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公开(公告)号：KR1020130081070A
公开(公告)日：2013-07-16
申请号：KR1020120002040
申请日：2012-01-06
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: H01L27/14603
Abstract: PURPOSE: A detector with a large area and a manufacturing method thereof are provided to maximize an effective area by forming the width of a selection and driving line below the width of one pixel. CONSTITUTION: A pixel region (36) is formed between first areas (32). The pixel region includes a plurality of pixels. The pixel region includes second areas (34) which are vertical to the first areas. The first area includes a peripheral circuit part. The second area includes a driving line.
Abstract translation: 目的：提供具有大面积的检测器及其制造方法，以通过将选择和驱动线的宽度形成在一个像素的宽度以下来最大化有效面积。 构成：在第一区域（32）之间形成像素区域（36）。 像素区域包括多个像素。 像素区域包括垂直于第一区域的第二区域（34）。 第一区域包括外围电路部分。 第二个区域包括一条行车线。
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公开(公告)号：KR101270172B1
公开(公告)日：2013-05-31
申请号：KR1020070087307
申请日：2007-08-29
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02581 , H01L29/78696
Abstract: 본발명은산화물박막트랜지스터및 그제조방법에관한것이다. 산화물박막트랜지스터에있어서, 게이트; 상기게이트에대응되는위치에연속적으로형성된채널및 상기채널보다높은일함수를지닌캐핑층; 상기게이트및 채널사이에형성되는게이트절연체; 및상기캐핑층의양측부와각각접촉하며형성된소스및 드레인을포함하는산화물박막트랜지스터를제공한다.
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公开(公告)号：KR1020130032644A
公开(公告)日：2013-04-02
申请号：KR1020110096371
申请日：2011-09-23
IPC: A61B6/12 , H01L27/148
Abstract: PURPOSE: An image sensor and an X-ray image sensing module with the same are provided to obtain high quality X-ray digital images by applying a CDS(Correlation Double Sampling) method to each of single pixels which are operated mutually and asynchronously. CONSTITUTION: A charge sensing amplifier(200) amplifies electric charges detected by a detector(110). The charge sensing amplifier includes a first capacitor(C1), a first switching unit(SW1), a second capacitor(C2), and a second switching unit(SW2). The first capacitor is connected between an input terminal and an amplification terminal. The first switching unit is connected between the input terminal and the amplification terminal. The second capacitor is connected between the amplification terminal and an output terminal. The second switching unit is connected between the output terminal and a reference voltage terminal. [Reference numerals] (110) Detector; (210) Amplifier; (220) Delay unit;
Abstract translation: 目的：提供一种图像传感器和具有该图像传感器的X射线图像感测模块，以通过将CDS（相关双倍采样）方法应用于相互和异步操作的每个单个像素来获得高质量的X射线数字图像。 构成：电荷感测放大器（200）放大由检测器（110）检测的电荷。 电荷感测放大器包括第一电容器（C1），第一开关单元（SW1），第二电容器（C2）和第二开关单元（SW2）。 第一电容器连接在输入端子和放大端子之间。 第一开关单元连接在输入端子和放大端子之间。 第二电容器连接在放大端子和输出端子之间。 第二开关单元连接在输出端子和参考电压端子之间。 （附图标记）（110）检测器; （210）放大器; （220）延迟单位;
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公开(公告)号：KR1020120084079A
公开(公告)日：2012-07-27
申请号：KR1020110005388
申请日：2011-01-19
Applicant: 삼성전자주식회사
CPC classification number: H01L51/441 , Y02E10/549 , Y02P70/521
Abstract: PURPOSE: Paste for a photoelectric conversion layer and a method for manufacturing an X-ray detector using the same are provided to increase the sensitivity of a thin film by efficiently dispersing photo conductive particles. CONSTITUTION: Paste for a photoelectric conversion layer includes photoconductive particles, an organic polymer binder, a first organic solvent, and a second organic solvent. The first organic solvent is capable of melting the organic polymer binder. The boiling point of the second organic solvent is in a range between 150 and 210 degrees Celsius. The photoconductive particles include HgI_2, PbI_2, BiI_3, TlBr, PbO, CdTe, CdZnTe, or the mixture of the same. The organic polymer binder includes a poly(vinyl butyral) resin, an acrylic resin, a phenoxy resin, a polyester resin, a poly(vinyl formal) resin, a polyamide resin, a polystyrene resin, a polycarbonate resin, a poly(vinyl acetate) resin, a polyurethane resin, an epoxy resin, or the mixture of the same. The first organic solvent includes dipropylene glycol methyl ether, butyl cellosolve, or the mixture of the same. The second organic solvent includes butyl cellosolve acetate, kocosol, butyl cellosolve, ethyl-3-ethoxypropionate, or the mixture of the same.
