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公开(公告)号：KR1020100040482A
公开(公告)日：2010-04-20
申请号：KR1020080099614
申请日：2008-10-10
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/127 , H01L29/0673 , H01L29/66439 , H01L29/772 , Y10S977/959
Abstract: PURPOSE: A method for manufacturing a semiconductor nano-wire sensor device and the semiconductor nano-wire sensor device which is manufactured by the same are provided to form a nano-wire on a bulk semiconductor substrate by performing a lithography process and an epitaxial growth process. CONSTITUTION: A first conductive monocrystalline semiconductor substrate(100) is prepared. A first conductive monocrystalline pattern(102) with a linear shape is formed on the first conductive monocrystalline semiconductor substrate. A second conductive epitaxial pattern is formed on the both sidewall of the first conductive monocrystalline pattern. A source and a drain electrodes are formed on the both end of the second conductive epitaxial patterns. A second conductive epitaxial layer(120) is formed on the first conductive monocrystalline pattern using an epitaxial growth process.
Abstract translation: 目的：提供一种制造半导体纳米线传感器装置的方法和由其制造的半导体纳米线传感器装置，以通过执行光刻工艺和外延生长工艺在体半导体衬底上形成纳米线 。 构成：制备第一导电单晶半导体衬底（100）。 具有直线形状的第一导电单晶图案（102）形成在第一导电单晶半导体衬底上。 在第一导电单晶图案的两个侧壁上形成第二导电外延图案。 源极和漏极形成在第二导电外延图案的两端。 使用外延生长工艺在第一导电单晶图案上形成第二导电外延层（120）。
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公开(公告)号：KR100923947B1
公开(公告)日：2009-10-29
申请号：KR1020070127816
申请日：2007-12-10
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4145 , Y10T436/11
Abstract: 본 발명의 검출 소자는, 검출 커패시터 및 전계효과 트랜지스터를 포함하는데, 상기 검출 커패시터는, 유체 내의 특정 작용기에 반응하는 반응 물질층, 절연층의 양면에 위치한 제1 전극과 제2 전극을 구비하고, 상기 전계효과 트랜지스터는, 상기 제2 전극에 연결되는 소스 전극, 상기 제1 전극에 연결되는 게이트 전극, 드레인 전극을 구비한다. 여기서, 상기 검출 커패시터의 절연층 두께가 상기 전계효과 트랜지스터의 게이트 절연층 보다 더 두꺼운 것을 특징으로 한다.
검출 소자, 바이오 센서, 희석, 전계효과 트랜지스터-
公开(公告)号：KR1020090061340A
公开(公告)日：2009-06-16
申请号：KR1020070128323
申请日：2007-12-11
Applicant: 한국전자통신연구원
IPC: H01L21/336
Abstract: A schottky barrier single electron transistor and a manufacturing method thereof are provided to reduce a size of a quantum dot and to perform operations at a high temperature by preventing a short circuit between a gate electrode and a source/drain through a gate insulation film without use of a side wall insulation film. A source(270a) and a drain(270b) are formed on a substrate(210), and are made of metal silicide. A quantum dot(270c) is formed between the source and the drain. A gate insulation film(240) and a gate electrode(250) are successively formed on a top part of the quantum dot. The gate insulation film blocks short circuit of the gate electrode, the source, the drain, and the quantum dot. The substrate is a SOI(Silicon On Insulator) substrate in which a silicon wafer, a filling oxide film, and a silicon layer are successively formed. The source and the drain form the quantum dot and the schottky barrier.
Abstract translation: 提供了一种肖特基势垒单电子晶体管及其制造方法，以减少量子点的尺寸并通过防止栅极绝缘膜与源极/漏极之间的短路而不使用而在高温下进行操作 的侧壁绝缘膜。 源极（270a）和漏极（270b）形成在衬底（210）上，并且由金属硅化物制成。 在源极和漏极之间形成量子点（270c）。 栅极绝缘膜（240）和栅电极（250）依次形成在量子点的顶部。 栅极绝缘膜阻挡栅电极，源极，漏极和量子点的短路。 衬底是其中连续形成硅晶片，填充氧化物膜和硅层的SOI（绝缘体上硅）衬底。 源极和漏极形成量子点和肖特基势垒。
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公开(公告)号：KR1020090060862A
公开(公告)日：2009-06-15
申请号：KR1020070127816
申请日：2007-12-10
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4145 , Y10T436/11
Abstract: A detection element containing a detection capacitor and transistor, which has excellent durability is provided to easily apply and change and improve the detection function. A detection element comprises a detection capacitor having a reaction material layer(600), a insulating layer(203) comprising a first electrode(403) and second electrode(163); a transistor containing a source electrode(121) which is connected to the second electrode, a gate electrode(401) which is connected to the first electrode, and drain electrode(122). A detection system comprises: a sample storage part in which sample fluid is stored; a solvent storage part in which solvent for diluting the sample is stored; a mixing pipe which mixes sample fluid and solvent; and a detection element for detecting a specific functional group in mixed fluid.
