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公开(公告)号：KR1020170098521A
公开(公告)日：2017-08-30
申请号：KR1020160020540
申请日：2016-02-22
Applicant: 한국전자통신연구원
Abstract: 본발명은레이저특성을개선할수 있도록한 파장가변레이저장치에관한것이다. 본발명의실시예에의한파장가변레이저장치는광신호를출력하는이득부와; 상기이득부의일측에위치되며, 상기광신호를제 1파장간격으로반사하는제 1회절격자반사기와; 상기이득부의타측에위치되며, 상기광신호를제 2파장간격으로반사하는제 2회절격자반사기와; 상기이득부와상기제 2회절격자반사기사이에위치되며, 제 3파장간격의광신호만이출력되도록제어하는광필터를구비한다.
Abstract translation: 本发明涉及能够改善激光特性的波长可调激光装置。 根据本发明实施例的可调谐激光装置包括：用于输出光信号的增益单元; 第一衍射光栅反射器，其位于增益部分的一侧并以第一波长间隔反射光信号; 位于增益部分的另一侧并且以第二波长间隔反射光信号的第二衍射光栅反射器; 以及位于增益部分和第二衍射光栅反射器之间并被配置为仅输出具有第三波长间隔的光信号的滤光器。
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公开(公告)号：KR1020170095453A
公开(公告)日：2017-08-23
申请号：KR1020160016412
申请日：2016-02-12
Applicant: 한국전자통신연구원
CPC classification number: H01Q9/0407 , H01Q1/50 , H01Q9/0442
Abstract: 본발명은패치안테나에관한것으로, 본발명의일 실시예에따른패치안테나는, 복수의유전체층들이적층된다층기판; 상기다층기판의중심영역의외부에서, 상기복수의유전체층들사이에개재된적어도하나의금속패턴층; 상기다층기판의상부면상에배치되고, 상기중심영역내에위치하는안테나패치; 상기다층기판의하부면에배치된접지층; 상기복수의유전체층들을관통하여상기금속패턴층과상기접지층을전기적으로연결하고, 상기중심영역을에워싸는복수의연결비아패턴들; 상기다층기판의상부면상에배치되고상기중심영역외부에위치하는제1 전송선로부와, 상기다층기판의상부면상에배치되고상기중심영역내에위치하는제2 전송선로부를포함하는전송선로; 및상기다층기판의중심영역내에서상기제2 전송선로부의아래에위치하는임피던스변환기를포함할수 있다.
Abstract translation: 本发明涉及贴片天线，并且根据本发明实施例的贴片天线包括：堆叠的多个介电层; 至少一个金属图案层，介于多层基板的中心区域外的多个介电层之间; 天线贴片，设置在所述多层基板的上表面上并位于所述中央区域中; 设置在多层基板的下表面上的接地层; 多个连接通孔图案，其通过所述多个电介质层电连接所述金属图案层和所述接地层并且围绕所述中心区域; 第一传输线部分，其设置在所述多层基板的上表面上并且位于所述中心区域的外侧;以及第二传输线部分，其设置在所述多层基板的上表面上并且位于所述中央区域中; 以及位于多层衬底的中心区域内的第二传输线部分下方的阻抗转换器。
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公开(公告)号：KR1020170059520A
公开(公告)日：2017-05-31
申请号：KR1020150163258
申请日：2015-11-20
Applicant: 한국전자통신연구원
IPC: H01L29/43 , H01L29/778 , H01L29/45 , H01L29/772 , H01L21/02
Abstract: 본발명의실시예에따른전계효과트랜지스터는서로마주하는제1 면및 제2 면을포함하는활성층; 상기활성층의상기제1 면상에형성되고, 상기활성층의상기제1 면을노출하는제1 개구영역을포함하는캡핑층; 상기캡핑층상에형성된소스오믹전극및 드레인오믹전극; 상기활성층의상기제1 면상부에배치되고, 상기제1 개구영역내부에배치된일부를포함하는전면게이트; 상기활성층의상기제2 면상부에배치되고, 상기소스오믹전극및 상기드레인오믹전극사이의상기활성층의상기제2 면을노출하는제2 개구영역을포함하는반도체기판; 및상기활성층의상기제2 면상부에배치되고, 상기제2 개구영역내부에배치되어상기전면게이트에중첩된후면게이트를포함할수 있다.
