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公开(公告)号：KR1020130020083A
公开(公告)日：2013-02-27
申请号：KR1020110082479
申请日：2011-08-18
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0445 , H01L31/18
Abstract: PURPOSE: A method for fabricating CuInSe2 particles using a hydrothermal method for solar cells is provided to improve crystallization by using metal powder instead of poisonous organic metal precursor. CONSTITUTION: A metal powder raw material is mixed with a solvent including acetic acid and water to manufacture reaction solution. The metal powder includes copper powder, indium powder, and selenium powder. The reaction solution reacts with auto clave to manufacture CuInSe2 particles.
Abstract translation: 目的：提供使用太阳能电池的水热法制造CuInSe2颗粒的方法，以通过使用金属粉末代替有毒金属前体来改善结晶。 构成：将金属粉末原料与乙酸，水等溶剂混合，制作反应溶液。 金属粉末包括铜粉，铟粉和硒粉。 反应溶液与自动蒸馏器反应制造CuInSe2颗粒。
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112.发明公开
公开(公告)号：KR1020120084045A
公开(公告)日：2012-07-27
申请号：KR1020110005338
申请日：2011-01-19
Applicant: 한국화학연구원
IPC: H01B1/14 , H01L31/04 , H01L31/0224
CPC classification number: Y02E10/50
Abstract: PURPOSE: A conductive ink composition for silicon solar cell electrode formation is provided to apply to a non-contactable print process which does not give physical damages to a substrate. CONSTITUTION: A conductive ink composition for silicon solar cell electrode formation comprises 1-10 wt% of glass frit nano particle and 10-60 wt% of metal nano particle. The metal nano particle is a mixture or an alloy selected from silver, copper, gold, platinum, and nickel. A solar battery front electrode comprises a silicon semiconductor substrate(201), an emitter layer(202), a first conductive layer(204), and a second conductive layer which is formed on top of the first conductive layer(205).
Abstract translation: 目的：提供一种用于硅太阳能电池电极形成的导电油墨组合物，以适用于不会对基材造成物理损坏的非接触式印刷方法。 构成：用于硅太阳能电池电极形成的导电油墨组合物包含1-10重量％的玻璃料纳米颗粒和10-60重量％的金属纳米颗粒。 金属纳米颗粒是选自银，铜，金，铂和镍的混合物或合金。 太阳能电池前电极包括硅半导体衬底（201），发射极层（202），第一导电层（204）和形成在第一导电层（205）的顶部上的第二导电层。
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公开(公告)号：KR1020110104185A
公开(公告)日：2011-09-22
申请号：KR1020100023166
申请日：2010-03-16
Applicant: 한국화학연구원
CPC classification number: C01B32/184 , B01J27/10 , B82Y40/00 , C01P2004/20 , C01P2004/64
Abstract: 본 발명은 신규한 2차원 그라펜 나노리본(Two-dimensional graphene nanoribbons) 및 이의 제조방법에 관한 것이다.
자세하게는 유기합성적 제조방법을 이용한 고품질의 그라펜 소재 및 그라펜의 에지(Edge)에 기능성 유기 치환체의 결합을 통하여 기능 제어된 그라펜 나노리본 및 이의 제조방법을 제공한다. 본 발명에 따라 제조된 그라펜 나노리본은 길이가 20 내지 80 nm이고, 폭이 약 2.5 nm이며, 두께가 약 0.16 내지 0.17nm의 2차원 구조를 갖는 것이 특징이다.-
114.发明公开
公开(公告)号：KR1020110024174A
公开(公告)日：2011-03-09
申请号：KR1020090082061
申请日：2009-09-01
Applicant: 한국화학연구원
CPC classification number: C01G3/006 , B82Y30/00 , B82Y40/00 , C01B19/002 , C01G15/006 , C01P2004/64 , H01L31/18
Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-gallium-selenium(CuIn_xGa_1-xSe_2) nano particles is provided to control the particle of the copper-indium-gallium-selenium in a nano scale by controlling the size of an intermediate complex. CONSTITUTION: A complex solution containing copper and indium is prepared by reacting a copper compound, an indium compound, and a polymer electrolyte represented by chemical formula 1. A selenium compound is introduced into the complex solution, and copper-indium-(gallium-)selenium nano particles are prepared at low temperature. In chemical formula 1, R1 represents C6 to C30 aryl group, C1 to C18 alkyl group, C2 to C18 alkenyl group, or C3 to C18 cycloalkyl group. R2 is selected from a group including carboxylic acid, sulfonate, sulfate, ester sulfate, and phosphate. M1 is selected from sodium, ammonium, potassium, and amine. n represents an integer of 1 to 1000, and m represents an integer of 1 to 1000.
