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公开(公告)号：KR1020020046817A
公开(公告)日：2002-06-21
申请号：KR1020000077156
申请日：2000-12-15
Applicant: 한국과학기술연구원
IPC: H02N2/00
CPC classification number: H02N2/163 , H02N2/0065
Abstract: PURPOSE: A circular ring-type piezoelectric ultrasonic wave motor is provided to increase a rotary power of a rotor with maintaining a variable of a motor by applying an electric field to a piezoelectric ceramics and generating a potential in a frequency of ultrasonic wave band. CONSTITUTION: A piezoelectric ceramics(2) is adhered to a lower part of a circular ring-type resonator(1). A protrusion unit(5) which is formed at an upper part of the circular ring-type resonator(1) is in connection with an elastic friction member(4) and transmits a rotary power to a rotor(3). The weight of the circular ring-type resonator(1) is not more than the five times of the total weight of the protrusion unit(5).
Abstract translation: 目的：提供一种圆环型压电超声波电动机，通过向压电陶瓷施加电场并产生超声波频带的电位，通过保持电动机的变量来增加转子的旋转功率。 构成：压电陶瓷（2）粘附到圆环型谐振器（1）的下部。 形成在圆环型谐振器（1）的上部的突出单元（5）与弹性摩擦构件（4）连接并将旋转动力传递给转子（3）。 圆环型谐振器（1）的重量不大于突起单元（5）的总重量的5倍。
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公开(公告)号：KR100307807B1
公开(公告)日：2001-11-30
申请号：KR1019980054847
申请日：1998-12-14
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: 본 발명은 이온빔을 이용하여 친수성으로 표면개질된 고분자 배양접시 및 그 표면 개질방법에 관한 것으로, 고분자 배양접시 표면으로, 반응성 기체를 유입시키면서 2000 eV 이하의 에너지를 가진 이온빔을 조사시킴으로써 상기 이온빔으로 고분자 배양접시의 표면을 활성화시키면서 활성화된 고분자 배양접시 표면과 상기 반응성 기체를 반응시켜 그 표면에 친수성기를 형성시키는 고분자 배양접시의 표면개질방법과 그에 의해 표면개질된 고분자 배양접시를 제공한다.
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公开(公告)号：KR1020010104157A
公开(公告)日：2001-11-24
申请号：KR1020000025622
申请日：2000-05-13
Applicant: 한국과학기술연구원
IPC: C04B41/81 , H01L41/187
CPC classification number: C23C18/06 , C23C18/1208 , C23C18/1254
Abstract: 본 발명은 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법에 관한 것으로, 유기 바인더 및 용제로 구성된 비이클을 제조하고, 상기 비이클에 세라믹 분말을 분산시켜 페이스트를 제조하고, 상기 페이스트로 스크린 프린팅법에 의해 일정한 두께의 후막을 프린팅하고, 프린팅된 후막을 건조한 후 유기바인더를 제거하고, 프린팅된 후막 표면에 졸 또는 졸과 유사한 용액을 도포하여 상기 후막으로 스며들도록 함침시키고, 상기 후막을 스피닝하여 여분의 졸 또는 졸과 유사한 용액을 제거하고, 상기 후막을 건조하여 중간 열처리를 하고, 상기 후막을 소결하는 단계를 포함하여 이루어지는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법을 제공한다. 본 발명에 의하면 패터닝 공정이 필요없이 기존의 스크린 프린팅 방법을 이용하여 저온에서 보다 치밀한 세라믹 후막을 원하는 패턴 크기로 제조하는 것이 가능하다. 따라서 저온소결 및 후막의 치밀화로 인하여 압전 소자및 초전 소자 등의 마이크로 디바이스 제조에 유용하게 이용될 수 있다.
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公开(公告)号：KR100303610B1
公开(公告)日：2001-09-24
申请号：KR1019990039969
申请日：1999-09-17
Applicant: 한국과학기술연구원
IPC: C04B40/00
Abstract: 본발명은물을용매로사용하여테이프캐스팅법으로후막을제조한후 건조되지않은상태의후막을유기용매를이용하여세척함으로써물을유기용매로치환하는세라믹스후막의제조방법에관한것이다. 이방법에사용되는유기용매는물과쉽게혼합되고흡습성이강하고후막에포함된고분자와반응하지않는용매가바람직하며, 대표적인것으로는에탄올, 메탄올, 및아세톤등이있다. 이와같은용매세척법을이용함으로써세라믹스후막공정의건조속도가향상되고, 후막이갈라지는현상이현저히줄어들기때문에, 산업현장에서다양한테이프캐스팅법이물을사용하는수계로전환가능하게될 것이며, 이에따라유기용매에의한환경문제가해결되고작업환경개선에도움을줄 것이다.