Abstract translation: 根据本发明实施例的场效应晶体管包括：有源层，包括彼此面对的第一表面和第二表面; 覆盖层，形成在有源层的第一表面上并且包括暴露有源层的第一表面的第一开口区域; 形成在覆盖层上的源欧姆电极和漏欧姆电极; 布置在有源层的第一侧上并且包括设置在第一开口区内的部分的前栅极; 半导体衬底，所述半导体衬底设置在所述有源层的所述第二表面上并且包括暴露所述源极欧姆电极和所述漏极欧姆电极之间的所述有源层的所述第二表面的第二开口区域; 以及布置在有源层的第二侧之上并设置在第二开口区域内以与前栅极重叠的后栅极。
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公开(公告)号：KR1020160001744A
公开(公告)日：2016-01-07
申请号：KR1020140078693
申请日：2014-06-26
Applicant: 한국전자통신연구원
IPC: H01L29/778 , H01L21/336
CPC classification number: H01L21/28264 , H01L29/2003 , H01L29/407 , H01L29/42316 , H01L29/4236 , H01L29/452 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/7786
Abstract: 본발명의일 실시예에따른반도체소자는, 기판, 상기기판위에형성되는활성층, 상기활성층위에형성되며제1 개구부를갖는보호층, 상기보호층위에형성되는소스전극, 구동게이트전극및 드레인전극및 상기제1 개구부위에형성되는제1 추가게이트전극을포함하며, 상기소스전극, 상기드레인전극및 상기구동게이트전극에각각인가되는전압으로인해상기활성층, 상기보호층및 상기구동게이트전극에전기장이인가되며, 상기제1 추가게이트전극은상기활성층, 상기보호층및 상기구동게이트전극중 적어도일부에인가되는전기장의크기를감쇄시킨다.
Abstract translation: 根据本发明的一个实施例的半导体器件包括：衬底; 形成在所述基板上的有源层; 形成在有源层上并具有第一开口单元的保护层; 源电极，驱动栅电极和形成在保护层上的漏电极; 以及形成在所述第一开口单元上的第一附加栅电极。 通过分别施加到源电极，漏电极和驱动栅电极的电压，向有源层，保护层和驱动栅电极施加电场。 第一附加栅电极衰减施加到有源层，保护层和驱动栅电极的至少一部分的电场的尺寸。
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公开(公告)号：KR1020140080750A
公开(公告)日：2014-07-01
申请号：KR1020120146827
申请日：2012-12-14
Applicant: 한국전자통신연구원
IPC: G01R31/26
CPC classification number: G01R1/0466 , G01R1/0458
Abstract: According to an embodiment of the present invention, a semiconductor device testing apparatus comprises a first socket accommodating a package on which a semiconductor device to be tested is mounted; and a second socket coupled to the first socket. The first socket includes an upper part having a hole accommodating the package and a terminal pad formed at both side ends of the hole to hold input and output terminals of the package; and a lower part having a heating room, which accommodates a heater to heat the semiconductor device, and a temperature sensing part for measuring the temperature of the semiconductor device in the heating room. The second socket comprises a probe card with a pattern to receive a test signal from an external power source.
Abstract translation: 根据本发明的一个实施例，一种半导体器件测试装置包括容纳封装的第一插座，其上安装有要测试的半导体器件; 以及耦合到第一插座的第二插座。 第一插座包括具有容纳封装的孔的上部和形成在孔的两个侧端处以保持封装的输入和输出端子的端子焊盘; 以及具有加热室的下部，其容纳用于加热半导体器件的加热器，以及用于测量加热室中的半导体器件的温度的温度检测部。 第二插座包括具有从外部电源接收测试信号的模式的探针卡。
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Patent Agency Ranking
公开(公告)号：KR1020140080574A
公开(公告)日：2014-07-01
申请号：KR1020120144126
申请日：2012-12-12
Applicant: 한국전자통신연구원
IPC: H01L29/778 , H01L29/40 , H01L29/423 , H01L29/66 , H01L29/20 , H01L21/285 , H01L21/28 , H01L29/201
CPC classification number: H01L29/66462 , H01L21/02118 , H01L21/0217 , H01L21/02178 , H01L21/0254 , H01L21/28264 , H01L21/28593 , H01L21/31111 , H01L21/31144 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/404 , H01L29/42316 , H01L29/42376 , H01L29/778 , H01L29/7786
Abstract: Provided is a field effect transistor. The transistor includes a capping layer provided on a substrate; source and drain ohmic electrodes spaced apart from each other on the capping layer; first and second insulating layers sequentially laminated on the capping layer to cover the source and drain ohmic electrodes; a Γ-shaped gate electrode including a leg part passing through the second insulating layer, the first insulating layer, and the capping layer and connected with the substrate between the source and drain ohmic electrodes and a head part extended to the second insulating layer; a first planarization layer provided on the second insulating layer to cover the Γ-shaped gate electrode; and a first electrode passing through the first planarization layer and the second and first insulating layers, and connected with the source and drain ohmic electrodes while the being extended to the first planarization layer.
