Abstract:
A multi charged particle beam writing apparatus includes an aperture member to form multiple beams, a blanking plate in which there are arranged a plurality of blankers to respectively perform blanking deflection for a corresponding beam in the multiple beams having passed through a plurality of openings of the aperture member, a blanking aperture member to block each beam having been deflected to be in OFF state by at least one of the plurality of blankers, a first grating lens, using the aperture member as gratings, to correct spherical aberration of the charged particle beam, and a correction lens configured to correct high order spherical aberration produced by the first grating lens.
Abstract:
A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the “on” state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.
Abstract:
A particle beam system includes a charged particle beam source, a beam blanking module connectable to a data network, a focusing lens, a first beam deflection module connectable to the data network, a calculation module configured to determine a deflection time; and an encoding module.
Abstract:
When a time-of-flight mass selector having a chopper using a deflector selects the masses of the ions, an ion beam is deflected. As a result, at least a part of the ion beams diagonally pass through an aperture electrode with respect to the axis. Accordingly, there has been a problem that a position on an object irradiated with a cluster ion beam, results in moving. This mass selector includes: a flight tube having an equipotential space that makes a charged substance fly therein; a deflector that is installed in a downstream side with respect to the flight tube in a direction in which the charged substance flies; a first aperture electrode that is installed in a downstream side with respect to the deflector in a direction in which the charged substance flies; and a second aperture electrode that is installed in between the deflector and the first aperture electrode.
Abstract:
An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.
Abstract:
An apparatus for use with an electron beam for imaging a sample. The apparatus has a down-conversion detector configured to detect an electron microscopy signal generated by the electron beam incident on the sample, a direct bombardment detector adjacent to the down-conversion detector and configured to detect the electron microscopy signal, and a mechanism selectively exposing the down-conversion detector and the direct bombardment detector to the electron microscopy signal. A method using the apparatus is also provided.
Abstract:
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
Abstract:
A blanking deflector 23 is of the coaxial type and includes a rod-like inner electrode 231 and a cylindrical outer electrode 232 enclosing the inner electrode 231 such that an air gap through which the charged particle beam B passes is formed between the inner and outer electrodes 231 and 232. The inner electrode 231 and the outer electrode 232 are formed by forming electrode films 231b and 232b of a metal over the surfaces of nonconducting base materials 231a and 232a, respectively, by vacuum deposition or sputtering. Further, each of the shaping deflector and the main deflector and sub-deflector for beam scanning includes a plurality of pairs of opposite electrodes, and each opposite electrode is formed by forming an electrode film of a metal over the surface of a nonconducting base material by vacuum deposition or sputtering.
Abstract:
When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.
Abstract:
A writing apparatus includes a beam current detector which detects abeam current of the electron beam during execution of the writing when the substrate is not irradiated; a fluctuation value calculator which calculates a fluctuation value of the electron beam based on the beam current; and a corrector which corrects the electron beam fluctuation during the writing based on the fluctuation value.