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公开(公告)号：KR101473720B1
公开(公告)日：2014-12-18
申请号：KR1020080060891
申请日：2008-06-26
Applicant: 삼성전자주식회사
IPC: G02B5/20 , G02F1/1335
CPC classification number: G02B5/201
Abstract: 이미지촬상장치는다수의광 감지소자를포함하는픽셀어레이및 상기다수의광 감지소자들중에서대응되는광 감지소자상부에적층된다수의컬러필터들을포함하는컬러필터어레이를포함한다. 상기컬러필터어레이는유리기판상에제1스펙트럼영역의빛을필터링하기위한제1타입의컬러필터와상기제1타입의컬러필터의적어도일부에적층되도록제2스펙트럼영역의빛을필터링하기위한제2타입의컬러필터를포함한다. 상기이미지촬상장치는컬러필터의제조공정을단순화하고작은레이아웃을갖는컬러필터를제조할수 있다.
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公开(公告)号：KR1020140111488A
公开(公告)日：2014-09-19
申请号：KR1020130025702
申请日：2013-03-11
Applicant: 삼성전자주식회사
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14641
Abstract: A depth pixel of a three-dimensional image sensor includes a light detection region, first and second photo gates, and first and second floating diffusion regions. The light detection region collects electric charges based on light reflected by an object. An internal electric field is formed for moving the collected charges in first and second directions. The first photo gate is formed on the upper part of the light detection region, and is activated in response to a first photo control signal. The first floating diffusion region accumulates first electric charges drifted in the first direction if the first photo gate is activated. The second photo gate is formed on the upper part of the photo detection region apart from the first photo gate, and is activated in response to the first photo control signal. The second floating diffusion region accumulates second electric charges drifted in the second direction if the second photo gate is activated.
Abstract translation: 三维图像传感器的深度像素包括光检测区域，第一和第二光栅以及第一和第二浮动扩散区域。 光检测区域基于被物体反射的光来收集电荷。 形成用于在第一和第二方向上移动所收集的电荷的内部电场。 第一光栅形成在光检测区域的上部，并且响应于第一光控制信号被激活。 如果第一光栅被激活，第一浮动扩散区积累在第一方向上漂移的第一电荷。 第二光栅形成在除了第一光栅之外的光检测区域的上部，并且响应于第一光控制信号被激活。 如果第二光栅被激活，则第二浮动扩散区积累沿第二方向漂移的第二电荷。
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公开(公告)号：KR101437912B1
公开(公告)日：2014-09-05
申请号：KR1020070117792
申请日：2007-11-19
Applicant: 삼성전자주식회사
CPC classification number: H04N5/361 , H01L27/14656 , H04N5/3594
Abstract: 광감지기와 플로팅 디퓨젼 영역 사이에 전송 게이트가 형성된 픽셀들을 포함하는 이미지 센서를 구동하기 위하여, 광집적 모드의 제 1 구간 동안 상기 전송 게이트에 음의 전압을 인가하고, 상기 광집적 모드의 제 2 구간 동안 상기 전송 게이트에 양의 서브문턱(sub-threshold) 전압을 인가한다. 상기 광집적 모드 후의 독출 모드 동안 상기 전송 게이트에 상기 서브문턱 전압보다 큰 독출 전압을 인가한다. 광집적 모드의 대부분의 시간 동안 전송 게이트에 음의 전압을 인가함으로써 이미지 센서의 노이즈를 감소시키고, 선형 응답과 로그 응답이 병합하여 이미지 센서의 넓은 동적 범위를 구현할 수 있다.
이미지 센서, 선형 응답(linear response), 로그 응답(logarithmic response), 동적 범위(dynamic range), 불루밍 전류(blooming current)-
公开(公告)号：KR101436504B1
公开(公告)日：2014-09-02
申请号：KR1020080008125
申请日：2008-01-25
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: G11B17/228 , H01L27/14625 , H01L27/14629 , H01L27/14643
Abstract: 입사광의 이용 효율을 높일 수 있는 이미지 센서가 제공된다. 이미지 센서는 기판, 상기 기판 상의 반사체, 반사체 상의 광전 변환 소자, 및 광전 변환 소자의 하부 영역에 위치하는 정공 유인 영역을 포함한다.