Abstract translation: 提供了场效应晶体管。 晶体管包括设置在基板上的封盖层; 源极和漏极欧姆电极在封盖层上彼此间隔开; 顺序层压在覆盖层上以覆盖源极和漏极欧姆电极的第一和第二绝缘层; Γ形栅电极，包括通过第二绝缘层的脚部，第一绝缘层和覆盖层，并且与源极和漏极欧姆电极之间的衬底连接，以及延伸到第二绝缘层的头部; 设置在所述第二绝缘层上以覆盖所述Γ形栅电极的第一平坦化层; 以及穿过第一平坦化层和第二和第一绝缘层的第一电极，并且在被延伸到第一平坦化层的同时与源极和漏极欧姆电极连接。
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公开(公告)号：KR1020140010479A
公开(公告)日：2014-01-27
申请号：KR1020120075571
申请日：2012-07-11
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/778
CPC classification number: H01L21/28008 , H01L21/28587 , H01L29/42316 , H01L29/66863
Abstract: The present invention relates to a method for manufacturing a high performance field effect type compound semiconductor device in which a leakage current is decreased and breakdown voltage is improved. The method for manufacturing field effect type compound semiconductor device comprises the following steps of: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa area vertically in predetermined areas of the first oxide layer, ohmic layer, and active layer; flattening the mesa area after forming a nitride layer by depositing a nitride film on the mesa area; forming an ohmic electrode on the first oxide layer; forming a macro-gate pattern having an under-cut shaped profile by forming a second oxide layer on the semiconductor substrate on which the ohmic electrode is formed, forming a micro-gate resist pattern, and performing dry-etching for three insulating layers including the first oxide layer, nitride layer, and second oxide layer; forming a gate recess area by applying a copolymer resist over the semiconductor substrate on which the micro-gate pattern is formed and forming a head pattern of a gamma gate electrode; and forming a gamma gate electrode by depositing a refractory metal on the semiconductor substrate on which the gate recess area is formed.
Abstract translation: 本发明涉及一种制造泄漏电流降低并提高击穿电压的高性能场效应型化合物半导体器件的方法。 制造场效应型化合物半导体器件的方法包括以下步骤：在衬底上堆叠有源层和欧姆层，并在欧姆层上形成第一氧化物层; 在第一氧化物层，欧姆层和有源层的预定区域中垂直形成台面区域; 通过在台面区域上沉积氮化物膜，在形成氮化物层之后使台面区域变平; 在所述第一氧化物层上形成欧姆电极; 通过在其上形成欧姆电极的半导体衬底上形成第二氧化物层，形成具有底切形状的宏栅图形，形成微栅抗蚀剂图案，并且对包括第二氧化物层的三个绝缘层进行干法蚀刻 第一氧化物层，氮化物层和第二氧化物层; 通过在其上形成微栅极图案的半导体衬底上施加共聚物抗蚀剂并形成伽马栅电极的头部图案，形成栅极凹部区域; 以及通过在其上形成有所述栅极凹部区域的所述半导体衬底上沉积难熔金属来形成γ栅电极。
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公开(公告)号：KR1020130085522A
公开(公告)日：2013-07-30
申请号：KR1020110135221
申请日：2011-12-15
Applicant: 한국전자통신연구원
CPC classification number: H04B10/90 , H04B2210/006
