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公开(公告)号：KR100422371B1
公开(公告)日：2004-03-11
申请号：KR1020010030447
申请日：2001-05-31
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A field emission display device is provided to improve a yield of the field emission display device by forming a TFT(Thin Film Transistor) having an off-set region and a field emitter in the inside of dot pixels of a lower substrate. CONSTITUTION: A channel(402) of a TFT is formed on a part of an organic substrate(401). The channel(402) is formed with undoped poly-crystalline silicon. A source(403) and a drain(404) are formed on both sides of the channel(402). The source(403) and the drain(404) are formed with doped poly-crystalline silicon. A gate insulating layer(405) is formed on the substrate(401) including the channel(402), the source(403), and the drain(404) of the TFT. The gate insulating layer(405) is formed an oxide layer. A gate(406) is formed on a part of the gate insulating layer(405). The gate(406) is formed with metal or doped poly-crystalline silicon. The gate(406) is vertically overlapped with a part of the source(403) and the channel(402). The gate(406) is not overlapped with the drain(404). An interlayer dielectric(407) is formed on the substrate(401). A drain electrode(408) is formed on a part of the interlayer dielectric(407). A buffer electrode(409) is formed on a part of the drain electrode(408). A field emission layer(410) is formed on formed on a part of the buffer electrode(409). A transparent electrode(422) is formed on a glass substrate(421). A plurality of dot pixels including fluorescent materials(423) are formed on the transparent electrode(422).
Abstract translation: 目的：通过在下基板的点像素内部形成具有偏移区域和场致发射体的TFT（薄膜晶体管），来提供场发射显示装置以提高场发射显示装置的成品率。 构成：TFT的沟道（402）形成在有机衬底（401）的一部分上。 沟道（402）由未掺杂的多晶硅形成。 源（403）和漏（404）形成在沟道（402）的两侧。 源极（403）和漏极（404）由掺杂的多晶硅形成。 在包括TFT的沟道（402），源极（403）和漏极（404）的衬底（401）上形成栅绝缘层（405）。 栅极绝缘层（405）形成为氧化物层。 栅极（406）形成在栅极绝缘层（405）的一部分上。 栅极（406）由金属或掺杂多晶硅形成。 栅极（406）与源极（403）和沟道（402）的一部分垂直重叠。 栅极（406）不与漏极（404）重叠。 层间电介质（407）形成在衬底（401）上。 漏电极（408）形成在层间电介质（407）的一部分上。 缓冲电极（409）形成在漏电极（408）的一部分上。 场发射层（410）形成在缓冲电极（409）的一部分上。 透明电极（422）形成在玻璃基板（421）上。 包括荧光材料（423）的多个点像素形成在透明电极（422）上。
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公开(公告)号：KR1020030056573A
公开(公告)日：2003-07-04
申请号：KR1020010086835
申请日：2001-12-28
Applicant: 한국전자통신연구원
IPC: G01B11/26
CPC classification number: G01B11/26
Abstract: PURPOSE: A measuring apparatus for a slant angle of a SIL(Solid Immersion Lens) is provided to prevent a focal signal from generating error by measuring a slant degree of the SIL quantitatively with a principle of a collimator. CONSTITUTION: A measuring apparatus for a slant angle of a SIL(Solid Immersion Lens,211) comprises a light generating device(201), a first condenser(203) and a position sensing device(210). The light generating device generates light when projecting to the SIL formed like a hemisphere. The first condenser collects light reflected from a specular surface(208) on a lower portion of the SIL. The position sensing device measures a slant of the SIL according to a focus collected by the first condenser. A light divider(202) is included to project light generated from the light generating device to the first condenser and to progress light horizontally inside the SIL. Therefore, the focus of the SIL is formed correctly by measuring the slant of the SIL and compensating the slant with measured value.
Abstract translation: 目的：提供用于SIL（固体浸没透镜）的倾斜角的测量装置，以通过用准直器的原理定量测量SIL的倾斜度来防止焦点信号产生误差。 构造：用于SIL（固体浸没透镜211）的倾斜角度的测量装置包括发光装置（201），第一冷凝器（203）和位置感测装置（210）。 当投射到如半球形状的SIL时，发光装置产生光。 第一冷凝器收集从SIL的下部的镜面（208）反射的光。 位置检测装置根据由第一冷凝器收集的焦点测量SIL的倾斜度。 包括分光器（202）以将从发光装置产生的光投射到第一冷凝器，并在SIL内水平地进行光。 因此，通过测量SIL的斜度并用测量值补偿斜面，SIL的重点正确形成。
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公开(公告)号：KR1020030056572A
公开(公告)日：2003-07-04
申请号：KR1020010086834
申请日：2001-12-28
Applicant: 한국전자통신연구원
CPC classification number: H01J1/3048 , H01J9/025 , Y10S977/939 , H01J1/304 , C01B32/05
Abstract: PURPOSE: A cathode for a field emission display is provided to distribute uniformly the electric field to an emitter by forming a catalytic layer at a side portion of a gate hole and growing the emitter on the catalytic layer. CONSTITUTION: A cathode for a field emission display includes a substrate(200), a catalytic layer(230), a dielectric layer(240), a gate electrode(250), an emitter(280), and a gate hole(270). The catalytic layer, the dielectric layer, the gate electrode, and the emitter are stacked on the substrate. The substrate is exposed by the gate hole. The gate electrode and the catalytic layer are formed at both sides of the gate hole, respectively. The gate electrode and the catalytic layer are located at positions of different height, respectively. A buffer layer is formed on an exposed surface of the gate electrode.
