公开(公告)号：AT368936T

公开(公告)日：2007-08-15

申请号：AT02768458

申请日：2002-08-08

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  LENZ ERIC ,  LI LUMIN

IPC: H01J37/32

Abstract: A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

公开(公告)号：SG130195A1

公开(公告)日：2007-03-20

申请号：SG2007009798

申请日：2004-08-06

Applicant: LAM RES CORP

Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is place (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).

公开(公告)号：DE69825630T2

公开(公告)日：2005-09-15

申请号：DE69825630

申请日：1998-12-11

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  TOKUNAGA KEN ,  SINGH VIKRAM

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

公开(公告)号：DE69733697D1

公开(公告)日：2005-08-11

申请号：DE69733697

申请日：1997-12-18

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  FRANCHUK STEVEN ,  MANZANILLA CARLOS ,  TOKUNAGA E

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/683 ,  H02N13/00 ,  H01L21/00

Abstract: A substrate lifting arrangement for use in a plasma processing chamber having a chuck configured for supporting a substrate during processing of said substrate within said plasma processing chamber, said substrate lifting arrangement comprising: at least one substrate engaging element movable between a first position in which said substrate engaging element does not engage said substrate and a second position in which said substrate engaging element engages said substrate and lifts said substrate off said chuck; an actuator coupled to said substrate engaging element, said actuator controlling movement of said substrate engaging element between said first and second positions; and a resistance arrangement coupled to said substrate engaging element, said resistance arrangement limiting a current flowing from said substrate to ground through said resistance arrangement, said current being caused by remaining electrical charge on said substrate when said substrate is lifted off said chuck by said substrate engaging element; €ƒ€ƒ€ƒ wherein said chuck is an electrostatic chuck; €ƒ€ƒ€ƒ said substrate engaging element includes a plurality of electrically conductive lifting pins supported by a base, said base being supported on an electrically conductive shaft movable between said first and second positions of said substrate engaging element, said shaft being electrically coupled to said ground; and €ƒ€ƒ€ƒ said resistance arrangement being electrically connected between the substrate and the electrically conductive shaft, when the substrate engaging element engages the substrate.

公开(公告)号：AT299293T

公开(公告)日：2005-07-15

申请号：AT97952388

申请日：1997-12-18

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  FRANCHUK STEVEN ,  MANZANILLA CARLOS ,  TOKUNAGA KEN E

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/683 ,  H02N13/00 ,  H01L21/00

Abstract: A substrate lifting arrangement for use in a plasma processing chamber having a chuck configured for supporting a substrate during processing of said substrate within said plasma processing chamber, said substrate lifting arrangement comprising: at least one substrate engaging element movable between a first position in which said substrate engaging element does not engage said substrate and a second position in which said substrate engaging element engages said substrate and lifts said substrate off said chuck; an actuator coupled to said substrate engaging element, said actuator controlling movement of said substrate engaging element between said first and second positions; and a resistance arrangement coupled to said substrate engaging element, said resistance arrangement limiting a current flowing from said substrate to ground through said resistance arrangement, said current being caused by remaining electrical charge on said substrate when said substrate is lifted off said chuck by said substrate engaging element; €ƒ€ƒ€ƒ wherein said chuck is an electrostatic chuck; €ƒ€ƒ€ƒ said substrate engaging element includes a plurality of electrically conductive lifting pins supported by a base, said base being supported on an electrically conductive shaft movable between said first and second positions of said substrate engaging element, said shaft being electrically coupled to said ground; and €ƒ€ƒ€ƒ said resistance arrangement being electrically connected between the substrate and the electrically conductive shaft, when the substrate engaging element engages the substrate.

公开(公告)号：DE69825630D1

公开(公告)日：2004-09-16

申请号：DE69825630

申请日：1998-12-11

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  TOKUNAGA KEN ,  SINGH VIKRAM

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

公开(公告)号：SG10201507919TA

公开(公告)日：2015-10-29

申请号：SG10201507919T

申请日：2008-03-26

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS ,  MORAVEJ MARYAM

Abstract: In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

公开(公告)号：SG10201507508QA

公开(公告)日：2015-10-29

申请号：SG10201507508Q

申请日：2011-09-02

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER

公开(公告)号：SG10201506065YA

公开(公告)日：2015-09-29

申请号：SG10201506065Y

申请日：2011-06-22

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

公开(公告)号：SG10201405469WA

公开(公告)日：2014-10-30

申请号：SG10201405469W

申请日：2010-09-27

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  KALYANARAMAN RAJARAMANAN ,  MANI SATHYANARAYANAN ,  BHATTACHARYYA GUATAM

Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.