Abstract translation: 目的：提供用于光电转换层的粘合剂和使用其的用于制造X射线检测器的方法，以通过有效地分散光导颗粒来提高薄膜的灵敏度。 构成：用于光电转换层的浆料包括光电导颗粒，有机聚合物粘合剂，第一有机溶剂和第二有机溶剂。 第一有机溶剂能够熔化有机聚合物粘合剂。 第二有机溶剂的沸点在150至210摄氏度的范围内。 光电导颗粒包括HgI_2，PbI_2，BiI_3，TlBr，PbO，CdTe，CdZnTe或其混合物。 有机聚合物粘合剂包括聚（乙烯醇缩丁醛）树脂，丙烯酸树脂，苯氧基树脂，聚酯树脂，聚（乙烯基缩甲醛）树脂，聚酰胺树脂，聚苯乙烯树脂，聚碳酸酯树脂，聚（乙酸乙烯酯 ）树脂，聚氨酯树脂，环氧树脂或其混合物。 第一种有机溶剂包括二丙二醇甲基醚，丁基溶纤剂或其混合物。 第二种有机溶剂包括丁基溶纤剂乙酸酯，考昔胶，丁基溶纤剂，3-乙氧基丙酸乙酯或它们的混合物。
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公开(公告)号：KR101148829B1
公开(公告)日：2012-05-29
申请号：KR1020080104272
申请日：2008-10-23
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/136
Abstract: 박막 트랜지스터에 관해 개시되어 있다. 개시된 본 발명은 게이트, 상기 게이트에 접촉된 게이트 절연층, 상기 게이트 절연층과 접촉되고 상기 게이트 절연층을 사이에 두고 상기 게이트와 마주하는 채널층, 상기 채널층의 일단에 접촉된 소오스 및 상기 채널층의 타단에 접촉된 드레인을 포함하되, 상기 채널층은 비정질 산화물 반도체층이고, 상기 소오스 및 드레인은 전도성 산화물층과 저저항 금속층을 포함하여 형성된 박막 트랜지스터를 제공한다.
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Patent Agency Ranking
公开(公告)号：KR1020120049720A
公开(公告)日：2012-05-17
申请号：KR1020100111121
申请日：2010-11-09
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: G09G3/30
CPC classification number: G09G3/3233 , G09G2300/0842 , G09G2310/0251 , G09G3/30 , G09G3/32
Abstract: PURPOSE: A driving method of an active type display device is provided to recover threshold voltage of a thin film transistor by applying negative bias voltage to a drain electrode of a switching transistor. CONSTITUTION: A switching transistor is connected to a pixel. Negative bias voltage is applied to the switching transistor. The negative bias voltage is applied before charging each pixel. Threshold voltage of the switching transistor is recovered. The negative bias voltage is applied to a drain electrode of the switching transistor.
Abstract translation: 目的：提供一种有源型显示装置的驱动方法，通过向开关晶体管的漏极施加负偏置电压来恢复薄膜晶体管的阈值电压。 构成：开关晶体管连接到像素。 负偏置电压施加到开关晶体管。 在对每个像素充电之前施加负偏压。 恢复开关晶体管的阈值电压。 负偏压施加到开关晶体管的漏电极。
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公开(公告)号：KR1020110123116A
公开(公告)日：2011-11-14
申请号：KR1020100042587
申请日：2010-05-06
Applicant: 삼성전자주식회사
IPC: G06F3/042
CPC classification number: G02F1/13338 , G02F1/1368 , G06F3/0412 , G06F3/042 , H01L27/1225
Abstract: PURPOSE: An optical touch panel and a method for fabricating the same are provided to easily control a large display device using a simple light source. CONSTITUTION: A first and a second gate patterns(101,110) are arranged on a substrate. A gate insulation film(102) covers the substrate and the first and the second gate patterns. A first channel film(103) is partly arranged on the gate insulation film in order to face the first gate pattern. A second channel film(104) is partly arranged on the gate insulation film in order to face the second gate pattern. A source/drain pattern(105) is arranged both sides of the first and the second channel film. A transparent insulation layer(106) covers the source/drain pattern and the first and the second channel film.