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公开(公告)号：KR1020010076504A
公开(公告)日：2001-08-16
申请号：KR1020000003690
申请日：2000-01-26
Applicant: 한국과학기술연구원
CPC classification number: C23C14/34 , C23C14/0047 , C23C14/086 , C30B23/02 , C30B29/16
Abstract: PURPOSE: A method for manufacturing ZnO film for an infrared light receiving and emitting device operated at normal temperature and an apparatus therefor are provided to replace GaN by manufacturing ZnO film at lower costs. CONSTITUTION: The method for manufacturing ZnO film for the infrared light receiving and emitting device operated at normal temperature includes following steps. At first, a gas including Ar and O2 gases at predetermined ratio in a vacuum chamber to maintain the vacuum level lower than 1 to 500mTorr. Then, the substrate is pre-heated. At third, C and N are induced from an atom radicals implemented on the substrate and a ZnO single crystal film is vaporized on the substrate(3) by using an RF magnetron sputtering method. At third, the partial pressure of the oxygen in the chamber used while vaporizing ZnO film is maintained while the substrate is cooled down slowly. The Ar/O2 ratio is much less than 4/1. Alternatively, the Ar/O2 ratio is much less than 4/1.
Abstract translation: 目的：提供一种用于制造在常温下工作的红外光接收和发射装置的ZnO膜的方法及其装置，以较低成本制造ZnO膜来代替GaN。 构成：在常温下工作的红外光接收和发射装置的ZnO膜的制造方法包括以下步骤。 首先，在真空室中以预定比例包括Ar和O 2气体的气体以保持真空度低于1至500mTorr。 然后，将衬底预热。 第三，通过使用RF磁控溅射法，在基板上实现的原子自由基诱导C和N，并在基板（3）上蒸发ZnO单晶膜。 第三，在使衬底缓慢冷却的同时保持在蒸镀ZnO膜时使用的室中的氧的分压。 Ar / O2比值远低于4/1。 或者，Ar / O 2比远小于4/1。
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Patent Agency Ranking
公开(公告)号：KR1020010046843A
公开(公告)日：2001-06-15
申请号：KR1019990050777
申请日：1999-11-16
Applicant: 한국과학기술연구원
IPC: H01L21/8247
Abstract: PURPOSE: A method for manufacturing a multicomponent oxide ferroelectric thin film including a volatile component is provided to control loss of a volatile component generated in forming the multicomponent oxide thin film by using a radio frequency(RF) magnetron sputtering method. CONSTITUTION: A target(15) composed of a multicomponent oxide material is sputtered to form a multicomponent oxide thin film on a substrate by a radio frequency(RF) magnetron sputtering method. A vacuum chamber where the sputtering process is performed is maintained at a pressure from 200 to 300 milli Torr to reduce loss of a volatile component of the thin film during the sputtering process.
Abstract translation: 目的：提供一种制造包含挥发性成分的多组分氧化物铁电薄膜的方法，以通过使用射频（RF）磁控溅射法来控制在形成多组分氧化物薄膜时产生的挥发性成分的损失。 构成：通过射频（RF）磁控溅射法溅射由多组分氧化物材料组成的靶（15），以在衬底上形成多组分氧化物薄膜。 进行溅射处理的真空室保持在200-300毫乇的压力下，以减少溅射过程中薄膜挥发性成分的损失。
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公开(公告)号：KR1020010017336A
公开(公告)日：2001-03-05
申请号：KR1019990032789
申请日：1999-08-10
Applicant: 한국과학기술연구원
IPC: G01N27/30
Abstract: PURPOSE: Structure of an electrode is provided to improve the accuracy of gas sensing, a recovery speed, and responsiveness and to produce a reproducible electrode. CONSTITUTION: A semiconductor type gas sensor includes: a substrate(1); a lower electrode(2') formed on the upper face of the substrate in a specific pattern; a thin and thick type semiconductor material sensing film(3) formed on the upper face of the substrate whereon the lower electrode is formed; an upper electrode(2") formed on the upper face of the sensing film in a specific pattern; a heater formed in the lower face of the substrate; and an insulating material formed on the lower face whereon the heater is formed. Herein, the upper and lower electrodes are formed in an I shape of a thick or thin film, and made of different materials. With simple change of the position and shape of an electrode without an additional device, the accuracy of gas sensing, a recovery speed, and responsiveness are enhanced. Additionally, a reproducible electrode is provided.