Abstract translation: 目的：提供一种制造低温水性铜铟镓硒（CuIn_xGa_1-xSe_2）纳米颗粒的方法，通过控制纳米尺度的铜铟镓硒颗粒的尺寸 中间复合体。 构成：通过铜化合物，铟化合物和由化学式1表示的聚合物电解质的反应制备含有铜和铟的复合溶液。将硒化合物引入复合溶液中，并将铜铟 - （镓） 硒纳米颗粒在低温下制备。 在化学式1中，R 1表示C 6〜C 30芳基，C 1〜C 18烷基，C 2〜C 18烯基或C 3〜C 18环烷基。 R2选自羧酸，磺酸盐，硫酸盐，酯硫酸盐和磷酸盐。 M1选自钠，铵，钾和胺。 n表示1〜1000的整数，m表示1〜1000的整数。
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公开(公告)号：KR1020100054313A
公开(公告)日：2010-05-25
申请号：KR1020080113183
申请日：2008-11-14
Applicant: 한국화학연구원
IPC: C01G15/00
Abstract: PURPOSE: Novel gallium alkoxide compounds and a preparing method thereof are provided, which makes manufacture of the pure gallium oxide possible in the low temperature. CONSTITUTION: A gallium alkoxide compound is represented as the chemical formula 1, Ga[O-A-NR^1R^2]_x[R^3]_3-x. In the chemical formula 1, A is alkylene of C2-C5, A is substituted for linear or branched alkyl of one or more C1-C5, R^1 to R^3 are each other independently linear or the branched alkyl of C1-C5, X is fixed number of 1 to 3. The manufacturing method of the gallium alkoxide compound of the chemical formula 1 is to react the gallium compound of the chemical formula 3, GaR^3_3 and alcohol of chemical formula 4, HO-A-NR^1R^2.
Abstract translation: 目的：提供新型的烷氧化镓化合物及其制备方法，这使得纯氧化镓在低温下的制造成为可能。 构成：烷氧基铝化合物以化学式1表示，Ga [O-A-NR] 1R ^ 2] _x [R ^ 3] _3-x。 在化学式1中，A是C 2 -C 5的亚烷基，A代替一个或多个C 1 -C 5的直链或支链烷基，R 1至R 3各自独立地为直链或C1-C5的支链烷基 X为1〜3的固定数。化学式1的烷氧化镓化合物的制造方法是使化学式3的镓化合物，GaR 3 3 3和化学式4的醇HO-A-NR ^ 1R ^ 2。
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Patent Agency Ranking
公开(公告)号：KR1020100024568A
公开(公告)日：2010-03-08
申请号：KR1020080083183
申请日：2008-08-26
Applicant: 한국화학연구원
CPC classification number: C07F19/00 , C23C16/403 , C23C16/45525
Abstract: PURPOSE: A method for preparing an aluminum amino alkoxide compound is provided to be used as a raw material for thin film deposition or alloy deposition. CONSTITUTION: An aluminum amino alkoxide compound is denoted by chemical formula 1(Al[O-A-NR^1R^2]2[NR^3_2]). A method for preparing the aluminum amino alkoxide compound comprises: a step of reacting an alkali metal salt of chemical formula 4(MO-A-NR^1R^2) with an aluminum compound of chemical formula 3(AlX3) to obtain a compound of chemical formula 5(Al[O-A-NR^1R^2]2X); and a step of reacting an alkali metal salt of chemical formula 6(MNR^3_2) with the compound of chemical formula 5. The aluminum amino alkoxide compound is also prepared by reacting an amino alcohol compound of chemical formula 8(HO-A-NR^1R^2) with an aluminum amide compound of chemical formula 7(Al[NR^3_2]3).