이미지 센서, 광전 변환 소자, 유효 거리, 크로스토크Abstract translation: 提供一种能够提高入射的光的利用效率的图像传感器。 所述图像传感器包括位于所述基板上的孔吸引区域，该光电转换元件的下部区域，并在所述基板上在反射器上的光电转换元件，所述反射器。
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公开(公告)号：KR1020130043716A
公开(公告)日：2013-05-02
申请号：KR1020110107769
申请日：2011-10-21
Applicant: 삼성전자주식회사
IPC: H04N5/359 , H01L27/146
CPC classification number: H01L27/14623 , H01L27/1463 , H04N5/359 , H01L27/146
Abstract: PURPOSE: An image sensor for stabilizing a black level is provided to prevent leakage light and diffusion carriers from an active region from arriving at pixels which are configured to measure black levels, thereby providing stabilized black levels. CONSTITUTION: First pixels(102) are formed in an active region on a semiconductor substrate(100) to measure photo-charges corresponding to incident light. Second pixels(104) are formed in an optical-black region on the semiconductor substrate to measure black levels. A deep trench(150) is formed vertically, the depth of which is greater than the depth of the photoelectric conversion unit, in a boundary region which is adjacent to the active region of the optical-black region, in order to block leakage light and diffusion carriers from the active region.
Abstract translation: 目的：提供一种用于稳定黑色电平的图像传感器，以防止有源区域的泄漏光和扩散载体到达被配置为测量黑色电平的像素，从而提供稳定的黑色电平。 构成：第一像素（102）形成在半导体衬底（100）上的有源区中，以测量对应于入射光的光电荷。 第二像素（104）形成在半导体衬底上的黑 - 黑区域中以测量黑色电平。 为了阻挡泄漏光，与邻近光学黑色区域的有源区域的边界区域垂直地形成深沟槽（150），其深度大于光电转换单元的深度，并且 来自活性区的扩散载体。
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Patent Agency Ranking
公开(公告)号：KR1020130009427A
公开(公告)日：2013-01-23
申请号：KR1020110070544
申请日：2011-07-15
Applicant: 삼성전자주식회사
IPC: H04N5/374 , H01L27/146
CPC classification number: H01L27/14603 , H01L27/14641 , H04N5/374 , H01L27/146 , H04N5/357 , H04N5/3577
Abstract: PURPOSE: A CMOS image sensor is provided to improve sensitivity by increasing a transducer gain. CONSTITUTION: A photodiode outputs an optical charge by converting a received optical signal. A sensing node(17) senses the optical charge. A driving circuit converts the optical charge into an electric signal. The driving circuit includes one or more conductive contacts adjacent to the sensing node. An output line(18) is connected with the driving circuit to output the electric signal.
Abstract translation: 目的：提供CMOS图像传感器，通过增加传感器增益来提高灵敏度。 构成：光电二极管通过转换接收到的光信号来输出光电荷。 感测节点（17）感测光电荷。 驱动电路将光电转换成电信号。 驱动电路包括与感测节点相邻的一个或多个导电触点。 输出线（18）与驱动电路连接以输出电信号。
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177.发明公开빛 샘 보상을 하는 단위이미지센서, 상기 단위이미지센서로 구현된 이미지센서어레이 및 상기 이미지센서어레이의 빛 샘 보상방법 有权光泄漏补偿单元图像传感器，包括单元图像传感器的图像传感器阵列和用于补偿图像传感器阵列的光泄漏的方法
公开(公告)号：KR1020110133355A
公开(公告)日：2011-12-12
申请号：KR1020100053033
申请日：2010-06-04
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H04N5/359 , H04N5/361
CPC classification number: H04N5/361 , H04N5/359 , H04N5/3594 , H01L27/14643
Abstract: PURPOSE: A unit image sensor for compensating for leaked light, an image sensor array made of the unit image sensor, and a method for compensating for leaked light of the image sensor array are provided to compensate for leaked light currents remaining a storage diode configuring a normal image sensor array. CONSTITUTION: A unit image sensor receives light(LIGHT) from a backside area(DEEP PD1,DEEP PD2). Charges generated in the backside area are transferred to the storage diode through several processes. A global shutter step transfers signals which are optically converted from all photo diodes into a floating diffusion area. An electrical signal corresponding to charges transferred to the floating diffusion area is outputted by a line unit.
