公开(公告)号：US09859099B2

公开(公告)日：2018-01-02

申请号：US15052881

申请日：2016-02-25

Applicant: ADVANTEST CORPORATION

Inventor： Akio Yamada ,  Masahiro Seyama ,  Hideki Nasuno

IPC: H01J37/244 ,  H01J37/20 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3045 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/15 ,  H01J2237/2025 ,  H01J2237/20285 ,  H01J2237/30455 ,  H01J2237/31766 ,  H01J2237/31774

Abstract: Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.

公开(公告)号：US09812284B2

公开(公告)日：2017-11-07

申请号：US15070679

申请日：2016-03-15

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Hideki Matsui

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1472 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/103 ,  H01J2237/1504 ,  H01J2237/2485 ,  H01J2237/3175 ,  H01J2237/31754 ,  H01J2237/31762 ,  H01J2237/31766

Abstract: In one embodiment, a charged particle beam drawing apparatus deflects a charged particle beam with a deflector to draw a pattern. The apparatus includes a storage unit that stores an approximate formula indicating a correspondence relationship between a settling time for a DAC amplifier that controls the deflector, and a position shift amount, from a design position, of a drawn position of each evaluation pattern drawn on a first substrate while the settling time and an amount of deflection by the deflector are changed, a shot position correction unit that creates a correction formula indicating a relationship between an amount of deflection and a shot position shift amount at the settling time, from the approximate formula and the settling time for the DAC amplifier based on an amount of deflection of a shot, obtains a position correction amount by using the amount of deflection of the shot and the correction formula, and corrects a shot position defined by the shot data based on the position correction amount, and a drawing unit that performs drawing by using the shot data with a corrected shot position.

公开(公告)号：US09805905B2

公开(公告)日：2017-10-31

申请号：US14838907

申请日：2015-08-28

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Yamashita ,  Ryoichi Yoshikawa ,  Kazuhiro Chiba ,  Hiroshi Matsumoto

IPC: H01J37/04

CPC classification number: H01J37/045 ,  H01J37/1471 ,  H01J37/20 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/20292 ,  H01J2237/30483 ,  H01J2237/3175

Abstract: A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.

公开(公告)号：US20160225583A1

公开(公告)日：2016-08-04

申请号：US15021039

申请日：2014-05-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Natsuki TSUNO ,  Yoshinobu KIMURA ,  Hideyuki KAZUMI ,  Hajime KAWANO ,  Junichiro TOMIZAWA

IPC: H01J37/28 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/043

Abstract: An object of the present invention is to realize both of the accuracy of measuring the amount of secondary electron emissions and the stability of a charged particle beam image in a charged particle beam device. In a charged particle beam device, extraction of detected signals is started by a first trigger signal, the extraction of the detected signals is completed by a second trigger signal, the detected signals are sampled N times using N (N is a natural number) third trigger signals that equally divide an interval time T between the first trigger signal and the second trigger signal, secondary charged particles are measured by integrating and averaging the signals sampled in respective division times ΔT obtained by equally dividing the interval time T, and the division time ΔT is controlled in such a manner that the measured number of secondary charged particles becomes larger than the minimum number of charged particles satisfying ergodicity.

Abstract translation: 本发明的目的在于实现测量二次电子发射量的精度和带电粒子束装置中的带电粒子束图像的稳定性。 在带电粒子束装置中，通过第一触发信号开始检测到的信号的提取，通过第二触发信号完成检测信号的提取，使用N（N是自然数）第三 触发信号，将第一触发信号和第二触发信号之间的间隔时间T均等地分开，通过对通过等分间隔时间T获得的各个分割时间ΔT中采样的信号进行积分和平均来测量次级带电粒子， 以这样的方式控制ΔT，使得测量的二次带电粒子的数量变得大于满足遍遍性的带电粒子的最小数量。

公开(公告)号：US09312102B2

公开(公告)日：2016-04-12

申请号：US13315567

申请日：2011-12-09

Applicant: Yasushi Kamiya ,  Einstein Noel Abarra ,  Yuta Konno

Inventor： Yasushi Kamiya ,  Einstein Noel Abarra ,  Yuta Konno

IPC: H01J37/302 ,  H01J37/305

CPC classification number: H01J37/302 ,  G05B15/02 ,  H01J37/3053 ,  H01J2237/0044 ,  H01J2237/043 ,  H01J2237/334

Abstract: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.

Abstract translation: 一种在包括保持衬底的衬底保持器，发射离子束的离子源，发射电子的中和器和快门的设备中处理衬底的方法，该快门设置在离子源和中和器之间的空间中 布置有衬底保持器布置的空间，并且被构造成屏蔽朝向衬底行进的离子束，包括调节由中和器发射的电子的量并且在快门移动期间到达衬底保持器。

公开(公告)号：US20160086768A1

公开(公告)日：2016-03-24

申请号：US14852699

申请日：2015-09-14

Applicant: NuFlare Technology, Inc.

