公开(公告)号：JPH06310496A

公开(公告)日：1994-11-04

申请号：JP7595694

申请日：1994-04-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU SATOSHI ,  GU CHINKON

IPC: H01L21/31 ,  B05C11/08 ,  H01L21/027 ,  H01L21/28 ,  H01L21/316

Abstract: PURPOSE: To uniformly coat a planarizing material on the entire surface of a wafer being rotated. CONSTITUTION: During rotating of a fixing plate by the rotating force of a motor, an SOG material is coated on a wafer with feeding a thermal energy on the marginal face of the wafer. The thermal energy reduces the viscosity coefficient of the SOG material during rotating at the edge of the wafer 11 being heated by this energy and hence the surface tension near the edge reduces to thereby coat the SOG material at a uniform thickness.

公开(公告)号：JPH06244451A

公开(公告)日：1994-09-02

申请号：JP31815793

申请日：1993-12-17

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RIYUU SHIHAN ,  BOKU SANYUU ,  KIN KOUBAN

IPC: H01L31/0352 ,  H01L31/107

Abstract: PURPOSE: To prevent unevenness and a decrease in steepness of a hetero-junction boundary surface, to reduce dark current due to tunneling, and to make an internal gain large by using an InAlAs/InGaAs superlattice structure as an amplification layer. CONSTITUTION: On an n -InP epitaxial layer 11 formed as a buffer layer on a substrate 10, an n-type InAlAs layer 12 is formed, and an it, an n -InAlAs layer 13 is formed while being relatively high in impurity density. On this layer 13, aon amplification layer 14 is further formed which has an InGaAs/InAlAs superlattice structure. On the amplification layer 14, p-type InAlAs layers 15 and 16, an absorption layer 17 of InGaAs, a p-type InP layer 18 for reducing the quantity of a surface leakage current, and an InGaAs layer 19 for ohmic junction are successively formed in order. Consequently, an epitaxial layer having high quality and accurate thickness and density is grown.

公开(公告)号：JPH06237289A

公开(公告)日：1994-08-23

申请号：JP35275693

申请日：1993-12-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN EIKA ,  RO HEIKEI ,  TEI SHIYOUKUN ,  IN SAIU ,  TEI KIYOUITSU ,  BOKU MITSUHIRO

IPC: G01R23/10 ,  H04M1/24

Abstract: PURPOSE: To detect fine frequency deviation that is induced by a transmission channel by making a deviation detecting method for a fine frequency include a 1st stage that decides a measuring cycle, through a 5th stage that decides a final frequency deviation value. CONSTITUTION: In this method, a basic cycle is detected first to decide a measuring cycle in a 1st stage 31. Next in a 2nd stage 32, normalization processing is performed, based on the basic cycle that is detected in a 1st stage. Then, in a 3rd stage 33, only the signal value of an object to be calculated is selected from signal values of the basic cycle and the measuring cycle. In 4th stages 34 and 35, the code or direction of frequency deviation is decided 35 by calculating 34 the absolute value of frequency deviation from the signal value of the object to be calculated. Finally, in a 5th stage 36, a final frequency deviation value is decided according to the code that is decided from the absolute value of the frequency deviation. Fine frequency deviation that is induced on a transmission channel can be detected through these stages.

公开(公告)号：JPH06222290A

公开(公告)日：1994-08-12

申请号：JP28152693

申请日：1993-11-10

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU GIYONRIYUU ,  BOKU SHINSHIYOU ,  KIN TOUKIYUU ,  IN KIYOUCHIN ,  BOKU TETSUJIYUN ,  SOU BINKEI

IPC: G02F3/00 ,  B81B3/00 ,  C03C17/36 ,  G02B26/02 ,  G02B27/00 ,  G09F9/37 ,  G09G3/20

Abstract: PURPOSE: To provide a fine pixel plane display which can represent static or dynamic video by using an optical switch, utilizing an electrostatic microactuator manufactured only by a semiconductor process. CONSTITUTION: A shutter-moving element 14 at an arbitrary position in a frame 15 is electrostatically charged in a belt-like shape by applying a select electrode 3 and a signal electrode 2 with voltages which are respectively higher and lower than the voltage of a common electrode 4. When an equilibrium state is reached, the voltage applied to the select line is inverted in polarity, in order and then the electric charges of the select electrode 3 change momentarily, but electric charges which accumulated on the side of the moving element 14 are unable to migrate immediately because of disturbance by the resistance. Consequently, a driving for which moves the moving element 14 to the right is generated, together with a repulsive force between the moving element 14 and select electrode 3, so that the shutter-moving element 14 moves to the right side.

公开(公告)号：JPH0642490B2

公开(公告)日：1994-06-01

申请号：JP31400188

申请日：1988-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YU HIYON KIYU ,  KAN SAN UON ,  I JIN HIYO

IPC: H01L29/73 ,  H01L21/203 ,  H01L21/225 ,  H01L21/263 ,  H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/331 ,  H01L29/08 ,  H01L29/68 ,  H01L29/732

公开(公告)号：JPH0645361A

公开(公告)日：1994-02-18

申请号：JP34486191

申请日：1991-12-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU TETSUJIYUN ,  CHIN KIKAN ,  MOU SEIZAI ,  YOU TENKIYOKU ,  SAI EIKEI ,  KIYOU CHINEI ,  RI KEIKOU ,  RI SHINHI ,  KIN DOUCHIN

IPC: H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/285 ,  H01L21/338 ,  H01L29/812

Abstract: PURPOSE: To allow silicon ions within an evaporated silicon thin film to the diffused into a substrate, even by implanting small amounts of low-energy ions and by heat treatment. CONSTITUTION: A method of manufacturing a GaAs metal-semiconductor field effect transistor involves the steps of: forming a silicon layer 2 on a GaAs substrate 1, forming a first photoresist pattern 3 on the silicon layer 2 using a known image inversion method to define an ohmic contact for source/drain electrodes and etching a silicon layer portion excluding the ohmic contact using photolithography, defining a channel region by forming a second photoresist pattern 4 on the substrate 1 after the first photoresist pattern 3 has been removed, and forming a channel region 5 by implanting a prescribed amount of silicon ions Si into the substrate 1, using the second photoresist pattern 4 as a mask.