Abstract translation: 目的：提供一种用于补偿泄漏光的单元图像传感器，由单位图像传感器制成的图像传感器阵列，以及用于补偿图像传感器阵列的泄漏光的方法，以补偿构成图像传感器阵列的存储二极管剩余的泄漏光电流 正常图像传感器阵列。 构成：单元图像传感器从背面区域（DEEP PD1，DEEP PD2）接收光（LIGHT）。 在背面产生的电荷通过几个过程传送到存储二极管。 全局快门步骤将从所有光电二极管光学转换的信号转移到浮动扩散区域。 对应于转移到浮动扩散区域的电荷的电信号由线路单元输出。
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公开(公告)号：KR1020110043867A
公开(公告)日：2011-04-28
申请号：KR1020090100581
申请日：2009-10-22
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14641 , H01L21/76898 , H01L23/481 , H01L27/14612 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14687 , H01L2224/9212 , H01L2224/80896 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
Abstract: PURPOSE: An image sensor and a manufacturing method thereof are provided to obtain high performance and reduce the height of a structure by using a copper wire with low resistance. CONSTITUTION: A driving device is arranged on a first substrate. A first silicon oxide layer is formed on the first substrate and covers the driving device. A photoelectric conversion device is arranged on a second substrate(200a). A second silicon oxide layer covers the photoelectric conversion device and the surface of the second silicon oxide layer is bonded with the upper side of the first silicon oxide layer. A connection unit passes through the second substrate, the second silicon oxide layer, and the silicon oxide layer. An anti-reflection layer(238) is formed on the second surface of the second substrate.
Abstract translation: 目的：提供一种图像传感器及其制造方法，以通过使用具有低电阻的铜线来获得高性能并降低结构的高度。 构成：驱动装置布置在第一基板上。 第一氧化硅层形成在第一基板上并覆盖驱动装置。 光电转换装置设置在第二基板（200a）上。 第二氧化硅层覆盖光电转换元件，第二氧化硅层的表面与第一氧化硅层的上侧接合。 连接单元通过第二基板，第二氧化硅层和氧化硅层。 在第二基板的第二表面上形成防反射层（238）。
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公开(公告)号：KR1020110008762A
公开(公告)日：2011-01-27
申请号：KR1020090066268
申请日：2009-07-21
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L27/14627
Abstract: PURPOSE: A unit pixel and CMOS image sensor having the same is provided to suppress optical crosstalk by assembling unit pixels, color filters, and micro lenses together to improve a plain light property. CONSTITUTION: A photo diode changes an incident light into electric charge. If the electric charge is accumulated, a plurality of transistors generates an electric signal corresponding to the accumulated electric charge. The photo diode is inclined in a semiconductor substrate(120a) based on the incident angle of an incident light. The photo diode comprises a plurality of doped regions(131a, 132a, 133a) Doped regions are laminated in inclination direction based on the incident angle.
Abstract translation: 目的：提供具有该单元像素和CMOS图像传感器的单位像素和CMOS图像传感器以通过将单位像素，滤色器和微透镜组装在一起来提高平坦的光特性来抑制光学串扰。 构成：光电二极管将入射光改变为电荷。 如果电荷累积，则多个晶体管产生对应于累积电荷的电信号。 基于入射光的入射角，光电二极管在半导体衬底（120a）中倾斜。 所述光电二极管包括多个掺杂区域（131a，132a，133a），所述掺杂区域基于所述入射角度在倾斜方向上层叠。
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公开(公告)号：KR1020100070798A
公开(公告)日：2010-06-28
申请号：KR1020080129503
申请日：2008-12-18
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14654 , H01L27/14607 , H01L27/1461 , H01L27/1463 , H04N5/3741
Abstract: PURPOSE: A back-side illumination image sensor is provided to offer clear images by controlling a dark current generated in the silicon surface of the upper part of a photo diode. CONSTITUTION: A plurality of P-type wells(15) are formed between a plurality of photo diodes(16). A first P-type layer(14) is formed on a plurality of photo diodes and a plurality of P-type wells. An N-type layer(13) is formed on the first P-type layer. A second P-type layer(17) is formed under a plurality of photo diodes and a plurality of P-type wells. The second P-type layer has higher concentration than the concentration of the first P-type layer.
Abstract translation: 目的：提供背面照明图像传感器，以通过控制在光电二极管的上部的硅表面中产生的暗电流来提供清晰的图像。 构成：在多个光电二极管（16）之间形成多个P型阱（15）。 第一P型层（14）形成在多个光电二极管和多个P型阱上。 在第一P型层上形成N型层（13）。 第二P型层（17）形成在多个光电二极管和多个P型阱下。 第二P型层的浓度比第一P型层的浓度高。
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