Abstract translation: 提供含有检测电容器和晶体管的检测元件，其具有优异的耐久性，以容易地应用和改变并提高检测功能。 检测元件包括具有反应材料层（600）的检测电容器，包括第一电极（403）和第二电极（163）的绝缘层（203）。 包含连接到第二电极的源电极（121），连接到第一电极的栅电极（401）和漏电极（122）的晶体管。 检测系统包括：样品储存部分，其中存储有样品流体; 其中存储用于稀释样品的溶剂的溶剂储存部分; 混合样品液和溶剂的混合管; 以及用于检测混合流体中的特定官能团的检测元件。
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公开(公告)号：KR100549219B1
公开(公告)日：2006-02-03
申请号：KR1020040024917
申请日：2004-04-12
Applicant: 한국전자통신연구원
IPC: H01L33/02
Abstract: 본 발명은 실리콘 발광소자 및 그 제조방법에 관한 것으로, 실리콘 발광층과 실리콘 발광층에 전압차를 인가하기 위한 전극들을 포함하여 구성된 실리콘 발광소자에 있어서, 실리콘 발광층의 상부와 하부 중 적어도 하나에 실리콘 카본 나이트라이드막을 구비하는 실리콘 발광소자 및 그 제조방법을 제공한다.
실리콘 발광소자, 실리콘 기판, 실리콘 카본 나이트라이드막, 실리콘 발광층-
Patent Agency Ranking
公开(公告)号：KR1020050064646A
公开(公告)日：2005-06-29
申请号：KR1020030096218
申请日：2003-12-24
Applicant: 한국전자통신연구원
IPC: H01L33/10
CPC classification number: H01L33/34 , H01L33/105 , H01L33/24 , H01L33/465
Abstract: 도핑층과 DBR(Distributed Bragg Reflector)을 동시에 채용한 실리콘 발광 소자에 관하여 개시한다. 본 발명에 따른 실리콘 발광 소자는 상호 반대 방향의 제1 면 및 제2 면을 가지는 활성층을 포함한다. 상기 활성층의 제1 면에는 제1 반사부가 대향하고 있고, 상기 활성층의 제2 면에는 제2 반사부가 대향하고 있다. 상기 활성층과 제1 반사부와의 사이에는 제1 도핑층이 개재되어 있고, 상기 활성층과 제2 반사부와의 사이에는 제2 도핑층이 개재되어 있다. 상기 제1 도핑층에 전기적으로 연결 가능한 제1 전극과, 상기 제2 도핑층에 전기적으로 연결 가능한 제2 전극이 형성되어 있다. 상기 제1 반사부 및 제2 반사부 중 적어도 하나는 서로 다른 조성을 가지는 2종의 실리콘함유 절연층이 교대로 적층되어 있는 DBR과 게이트를 포함한다.
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公开(公告)号：KR1020030062078A
公开(公告)日：2003-07-23
申请号：KR1020020002499
申请日：2002-01-16
Applicant: 한국전자통신연구원
IPC: G11B7/1365
Abstract: PURPOSE: An optical recording head using a birefringent material is provided to increase depth of focus more than depth of focus formed by one focus, thereby easily controlling a focus without increasing the accuracy of a focus servo. CONSTITUTION: A solid immersion lens(204) is provided. A laser diode(201) generates an incident beam to be projected to the solid immersion lens. A polarizing beam splitter(202) is installed between the laser diode and the solid immersion lens. A photo diode(206) forms bits on a storage medium(205) through a birefringent optical element(209), a condenser(203), and the solid immersion lens. The photo diode detects a bit signal and a focus control signal through a signal light. A focus of a vertical polarized light(210) and a focus of a horizontal polarized light(211) are formed at different positions on an optical axis(201a), so that depth of focus is increased.
Abstract translation: 目的：提供使用双折射材料的光学记录头，以增加焦点的深度，而不是增加聚焦伺服的精度，从而容易地控制聚焦的聚焦深度。 构成：提供固体浸没透镜（204）。 激光二极管（201）产生投射到固体浸没透镜的入射光束。 偏振分束器（202）安装在激光二极管和固体浸没透镜之间。 光电二极管（206）通过双折射光学元件（209），冷凝器（203）和固体浸没透镜在存储介质（205）上形成位。 光电二极管通过信号光检测位信号和聚焦控制信号。 垂直偏振光（210）的焦点和水平偏振光（211）的焦点形成在光轴（201a）上的不同位置，从而增加了焦深。
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公开(公告)号：KR100392255B1
公开(公告)日：2003-07-23
申请号：KR1020000080801
申请日：2000-12-22
Applicant: 한국전자통신연구원
IPC: G11B7/124 , G11B7/1374 , G11B7/1353 , G11B7/1387
Abstract: PURPOSE: A micro near-field optical data storage head using an SIL(Solid Immersion Lens) is provided to use the SIL for a big size lens, and to use diffraction elements for the rest parts, thereby minimizing the size. CONSTITUTION: An optical waveguide(201) has a plane shape. At least more than one condensing diffraction grating(203) is attached to one of both sides of the optical waveguide, and changes a path of an incident light(202) to an SIL(205). More than one optical division diffraction grating(210) is located between a light source and the condensing diffraction grating, and changes a path of a signal light(209). The SIL is composed of a curved part and a plane part, and concentrates the incident light on one point of the plane part. A coil(206) is attached to an option position of an optical storage head, and generates a magnetic field. The curved part of the SIL is formed on a sphere, hemisphere, or super-hemisphere, to make the incident light diffracted by the condensing diffraction grating form an optical point less than diffraction limits.