Abstract translation: 目的：提供一种制备铝氨基醇盐化合物的方法，用作薄膜沉积或合金沉积的原料。 构成：铝氨基醇盐化合物由化学式1（Al [O-A-NR] 1R ^ 2] 2 [NR 3] 2]表示。 制备铝氨基醇盐化合物的方法包括：使化学式4的碱金属盐（MO-A-NR 1 1R 2）与化学式3的铝化合物（AlX 3）反应的步骤，得到 化学式5（Al [OA-NR] 1R ^ 2] 2X）; 和化学式6（MNR 3/3）的碱金属盐与化学式5的化合物反应的步骤。铝氨基醇盐化合物也可通过使化学式8的氨基醇化合物（HO-A-NR （1R [3']）与化学式7的铝酰胺化合物（Al [NR 3] 2）3）。
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公开(公告)号：KR1020100024558A
公开(公告)日：2010-03-08
申请号：KR1020080083172
申请日：2008-08-26
Applicant: 한국화학연구원
CPC classification number: C07F5/00 , B82B3/00 , C23C16/40 , C23C16/45525
Abstract: PURPOSE: A novel indium amino alkoxide compound is provided to prepare thin film deposition or various alloys. CONSTITUTION: An indium amino alkoxide compound is denoted by chemical formula 1, (In[O-A-NR^1R^2]2[NR^3_2]). In chemical formula 1, A is C2-C5 alkylene; R^1 and R^2 are dependently hydrogen or C1-C5 linear or branched alkyl group; and R^3 is C1-C5 linear or branched alkyl group or tri(C1-C5)alkylsilyl group. A method for preparing an indium amino alkoxide compound comprises: a step of reacting alkali metal salt of chemical formula 4(MO-A-NR^1R^2) with an indium compound of chemical formula 2(InX3) to obtain a compound of chemical formula 5(In[O-A-NR^1R^2]2X); and a step of reacting the compound of chemical formula 5 with alkali metal salt of chemical formula 6(MNR^3_2). A thin film and nanomaterial containing indium are prepared using the compound of chemical formula 1 as a precursor. The thin film containing the indium is formed through chemical vapor deposition(MOCVD) or atomic layer deposition(ALD).
Abstract translation: 目的：提供新型的铟氨基醇盐化合物以制备薄膜沉积或各种合金。 构成：铟氨基醇盐化合物由化学式1（In [O-A-NR ^ 1R ^ 2] 2 [NR 3/3]]表示。 在化学式1中，A是C 2 -C 5亚烷基; R 1和R 2分别是氢或C 1 -C 5直链或支链烷基; 且R 3为C 1 -C 5直链或支链烷基或三（C 1 -C 5）烷基甲硅烷基。 制备铟氨基烷氧基化合物的方法包括：使化学式4的碱金属盐（MO-A-NR 1 1R 2）与化学式2的铟化合物（InX 3）反应得到化学式 式5（In [OA-NR 1 1R 2] 2X）; 和使化学式5的化合物与化学式6的碱金属盐（MNR 3 3）反应的步骤。 使用化学式1的化合物作为前体制备含有铟的薄膜和纳米材料。 通过化学气相沉积（MOCVD）或原子层沉积（ALD）形成含有铟的薄膜。
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公开(公告)号：KR1020090124694A
公开(公告)日：2009-12-03
申请号：KR1020080051048
申请日：2008-05-30
Applicant: 홍익대학교 산학협력단 , 한국원자력연구원 , 한국화학연구원
IPC: H01L29/788 , H01L27/115 , H01L21/8247 , B82Y10/00
CPC classification number: H01L29/66825 , B82Y10/00 , H01L21/0226 , H01L29/42324 , H01L29/788
Abstract: PURPOSE: A nano floating gate memory and manufacturing method thereof are provided to obtain the memory characteristic by irradiating electron beam on the insulating layer of high dielectric constant. CONSTITUTION: The semiconductor substrate is prepared(S11). The charge storage layer is formed in the above semiconductor substrate by the atomic layer deposition reaction. The insulating layer is formed in the semiconductor substrate(S12). The electronic beam is irradiated in the surface of the insulating layer(S13). The insulating layer of dielectric constant is the high dielectric constant which is larger than 3. The thickness of insulating layer is 0.1~100nm.
