Abstract:
The present invention relates to a printed circuit board and a method for manufacturing the same. Disclosed are the printed circuit board for a thinner and densified board, which comprises: a core layer having a first circuit line layer on one side or both sides; an insulation layer laminated on one side or both sides of the core layer by one or more layer; and a second circuit line layer formed on one side of the insulation layer, but comprising a conductive core inside the upper and lower parts of the insulation layer joined to the second circuit line layer requiring an electromagnetic shield, or comprising a conductive core inside the insulation layer inside the core layer joined to the first circuit line layer requiring an electromagnetic shield, and a method for manufacturing the same.
Abstract:
A method for manufacturing a substrate is provided to improve adhesion between the substrate and a wiring layer by etching a conductive layer formed in a surface of the substrate with a predetermined pattern. A penetration hole(18) is formed in a substrate(16). A penetration hole is a pilot hole. A plated through hole is passed through the plated through hole. The plating is performed in the substrate. An inner wall of the penetration hole is coated with a plating layer(19). A photoresist is laminated in the surface of the substrate. The photoresist is exposed and developed. A resist pattern(72) is formed. The resist pattern covers at least planar region of the penetration hole. A conductive layer is formed in the surface of the substrate and is etched. The conductive layer is etched. The resist pattern is used as a mask. The substrate includes a conductive core unit(10).
Abstract:
본 발명은 액적 토출 장치를 이용하여 비어 홀을 구비한 다층 구조를 형성하는 것을 과제로 한다. 다층 구조 형성 방법이 도전성 재료의 액적을 토출하여 물체 표면 위에 도전성 재료 패턴을 형성하는 스텝과, 상기 도전성 재료 패턴을 소성하여 배선 패턴을 형성하는 스텝과, 광경화성 재료를 포함하는 제 1 절연 재료의 액적을 토출하여, 상기 배선 패턴 위에서 비어 홀의 가장자리를 두르는 제 1 절연 재료 패턴을 형성하는 스텝과, 상기 제 1 절연 재료 패턴을 경화하여 비어 홀의 가장자리를 두르는 제 1 절연 패턴을 형성하는 스텝과, 상기 물체 표면을 친액화하는 스텝과, 광경화성 재료를 포함하는 제 2 절연 재료의 액적을 토출하여 상기 배선 패턴과 친액화된 상기 물체 표면을 덮는 동시에, 상기 제 1 절연 패턴을 둘러싸는 제 2 절연 재료 패턴을 형성하는 스텝과, 상기 제 2 절연 재료 패턴을 경화하여 상기 제 1 절연 패턴을 둘러싸는 제 2 절연 패턴을 형성하는 스텝을 포함한다. 다층 구조 형성 방법, 액적 토출 장치, 절연 재료, 도전성 재료, 광경화성 재료, 배선 기판 제조 방법.
Abstract:
Copolymers of diglycidyl ether terminated polysiloxane compounds and non-aromatic polyamines are used in the preparation of dielectric materials for electroless metal plating. The copolymers may be used in the manufacture of printed circuit boards such as in cleaning and conditioning through-holes prior to electroless metallization.
Abstract:
Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.
Abstract:
A multilayer wiring plate includes a coaxial wire includes a signal line, an insulation coating and an outer peripheral conductor. An insulating layer is arranged on an inner or outer layer side. A metal film circuit is arranged by the intermediary of the insulating layer, and the metal film circuit and the outer peripheral conductor and signal line of the coaxial wire are connected. A signal line connection part that connects the signal line to the metal film circuit includes a penetration hole A that passes through the insulating layer and the outer peripheral conductor; the coaxial wire from which the outer peripheral conductor is removed inside the penetration hole A; a hole filling resin filled inside the penetration hole A; a penetration hole B that passes through the hole filling resin and the signal line; and a plated layer arranged on an inner wall of the penetration hole B.
Abstract:
In some embodiments, a carrier substrate for an integrated circuit may include a core, a first plurality of openings, and a first insulating material. The core may include a first surface and a second surface substantially opposing the first surface. The first plurality of openings may extend from the first surface to the second surface of the core. In some embodiments, the first insulating material may be applied to a surface of the first plurality of openings. In some embodiments, the first plurality of openings may include a first conductor extending through each of the first plurality of openings from the first surface to the second surface. In some embodiments, at least a first subset of the first plurality of openings may include a first charge and at least a second subset of the first plurality of openings may include a second charge. The first charge and the second charge may be different.
Abstract:
In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.
Abstract:
In a manufacturing method of a package carrier, a substrate having an upper surface, a lower surface, and an opening communicating the two surfaces is provided. An electronic device is disposed inside the opening. A first insulation layer and a superimposed first metal layer are laminated on the upper surface; a second insulation layer and a superimposed second metal layer are laminated on the lower surface. The opening is filled with the first and second insulation layers. First blind holes, second blind holes, and a heat-dissipation channel are formed. A third metal layer is formed on the first and second blind holes and an inner wall of the heat-dissipation channel. A heat-conducting device is disposed inside the heat-dissipation channel and fixed into the heat-dissipation channel via an insulation material. The first and second metal layers are patterned to form a first patterned metal layer and a second patterned metal layer.