Abstract translation: 目的：提供使用SIL（固体浸没透镜）的微型近场光学数据存储头，以将SIL用于大尺寸透镜，并将衍射元件用于其余部分，从而使尺寸最小化。 构成：光波导（201）具有平面形状。 至少多于一个聚光衍射光栅（203）附着到光波导的两侧中的一侧，并且将入射光（202）的路径改变为SIL（205）。 不止一个光学分割衍射光栅（210）位于光源和聚光衍射光栅之间，并且改变信号光的路径（209）。 SIL由弯曲部分和平面部分组成，并将入射光集中在平面部分的一个点上。 线圈（206）附接到光存储头的选项位置，并产生磁场。 SIL的弯曲部分形成在球体，半球或超半球上，以使由聚光衍射光栅衍射的入射光形成小于衍射极限的光点。
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公开(公告)号：KR1020030054760A
公开(公告)日：2003-07-02
申请号：KR1020010085167
申请日：2001-12-26
Applicant: 한국전자통신연구원
IPC: G01B11/14
Abstract: PURPOSE: A gap measuring apparatus for a solid immersion lens is provided to easily measure a gap formed between a storage medium and the solid immersion lens by detecting a distribution of interference signals. CONSTITUTION: A gap measuring apparatus includes a refracting device(201), and a light detecting device(202). The refracting device(201) allows internal total-reflection light(204) reflected from a lower plane(104a) of a solid immersion lens and transmission light(205) reflected from a surface of a storage medium(105) to be focused at one spot. The light detecting device(202) detects a light intensity distribution of an interference signal generated by the refracting device(201). The refracting device(201) includes at a refractive optical device having at least one lens. The light detecting device(202) includes photoelectronic device or a charge coupled device.
Abstract translation: 目的：提供一种用于固体浸没透镜的间隙测量装置，用于通过检测干涉信号的分布来容易地测量形成在存储介质和固体浸没透镜之间的间隙。 构成：间隙测量装置包括折射装置（201）和光检测装置（202）。 折射装置（201）允许从固体浸没透镜的下平面（104a）反射的内部全反射光（204）和从存储介质（105）的表面反射的透射光（205）聚焦在一个 点。 光检测装置（202）检测由折射装置（201）产生的干涉信号的光强度分布。 折射装置（201）包括具有至少一个透镜的折射光学装置。 光检测装置（202）包括光电子器件或电荷耦合器件。
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公开(公告)号：KR100388060B1
公开(公告)日：2003-06-18
申请号：KR1020000080800
申请日：2000-12-22
Applicant: 한국전자통신연구원
IPC: G11B7/124 , G11B7/1353 , G11B7/1387
Abstract: PURPOSE: An optical data storage device using an SIL(Solid Immersion Lens) and a waveguide diffraction grating coupler is provided to install an optical storage head device combining the waveguide diffraction grating coupler with the SIL and a cartridge, and to use an optical fiber for inducing light, thereby obtaining high storage density without polluting a head of an optical storage device and a storage medium. CONSTITUTION: A recording medium(101) rotates on the basis of the first rotation hub in a cartridge. One end of a rotary arm(102) is fixed into the second rotation hub in the cartridge. A flying head(104) is attached to a free end of the rotary arm, and writes data on the recording medium or reads the data from the recording medium. An optical waveguide is installed up to outside of the cartridge from the flying head. The rotary arm rotates within an angle where the rotary arm is capable of guiding the flying head up to an utmost inner track from an utmost outer track of the cartridge.
Abstract translation: 目的：提供一种使用SIL（固体浸没透镜）和波导衍射光栅耦合器的光学数据存储装置，用于安装将波导衍射光栅耦合器与SIL和盒子组合在一起的光学存储头装置，并且使用用于 诱导光，从而获得高存储密度而不会污染光学存储装置和存储介质的头部。 构成：记录介质（101）以盒中的第一旋转毂为基础旋转。 旋转臂（102）的一端固定在盒中的第二旋转毂内。 飞行头（104）连接在旋转臂的自由端上，并将数据写入记录介质或从记录介质读取数据。 光学波导从飞行头安装到盒的外部。 旋转臂在一定角度内旋转，其中旋转臂能够从盒的最外部轨道将飞行头引导至最内部的轨道。
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