Abstract translation: 目的：提供一种纳米浮动栅极存储器及其制造方法，通过在高介电常数的绝缘层上照射电子束来获得存储特性。 构成：制备半导体衬底（S11）。 电荷存储层通过原子层沉积反应形成在上述半导体衬底中。 在半导体衬底中形成绝缘层（S12）。 在绝缘层的表面照射电子束（S13）。 介电常数绝缘层的介电常数大于3.绝缘层的厚度为0.1〜100nm。
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公开(公告)号：KR100927700B1
公开(公告)日：2009-11-18
申请号：KR1020080025719
申请日：2008-03-20
Applicant: 한국화학연구원
Abstract: PURPOSE: A method for manufacturing a metal chalcogenide of nano size using an organic metal complex and chalcogen atom is provided to produce the metal chalcogenide without separate reductant. CONSTITUTION: A method for manufacturing a metal chalcogenide of nano size using an organic metal complex and chacogen atom comprises a step of reacting a metal aminoalkoxide and chalcogenide atom. The metal aminoalkoxide and the chalcogenide are denoted by the chemical formulas 1 and 2 (MaX), respectively. In the chemical formulas 1 and 2, M is transition metal atom, m is 1-3 of integer, R1 to R4 is independently linear or branched alkyl group of C1-C5.
Abstract translation: 目的：提供一种使用有机金属络合物和硫属元素原子来制造纳米尺寸的金属硫属元素化物的方法，以产生没有单独的还原剂的金属硫族元素化物。 构成：使用有机金属络合物和chacogen原子制造纳米尺寸的金属硫族化合物的方法包括使金属氨基烷氧化物和硫族化物原子反应的步骤。 金属氨基醇盐和硫族化合物分别由化学式1和2（MaX）表示。 在化学式1和2中，M是过渡金属原子，m是1-3的整数，R1至R4独立地是C1-C5的直链或支链烷基。
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公开(公告)号：KR1020090100506A
公开(公告)日：2009-09-24
申请号：KR1020080025719
申请日：2008-03-20
Applicant: 한국화학연구원
CPC classification number: C07F1/08 , B82B3/00 , C07F15/045
Abstract: PURPOSE: A method for manufacturing a metal chalcogenide of nano size using an organic metal complex and chalcogen atom is provided to produce the metal chalcogenide without separate reductant. CONSTITUTION: A method for manufacturing a metal chalcogenide of nano size using an organic metal complex and chacogen atom comprises a step of reacting a metal aminoalkoxide and chalcogenide atom. The metal aminoalkoxide and the chalcogenide are denoted by the chemical formulas 1 and 2 (MaX), respectively. In the chemical formulas 1 and 2, M is transition metal atom, m is 1-3 of integer, R1 to R4 is independently linear or branched alkyl group of C1-C5.
Abstract translation: 目的：提供使用有机金属络合物和硫属原子制造纳米尺寸的金属硫族化物的方法，以制备金属硫属元素化物，而不需要分离的还原剂。 构成：使用有机金属络合物和chacogen原子制造纳米尺寸的金属硫族化物的方法包括使金属氨基烷氧化物和硫族化物原子反应的步骤。 金属氨基烷氧化物和硫族化物分别由化学式1和2（MaX）表示。 在化学式1和化学式2中，M为过渡金属原子，m为整数1-3，R1至R4独立为C1-C5的直链或支链烷基。
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