Method for Fabricating Suspended MEMS Structures
    188.
    发明申请
    Method for Fabricating Suspended MEMS Structures 有权
    制造悬浮MEMS结构的方法

    公开(公告)号:US20160304340A1

    公开(公告)日:2016-10-20

    申请号:US14687943

    申请日:2015-04-16

    Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

    Abstract translation: 一种用于制造悬浮微机电系统(MEMS)结构的方法,其包括部分或完全悬浮在衬底上的外延半导体功能层。 在基板上形成牺牲剥离层和功能元件层。 功能器件层被蚀刻以在功能器件层中形成窗口,其限定要由功能器件层形成的悬置的MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲剥离层,以去除由窗口限定的区域中的功能层下方的牺牲剥离层,以形成悬浮的MEMS结构。

    Method for forming a microfabricated structure
    190.
    发明授权
    Method for forming a microfabricated structure 有权
    形成微细结构的方法

    公开(公告)号:US09302905B1

    公开(公告)日:2016-04-05

    申请号:US14738980

    申请日:2015-06-15

    Inventor: Suresh K Sampath

    Abstract: A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.

    Abstract translation: 一种用于在器件层中形成特征的方法,包括在剥离材料上形成第一层剥离材料和第二层光致抗蚀剂,暴露光致抗蚀剂并显影光致抗蚀剂和剥离层。 光致抗蚀剂以比剥离层更慢的速率显影。 显影导致剥离层中的第一开口和光致抗蚀剂层中的第二开口,其中由于不同的显影速率,第一开口小于第二开口。 然后将器件层干蚀刻或通过开口离子研磨。 随后去除第一层和第二层离开图案化的器件层的干净的表面,而不需要使用其它方法形成的栅栏。

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