公开(公告)号：JPH0621099A

公开(公告)日：1994-01-28

申请号：JP34420292

申请日：1992-12-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KEIKOU ,  CHIYOU KOUYOKU ,  RI YUUTAKU

IPC: H01L29/812 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/338

Abstract: PURPOSE: To provide a manufacturing method of MESFET for improving operating characteristics by lowering the contact resistance of an ohmic electrode and gating a metal of similarly low specific resistance, in spite of its heat resistance. CONSTITUTION: A silicon membrane 202 is formed on a semi-insulated semiconductor wafer 201, and after a channel region has been defined on a photosensitive film 203, an n-type impurity is injected into primary ions. After an ohmic electrode junction region is defined on a photosensitive film 203a by n - lithography for high-density doping, secondary ion implantation is performed. The photosensitive film 203a and the silicon membrane 202 are successively removed, and after the pattern of the ohmic electrode has been formed by the photosensitive film for the photolithography of a mask for the ohmic electrode, a damaged region is removed by performing recess etching of a wafer surface so that a gate can be formed. After a pattern has been formed for lithography for using the mask for the gate, a step is included for forming the gate by removing the damaged region by performing the recess etching of the wafer surface.

公开(公告)号：JPH0620908A

公开(公告)日：1994-01-28

申请号：JP34484891

申请日：1991-12-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIYOUGEN ,  KIN JIYUNTAI ,  KIN HOYUU

IPC: B23Q1/00 ,  B23Q1/34 ,  B23Q1/36 ,  B23Q5/22 ,  B23Q5/28 ,  B23Q5/34 ,  G03F7/20 ,  G03F7/22 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  H01L41/09 ,  B23Q1/02

Abstract: PURPOSE: To eliminate measurement errors generated by an increase in height with changing displacement in a vertical direction by performing rotation in the vertical direction with the expansion displacement of an expansion part, enlarging the displacement and providing upper/lower direction and tilt driving device provided with a driving part for performing driving, linked with the rotation operation of a displacement-enlarging piece. CONSTITUTION: A roller 22 for upper/lower direction and tilt-driving transmits the enlarged displacement of an actuator to a vacuum chuck 6 in the vertical direction. Thus, it is turned to a driving point for the upper/lower direction and tilt driving device (A). Also, it is utilized as a guiding element for the rotation direction 27 of the roller for the upper/lower direction and tilt driving, and a roller supporting base 24 causes rotation movement along the structure of a circular V-groove 28. That is, the roller 22 for the upper/lower direction and tilt is rotated along the structure of the circular V-groove 28, and the rotation in a horizontal direction is enabled, without generating the displacement of the upper/lower direction and tilt.

公开(公告)号：JPH0522274A

公开(公告)日：1993-01-29

申请号：JP17910291

申请日：1991-07-19

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： RI BUMUCHIYORU ,  BOKU KUONCHIYORU

IPC: G01R25/04 ,  H03K5/00 ,  H03K5/26 ,  H04L7/02

Abstract: PURPOSE: To produce a phase detector which infinitely operates to inputted data bit rate and from which outputted phase information is outputted in a state where it is easily matched with a digital circuit. CONSTITUTION: This detector is provided with D flip flops U1 and U3 for inputting NRZ data, a receiver U4 for inputting a clock pulse CP which executes re-timing, a D flip flop U2 for inputting the output of U1, an exclusive OR and NOR gate U5 and an exclusive NOR gate U6.

公开(公告)号：JPH0368294A

公开(公告)日：1991-03-25

申请号：JP13865290

申请日：1990-05-30

Applicant: KOREA ELECTRONICS TELECOMM ,  KORIA TELECOMMUN OOSORITEII

Inventor： YON SUU RII ,  OO UUKU KUON ,  YOO HON JIYUN ,  I HON KIMU ,  MIYON HORII

IPC: G06F15/167 ,  G06T11/60 ,  H04M9/00 ,  H04N5/907 ,  H04N7/14 ,  H04N7/50

Abstract: PURPOSE: To improve videophone performance by additionally providing a shared memory means which is connected to a VME bus and an image bus so as to execute a message keeping function for synchronization and communication between processing elements, etc. CONSTITUTION: A source CODEC part 25 divides an image encoding function so as to process a part of it by correspondence and input data is inputted from an adjacent processing element through a frame memory part 23, a shared memory part 24 or a pipeline. The processing result is transmitted to the succeeding adjacent processing element through the pipeline or transmitted to the processing element which is not adjacent through the shared memory part 24 and reduced final image information is transmitted to a TX buffer 26 and transmitted to a network connecting part 27. When an image compounding function is executed, the input from the RX buffer 26 is processed and the final compounded image is transmitted to the frame memory part 23.