Inventor： Yasuyuki TANEDA ,  Yoshiro YAMANAKA

IPC: H01J37/30 ,  H01J37/147 ,  H01J37/04 ,  B01J19/08 ,  H01J37/317

CPC classification number: H01J37/3002 ,  B01J19/087 ,  B01J2219/0801 ,  B01J2219/085 ,  B01J2219/0869 ,  B01J2219/0875 ,  C01B13/10 ,  H01J37/045 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/006 ,  H01J2237/043 ,  H01J2237/15

Abstract: An ozone supplying apparatus according to an embodiment of the present invention is an ozone gas supplying apparatus which supplies an ozone gas to a vacuum apparatus. The ozone supplying apparatus includes an ozone generator configured to generate the ozone gas, a first flow controller configured to control a flow rate of the ozone gas generated by the ozone generator, a second flow controller configured to control a flow rate of the ozone gas supplied to the vacuum apparatus, and a main pipe provided on a secondary side of the first flow controller and on a primary side of the second flow controller, with the ozone gas being introduced into the main pipe at such a flow rate that an internal pressure of the main pipe is controlled to be lower than atmospheric pressure by the first flow controller.

Abstract translation: 根据本发明的实施方式的臭氧供给装置是向真空装置供给臭氧气体的臭氧气体供给装置。 所述臭氧供给装置具备构成为产生所述臭氧气体的臭氧发生器，构成为控制由所述臭氧发生器产生的臭氧气体的流量的第一流量控制器，构成为控制供给的臭氧气体的流量的第二流量控制器 以及设置在第一流量控制器的次级侧和第二流量控制器的初级侧上的主管，其中臭氧气体以这样的流量被引入到主管中， 主管由第一流量控制器控制为低于大气压力。

公开(公告)号：US20160012170A1

公开(公告)日：2016-01-14

申请号：US14795547

申请日：2015-07-09

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: G06F17/50 ,  H01J37/09 ,  H01J37/317

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案，其用于在带电粒子多光束处理装置中的目标上曝光期望图案，以便匹配可能具有不同类型的参考写入工具：期望的图案被提供为适当的图形表示 用于参考工具，如光栅图形，在目标上的图像区域上。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：US09218991B2

公开(公告)日：2015-12-22

申请号：US14170293

申请日：2014-01-31

Applicant: International Rectifier Corporation

Inventor： Michael A. Briere

IPC: A61N5/00 ,  H01L21/67 ,  C30B29/40 ,  C30B33/04 ,  H01L21/02 ,  H01J37/317 ,  H01L21/265 ,  H01L21/324 ,  C30B31/20 ,  H01L29/20

CPC classification number: H01L21/67011 ,  C30B29/403 ,  C30B31/20 ,  C30B33/04 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/188 ,  H01J2237/304 ,  H01J2237/31711 ,  H01J2237/31713 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/26546 ,  H01L21/3245 ,  H01L29/2003

Abstract: There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.

Abstract translation: 在此公开了在高温表面平衡条件下用于离子注入的方法和系统的各种实施方式。 该方法可以包括将III-氮化物半导体体置于表面平衡室中，建立大于或等于III-氮化物半导体体的表面平衡压力的气体压力，并将III-氮化物半导体体加热到升高的 注入温度在表面平衡室中，同时基本保持气体压力。 该方法还包括将III-氮化物半导体体植入升高的植入温度室的表面平衡状态，同时基本上保持气体压力，使用与表面平衡室接合的离子注入机执行注入。

公开(公告)号：US20150243481A1

公开(公告)日：2015-08-27

申请号：US14626891

申请日：2015-02-19

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco Wieland

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/30

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

Abstract: The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

Abstract translation: 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数 被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

公开(公告)号：US09111715B2

公开(公告)日：2015-08-18

申请号：US13601818

申请日：2012-08-31

Applicant: N. William Parker ,  Wesley Hughes

Inventor： N. William Parker ,  Wesley Hughes

IPC: H01J37/05 ,  H01J37/305

CPC classification number: H01J37/05 ,  H01J37/3056 ,  H01J2237/043 ,  H01J2237/057 ,  H01J2237/1534

Abstract: A multi-element electrostatic chicane energy filter, with the addition of electrostatic quadrupole and hexapole excitations to the dipole elements. A charged particle energy filter according to the present invention with a combination of dipole, quadrupole, and hexapole elements capable of producing a line focus at an aperture reduces space-charge effects and aperture damage. A preferred embodiment allows the filter to act as a conjugate blanking system. The energy filter is capable of narrowing the energy spread to result in a smaller beam.

Abstract translation: 多元素静电智能能量滤波器，向偶极子元件添加静电四极和六极激发。 根据本发明的具有能够在孔处产生线焦点的偶极子，四极和六极元件的组合的带电粒子能量过滤器减少了空间电荷效应和孔径损伤。 优选的实施方案允许过滤器充当共轭体消隐系统。 能量过滤器能够使能量扩展变窄，导致较小的光束。