. The cavity (36) is formed in a position set at a distance from the second face (30b) and delimits, together with the second face (30b), a portion of the monolithic body (30). In order to form the access passage (42; 42, 44), the monolithic body (30) is etched so as to form an access trench (42) extending through it.

Abstract translation: 在制造集成的差压传感器的过程中，包括以下步骤：在具有第一面（30a）和第二面（30b）的半导体材料的整体体（30）中形成在 距离第一面（30a）的距离并且用其限定柔性膜（37）; 形成与所述空腔（36）流体连通的进入通道（42; 42,44）。 以及在所述柔性膜（37）中形成至少一个构造成将所述柔性膜（37）的变形转换成电信号的换能元件（38,72）。 空腔（36）形成在与第二面（30b）相距一定距离的位置，与第二面（30b）一起界定整体式本体（30）的一部分。 为了形成进入通道（42; 42,44），对整体式主体（30）进行蚀刻，以形成延伸穿过其的通道沟槽（42）。

公开(公告)号：EP1684079A1

公开(公告)日：2006-07-26

申请号：EP05425028.7

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.

Abstract translation: 半导体压阻加速度计（35）的制造工艺包括以下步骤：提供半导体材料的晶片（11）; 在所述晶片（11）上方的空腔（22）上提供膜（23）; 将惯性质量块（25）刚性耦合到膜（23）上; 以及在所述晶片（11）中提供对所述膜（23）的应变敏感的压阻转导元件（24）并产生相应的电信号。 通过在与空腔（22）相对的膜（23）的表面的顶部上形成惯性质量（25）来进行联接的步骤。 加速度计（35）有利地用于监测车辆的轮胎的压力（30）的装置中。 空腔可以形成为掩埋腔。 质量可以通过丝网印刷金属浆料形成。

公开(公告)号：EP1624284A1

公开(公告)日：2006-02-08

申请号：EP04425573.5

申请日：2004-07-29

Applicant: STMicroelectronics S.r.l.

Inventor： Sassolini, Simone ,  del Sarto, Marco ,  Baldo, Lorenzo ,  Marchi, Mauro

IPC: G01C19/56

CPC classification number: G01C19/5755 ,  G01C19/5769

Abstract: The semiconductor inertial sensor (30) is formed by a rotor element (38) and a stator element (39) electrostatically coupled together. The rotor element (38) is formed by a suspended mass (40) and by a plurality of mobile electrodes (41) extending from the suspended mass (40). The stator element (39) is formed by a plurality of fixed electrodes (42) facing respective mobile electrodes (41). The suspended mass (40) is supported by elastic suspension elements (45). The suspended mass (40) has a first, larger, thickness (t1 + t2), and the elastic suspension elements (45) have a second thickness (t1), smaller than the first thickness.

Abstract translation: 半导体惯性传感器（30）由静电耦合在一起的转子元件（38）和定子元件（39）形成。 转子元件（38）由悬挂质量块（40）和从悬浮块（40）延伸的多个可移动电极（41）形成。 定子元件（39）由面对各自的可动电极（41）的多个固定电极（42）形成。 悬挂质量（40）由弹性悬挂元件（45）支撑。 悬挂质量（40）具有第一，较大的厚度（t1 + t2），并且弹性悬挂元件（45）具有小于第一厚度的第二厚度（t1）。