Abstract translation: 目的：提供一种光学触摸面板及其制造方法，以容易地使用简单的光源控制大型显示装置。 构成：在衬底上布置第一和第二栅极图案（101,110）。 栅极绝缘膜（102）覆盖基板和第一和第二栅极图案。 第一通道膜（103）部分地布置在栅极绝缘膜上以面对第一栅极图案。 为了面对第二栅极图案，第二沟道膜（104）部分地布置在栅极绝缘膜上。 源极/漏极图案（105）布置在第一和第二通道膜的两侧。 透明绝缘层（106）覆盖源极/漏极图案以及第一和第二沟道膜。
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公开(公告)号：KR1020100138586A
公开(公告)日：2010-12-31
申请号：KR1020090057179
申请日：2009-06-25
Applicant: 삼성전자주식회사
CPC classification number: G06F21/74 , G06F12/1491
Abstract: 본발명의반도체장치의액세스제어방법은, 입력된패스워드를해쉬연산기의입력으로제공하고, 해쉬연산기에서해쉬연산을수행하여제1 해쉬값을출력하고, 제1 해쉬값및 불휘발성메모리에저장된제2 해쉬값이일치하지않을때 상기제1 해쉬값을상기해쉬연산기의입력으로제공하여해쉬연산기에서상기해쉬연산을반복수행하도록제어하고, 그리고제1 및제2 해쉬값들이일치할때 해쉬연산기의해쉬연산의반복횟수에따라서내부회로에대한액세스레벨을설정한다.
Abstract translation: 目的：提供具有多重访问级别及其访问控制方法的半导体器件，以通过输入密码来限制访问范围。 构成：散列算子（330）输出第一个散列值。 非易失性存储器（310）存储第二哈希值。 安全JTAG（联合测试动作组）控制器（320）提供从外部输入的密码作为散列算子的输入。 当从散列算子输出的第一哈希值与保存在非易失性存储器中的第二哈希值相同时，安全JTAG控制器通过散列操作的重复频率设置关于内部电路的访问级别。
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公开(公告)号：KR1020100135049A
公开(公告)日：2010-12-24
申请号：KR1020090053494
申请日：2009-06-16
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: PURPOSE: By providing the exact model parameter which a method and apparatus for producing the electrical characteristic of the amorphous semiconductor T F T can be used for the simulation for the amorphous semiconductor TFT. CONSTITUTION: The light is examined in the amorphous semiconductor TFT and the light response characteristics of C-V is measured at(110). The electric capacity of the case of examining the light and the case which does not examine the light is calculated and it is modelled to the function of C-V(120).
Abstract translation: 目的：通过提供用于制造非晶半导体T F T的电特性的方法和装置可用于非晶半导体TFT的模拟的精确模型参数。 构成：在非晶半导体TFT中检查光，并且在（110）处测量C-V的光响应特性。 计算检查光的情况下的电容量和不检查光的情况，并根据C-V（120）的功能进行建模。
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公开(公告)号：KR1020100061064A
公开(公告)日：2010-06-07
申请号：KR1020080119942
申请日：2008-11-28
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L27/1225 , H01L21/8238 , H01L27/092 , H01L27/1251
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily form as a low-temperature process by forming a first oxide channel layer and a second oxide channel layer into an oxide. CONSTITUTION: A first thin film transistor includes a first source(S10), a first drain, a first channel layer, and a first gate. A second thin film transistor includes a second source(S20), a second drain, a second channel layer, and a second gate. One is a p-type oxide layer among the first and the second channel layer. The first and the second thin film transistor is a bottom gate(BG10, BG20) structure or a top gate structure. One is a dual gate including more other gates among the first and the second thin film transistor at least.
Abstract translation: 目的：通过将第一氧化物沟道层和第二氧化物沟道层形成为氧化物，提供半导体器件及其制造方法以容易地形成为低温工艺。 构成：第一薄膜晶体管包括第一源（S10），第一漏极，第一沟道层和第一栅极。 第二薄膜晶体管包括第二源（S20），第二漏极，第二沟道层和第二栅极。 一个是第一和第二沟道层中的p型氧化物层。 第一和第二薄膜晶体管是底栅（BG10，BG20）结构或顶栅结构。 一个是至少包括第一和第二薄膜晶体管中的更多其它栅极的双栅极。
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