Abstract translation: 目的：提供用于场致发射显示器的阴极，通过在栅极孔的侧部形成催化剂层并在催化剂层上生长发射体，均匀地将电场分布到发射极。 构成：用于场发射显示器的阴极包括基底（200），催化层（230），电介质层（240），栅电极（250），发射极（280）和栅极孔（270） 。 催化剂层，电介质层，栅电极和发射极层叠在基板上。 基板被栅极孔暴露。 栅电极和催化剂层分别形成在栅极孔的两侧。 栅电极和催化层分别位于不同高度的位置。 在栅电极的露出表面上形成缓冲层。
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公开(公告)号：KR100388490B1
公开(公告)日：2003-06-25
申请号：KR1019990022660
申请日：1999-06-17
Applicant: 한국전자통신연구원
IPC: H01L21/027
Abstract: PURPOSE: An off-axial aperture with a fly's eye lens and a fabricating method thereof are provided to pass a larger quantity of light through the off-axial aperture, thereby increasing a throughput and facilely fabricating the aperture. CONSTITUTION: The device comprises a light shielding area formed at a center portion; a light penetrating area formed around the light shielding area and comprised of a fly's eye lens. The aperture further comprises a partial light penetrating area formed at a portion except the light shielding area and the light penetrating area and having a lower permeability than that of the light penetrating area. In the aperture, the light penetrating area formed into a quadruple, hexapole or annular type. A method of fabricating the off-axial aperture comprises the steps of: forming a light shielding pattern on an entire surface of a transparent substrate(100); forming the first resist pattern having a curved surface at a fly's eye lens area of the substrate; and performing an etching process to form the fly's eye lens on the substrate.
Abstract translation: 目的：提供一种具有蝇眼透镜的离轴孔径及其制造方法，以使较大量的光通过离轴孔径，从而增加产量并便于制造孔径。 构成：该装置包括形成在中心部分的遮光区域; 在遮光区域周围形成的由蝇眼透镜构成的透光区域。 该孔还包括形成在除遮光区域和透光区域之外的部分处并且具有比透光区域的导磁率低的导磁率的部分光穿透区域。 在光圈中，透光区域形成四极，六极或环形类型。 一种制造离轴孔径的方法包括以下步骤：在透明基板（100）的整个表面上形成光屏蔽图案; 在基板的蝇眼透镜区域形成具有曲面的第一抗蚀剂图案; 并执行蚀刻工艺以在基板上形成蝇眼透镜。
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公开(公告)号：KR100385859B1
公开(公告)日：2003-06-02
申请号：KR1020000082805
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01L29/78
CPC classification number: H01L29/7813 , H01L29/4232 , H01L29/4238
Abstract: A method for manufacturing a trench-gate type power semiconductor device is provided A drift region having a low concentration of a first conductivity type and a body region of a second conductivity type are formed on a semiconductor substrate having a high concentration of the first conductivity type A trench is formed using a nitride layer pattern and a sidewall oxide layer formed at sidewalls of the nitride layer pattern as a mask, and then the sidewall oxide layer is removed The corners of the trench are rounded by performing a heat treatment in a hydrogen atmosphere A source region having a high concentration of the first conductivity type is formed using the nitride layer pattern as a mask. The nitride layer pattern is removed, and an upper oxide layer pattern is formed to cover a predetermined portion of the source region and the gate conductive layer. A body contact region of the second conductivity type is formed using the upper oxide layer pattern as a mask A source electrode is formed to be electrically connected to the body contact region, and a drain electrode is formed to be electrically connected to the semiconductor substrate
Abstract translation: 提供了一种用于制造沟槽栅极型功率半导体器件的方法。在具有第一导电类型的高浓度的半导体衬底上形成具有低浓度的第一导电类型的漂移区和第二导电类型的体区 使用形成在氮化物层图案的侧壁处的氮化物层图案和侧壁氧化物层作为掩模来形成沟槽，然后去除侧壁氧化物层。通过在氢气氛中进行热处理使沟槽的拐角变圆 使用氮化物层图案作为掩模形成具有第一导电类型的高浓度的源极区域。 去除氮化物层图案，并且形成上氧化物层图案以覆盖源区和栅导电层的预定部分。 使用上氧化层图案作为掩模形成第二导电类型的体接触区域。源电极形成为电连接到体接触区域，并且漏电极形成为电连接到半导体衬底
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Patent Agency Ranking
公开(公告)号：KR100382149B1
公开(公告)日：2003-05-09
申请号：KR1020000072033
申请日：2000-11-30
Applicant: 한국전자통신연구원
IPC: H01L21/31
CPC classification number: H01L21/0228 , C23C16/409 , C23C16/45542 , C23C16/45544 , C23C16/50 , H01L21/02194 , H01L21/02197 , H01L21/02274 , H01L21/31691 , Y10S438/905
Abstract: An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.