Abstract translation: 目的：提供电极的结构，以提高气体检测的精度，恢复速度和响应性，并产生可再生电极。 构成：半导体型气体传感器包括：基板（1）; 以特定图案形成在所述基板的上表面上的下电极（2'）; 形成在形成下电极的基板的上表面上的薄厚半导体材料感测膜（3）; 以特定图案形成在感测膜的上表面上的上电极（2“）;形成在基板的下表面的加热器;形成在加热器的下表面上的绝缘材料，这里， 上电极和下电极形成为厚薄薄膜的I形，并且由不同的材料制成，在没有附加装置的情况下，电极的位置和形状的简单改变，气体感测的精度，恢复速度和 提高了响应性，另外还提供了可再生电极。
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公开(公告)号：KR1020010013160A
公开(公告)日：2001-02-26
申请号：KR1019997011143
申请日：1998-12-03
Applicant: 한국과학기술연구원 , 주식회사 엘지이아이
IPC: C23C16/44
CPC classification number: C23C16/503 , B05D1/62 , B05D3/148 , B05D5/083 , C23C16/30 , C23C16/50 , C23C16/515 , C23C16/56 , F25B47/003 , F28F13/18 , F28F2245/02 , F28F2245/04
Abstract: PURPOSE: Provided is a plasma polymerization for forming a polymer with hydrophilicity or hydrophobicity on a surface of a material by using a DC discharge plasma or an RF discharge plasma. CONSTITUTION: A method for surface processing by plasma polymerization of a surface of a metal, for enhancing its usefulness in a refrigerating and air-conditioning apparatus by using a DC discharge plasma, comprises the steps of: (a) positioning an anode electrode which is substantially of a metal to be surface-modified and a cathode electrode in a chamber; (b) maintaining a pressure in the chamber at a predetermined vacuum level; (c) blowing a reaction gas comprising an unsaturated aliphatic hydrocarbon monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, the non-polymerizable gas being 50-90% of the entire reaction gas; and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity on the surface of the anode electrode by plasma deposition.
Abstract translation: 目的：提供通过使用DC放电等离子体或RF放电等离子体在材料表面形成具有亲水性或疏水性的聚合物的等离子体聚合。 构成：通过等离子体聚合金属表面处理方法，通过使用DC放电等离子体来提高其在制冷空调装置中的用途，包括以下步骤：（a）将阳极电极 基本上待表面改性的金属和室中的阴极电极; （b）将腔室内的压力保持在预定的真空度; （c）将预定压力的不饱和脂族烃单体气体和预定压力的不可聚合气体的反应气体吹入室内，所述非可聚合气体为整个反应气体的50-90％; 和（d）向电极施加电压以获得DC放电，从而获得由不饱和脂族烃单体气体和非可聚合气体产生的正离子和负离子和自由基组成的等离子体，然后形成 通过等离子体沉积在阳极电极的表面上具有亲水性的聚合物。
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公开(公告)号：KR1020000039496A
公开(公告)日：2000-07-05
申请号：KR1019980054847
申请日：1998-12-14
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: PURPOSE: A polymer culture dish having an improved hydrophilic property and surface adhesiveness is provided which a part of carbon of the activated surface is reacted with a reactive gas after activating the surface by irradiating less than 2,000 eV of ion-beam. CONSTITUTION: A surface modifying apparatus comprises a gas inlet part(20) introducing a reactive gas into a vacuum chamber(10), an ion source(30) producing ion beam, a substrate holder(40) and a vacuum pump(50). The polymer culture dish is built in the substrate holder(40) and the reactive gas is introduced into the vacuum chamber(10) through the gas inlet part(20). Ion-beam having less than 2,000 eV is irradiated to activate the surface of the polymer culture dish from the ion source(30). The surface of the polymer culture is reacted with the reactive gas such as oxygen, nitrogen, carbon dioxide, carbon monoxide, ozone and their mixed gas to produce a hydrophilic group on the surface.
Abstract translation: 目的：提供具有改善的亲水性和表面粘合性的聚合物培养皿，其中活化表面的一部分碳通过照射小于2000eV的离子束而在活化表面后与反应性气体反应。 构成：表面改性装置包括将反应性气体引入真空室（10）的气体入口部分（20），产生离子束的离子源（30），衬底保持器（40）和真空泵（50）。 聚合物培养皿内置在基板保持件（40）中，反应气体通过气体入口部分（20）引入真空室（10）。 照射小于2000eV的离子束从离子源（30）活化聚合物培养皿的表面。 聚合物培养物的表面与氧，氮，二氧化碳，一氧化碳，臭氧及其混合气体等反应性气体反应，在表面产生亲水基团。
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