Abstract: PURPOSE: A terahertz receiver and a receiving method of terahertz signals using the same are provided to have high sensitivity signal-receiving performance by combining terahertz signals arrayed by a photoelectric conversion. CONSTITUTION: A plurality of terahertz wave detectors (111-113) detects terahertz band signals from received signals. A plurality of light signal processers (120,130,140) converts the detected terahertz signals into optical signals. An optical coupler (150) couples the converted optical signals to one optical signal. A photoelectric conversion diode (160) converts the integrated optical signal into an electric signal. An amplifier (170) amplifies the electric signal. [Reference numerals] (111,112,113) Terahertz wave detector; (121,131,141) Light source; (122,132,142) Light modulator; (123,133,143) Light amplifier; (150) Optical coupler; (160) Photoelectric conversion diode; (170) Amplifier; (AA) Received signal
Abstract translation: 目的：提供太赫兹接收机和使用其的太赫兹信号的接收方法，通过组合通过光电转换排列的太赫兹信号来具有高灵敏度的信号接收性能。 构成：多个太赫兹波检测器（111-113）从接收的信号中检测太赫兹波段信号。 多个光信号处理器（120,130,140）将检测到的太赫兹信号转换为光信号。 光耦合器（150）将转换的光信号耦合到一个光信号。 光电转换二极管（160）将集成的光信号转换为电信号。 放大器（170）放大电信号。 （参考编号）（111,112,113）太赫兹波检测器; （121,131,141）光源; （122,132,142）光调制器; （123,133,143）光放大器; （150）光耦合器; （160）光电转换二极管; （170）放大器; （AA）接收信号
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公开(公告)号：KR1020130067610A
公开(公告)日：2013-06-25
申请号：KR1020110134348
申请日：2011-12-14
Applicant: 한국전자통신연구원
IPC: G02B6/12
CPC classification number: G02B6/122 , H01L31/105
Abstract: PURPOSE: A waveguide type photomixer is provided to reduce a moving distance of an electron-hole pair and a RC time constant. CONSTITUTION: A waveguide type photomixer(100) includes a substrate(101), a buffer layer(102), a first cladding layer(107), an absorber(110), a second clad layer(108), a contact layer(109), a first electrode unit(103), and a second electrode unit(104). The absorber is formed between the first clad layer and the second clad layer. If the absorber forms a junction area smaller than the first clad layer and the second clad layer, a RC time constant, which determines an operation speed of the photo mixer, becomes smaller and the operation speed of the photo mixer increases.
Abstract translation: 目的：提供一种波导型光混合器来减少电子 - 空穴对的移动距离和RC时间常数。 构成：波导型光混合器（100）包括基板（101），缓冲层（102），第一覆层（107），吸收体（110），第二覆层（108），接触层 ），第一电极单元（103）和第二电极单元（104）。 吸收体形成在第一覆盖层和第二覆盖层之间。 如果吸收体形成小于第一包层和第二包层的结面积，则确定光混合器的操作速度的RC时间常数变小，并且光混合器的操作速度增加。
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公开(公告)号：KR101159735B1
公开(公告)日：2012-06-28
申请号：KR1020090023440
申请日：2009-03-19
Applicant: 한국전자통신연구원
Abstract: 본 발명의 폴디드 다이폴 안테나는 광전도 기판 상에 구불구불한 형태로 형성된 미앤더 라인(meander line)으로 이루어져 있으며, 상기 미앤더 라인의 수평방향 길이, 라인 간격, 폭 및 라인 개수의 최적화에 의해 종래의 다이폴 안테나 보다 훨씬 높은 수 kΩ의 입력 임피던스를 갖는 것을 특징으로 한다. 따라서, 본 발명의 폴디드 다이폴 안테나를 이용하면 10kΩ 이상의 출력 임피던스를 갖는 포토믹서와의 임피던스 정합 특성이 크게 향상되므로, 테라헤르츠 연속파의 출력을 크게 향상시킬 수 있다.
테라헤르츠 대역 연속파(terahertz continuous wave), 포토믹서(photomixer), 폴디드 다이폴 안테나(folded dipole antenna), 입력 임피던스(input impedance), 출력 임피던스(output impedance), 스트립(strip)
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