Abstract translation: 提供了一种用于形成锶 - 钽 - 氧化物膜的设备及其使用原子层沉积工具的方法。 在通过等离子体和原子层沉积沉积的锶 - 钽 - 氧化物膜中，其泄漏电流非常低，并且其介电常数取决于加热条件在30至100的范围内。 因此，该方法提供了以下结构：i）NDRO型铁电存储器件的绝缘膜，其具有金属膜/铁电膜/绝缘膜/硅的结构，ii）替代氧化硅膜的栅氧化膜 ，和iii）电致发光显示（ELD）装置的绝缘膜。
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公开(公告)号：KR100362376B1
公开(公告)日：2002-11-23
申请号：KR1020000041574
申请日：2000-07-20
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: 본 발명은 전자소자의 진공패키징 기술에 관한 것이다. 전자소자로는 평판표시소자, 각종 센서, 엑튜에이터 등이 포함되며 특히 자발광 평판표시소자인 전계발광 표시소자와 플라즈마 디스플레이의 패널의 진공패키징에 본 발명의 기술을 적용한다.
전자소자의 진공패키징을 위한 평탄화장치는 프릿유리가 도포된 기판이 안착되는 안착수단과, 상기 안착수단에 대해 상대적인 운동을 하면서 상기 기판에 도포된 프릿유리를 압착하는 압착수단, 및 상기 안착수단과 압착수단 사이의 간격을 조절하여 상기 프릿유리의 압착정도를 조절하는 조절수단을 포함한다. 또한, 진공패키징 방법은 상기 상부기판과 하부기판 중 어느 하나의 기판에 프릿유리를 도포하는 제 1 단계와; 상기 기판에 도포된 프릿유리를 건조시키는 제 2 단계; 상기 건조된 프릿유리를 압착하여 상기 프릿유리의 두께를 조절함과 아울러 평탄화하는 제 3 단계; 및 상기 평탄화된 프릿유리를 예비소결하고 상기 두 기판을 정렬하며, 상기 프릿유리를 소결시켜 상기 두 기판을 실링하는 제 4 단계를 포함한다.
이러한 본 발명에 따르면, 프릿유리의 건조공정에 이어서 연속적으로 프릿유리의 평탄화공정을 수행하기 때문에 프릿유리의 두께를 쉽게 조절할 수 있으며, 상부기판과 하부기판을 수월하게 정렬할 수 있다. 또한, 프릿유리를 사용한 진공패키징 공정시 유리기판의 파손을 줄일 수 있으며, 국부적인 표면가열방법으로 프릿유리를 소결시켜 상부기판과 하부기판을 실링시킬 수 있다.-
公开(公告)号：KR100355456B1
公开(公告)日：2002-10-11
申请号：KR1019990031256
申请日：1999-07-30
Applicant: 한국전자통신연구원
IPC: C09K11/08
CPC classification number: C09K11/7703
Abstract: 본발명은형광디스플레이용적색형광체와그것의제조방법에관한것으로, 본발명에따른형광디스플레이용형광체는, SrTiO모체에적어도 1개이상의 2가전이금속원소와 2개이상의 3가금속원소를포함하며, 하기일반식으로표현되는조성을갖는것을특징으로하며, 본발명에따른형광디스플레이용형광체제조방법은, 하기일반식으로표현되는조성에따라, 스트론튬산화물과, 티타늄산화물과, Zn,Mn,Co,Ni,Cu,Cd중에서선택된적어도 1종이상의 2가전이금속의산화물과, Ga,Al,In,B 중에서선택된적어도 1종이상의 3가금속의산화물과, 프라세오디뮴(Pr) 산화물또는프라세오디뮴염의수용액에, 소정의용매를가하여균일하게혼합하는단계와, 상기혼합물을소성하는단계를포함하는것을특징으로한다: SrTiMNO:Pr이때, M은 Zn, 또는 Mn,Co,Ni,Cu,Cd의 2가전이금속을나타내고, N은 Ga, 또는 Al,In,B의 3가금속원소를나타내며, 0≤0.1, 0≤0.1, 0≤0.1이다. 본발명에따른형광체를형광디스플레이에적용하거나 FED 형광체의양극판으로사용하게되면, 장시간의전자주사에의한형광체의파괴를방지할수 있어음극판과양극판사이에있는공간의진공도를깨뜨리지않으므로패널의성능을장시간유지할수 있다.
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公开(公告)号：KR100345305B1
公开(公告)日：2002-07-25
申请号：KR1020000082311
申请日：2000-12-26
Applicant: 한국전자통신연구원
IPC: H01L21/334
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