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    METHOD ELIMINATING VERY FINE PARTICLES FROM SOLID SURFACE
    11.
    发明专利
    METHOD ELIMINATING VERY FINE PARTICLES FROM SOLID SURFACE 失效

    公开(公告)号：JPH04211127A

    公开(公告)日：1992-08-03

    申请号：JP511491

    申请日：1991-01-21

    Applicant: TENCOR INSTRUMENTS

    Inventor： JIYON ERU BOOTO

    IPC: B08B7/00 ,  B23K7/06 ,  B23K26/03 ,  H01L21/00 ,  H01L21/304

    Abstract: PURPOSE: To remove fine particles from wafer, mask, reticule, and the similar matters without damaging a surface or contaminating a clean area by using a focused laser beam or the like, and generating an impact wave from a point on the surface which is the closest to the particle. CONSTITUTION: A wafer 11 is arranged on a wafer supporting part 13, and moved to a particle detector 15. The position of each particle to be detected on the surface is decided, and recorded in a computer 19. The wafer 11 is moved to a laser impact wave removing station. Response to a signal on a line 59 from the computer is obtained. Then, a laser beam pulse 53 is directed and focused to a point 63 with a shallow angle or a large beam convergent angle for escaping any damage on the wafer 11. Then, an impact wave can be generated. This impact wave removes the particle on the wafer surface which is the closest to the point 63.

    METHOD AND DEVICE FOR NONDESTRUCTIVE SURFACE INSPECTION
    13.
    发明专利
    METHOD AND DEVICE FOR NONDESTRUCTIVE SURFACE INSPECTION 失效

    公开(公告)号：JPH07128244A

    公开(公告)日：1995-05-19

    申请号：JP8223994

    申请日：1994-03-29

    Applicant: TENCOR INSTRUMENTS

    Inventor： NORUBERUTO MARUKUSAA

    IPC: G01N21/88 ,  G01N21/93 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  G11B5/84

    Abstract: PURPOSE: To accurately detect a directional small flaw and surface roughness or the like by spatially fixing an optical system, and focusing the duffused light from an inspection object at a narrow angle in close vicinity to the optical axis and a wide angle separate from the optical axis. CONSTITUTION: The light from a light source 20 is irradiated to an inspection object (a wafer) 3 through a projecting lens 36', a spot diaphragm 21' and a polarizer 22. A size shape of an irradiating point 24 is adjusted by the lens 36' and the diaphragm 21', and the direct reflected light Lo from the wafer 3 is checked by a dark field diaphragm 41. The diffused light from a wafer 3 surface is focused by its maximum quantity by an elliptic mirror 42 having a rotational symmetric property, and is transmitted to a light detector 7. A mirror 42 inside which silver plating is performed forms an image of the irradiating point 24 in a hole 25 of a diaphragm 6 by the diffused light L1 and L2 and all beams of light, and the diaphragm 6 transmits only the diffused light L1 and L2 to the detector 7. Therefore, the sufficient and stable diffused light can be supplied from a wide focusing area.

    METHOD FOR DETERMINING POSITION OF SCANNING BEAM
    14.
    发明专利
    METHOD FOR DETERMINING POSITION OF SCANNING BEAM 失效

    公开(公告)号：JPH0712746A

    公开(公告)日：1995-01-17

    申请号：JP17645491

    申请日：1991-07-17

    Applicant: TENCOR INSTRUMENTS

    Inventor： JIRII PIISEN ,  KENESU PII GUROSU ,  BURAIAN RESURII ,  JIYOOJI KUREN

    IPC: G01N21/88 ,  G01N21/93 ,  G01N21/94 ,  G01N21/956 ,  G02B17/06 ,  G02B26/10 ,  G02B27/00 ,  G03F7/20 ,  H01L21/268

    Abstract: PURPOSE: To heighten the accuracy by storing the elapsed time from a memory start marker to a marker point address in such a manner as to have the corresponding elapsed time to which the marker point address relates to be associated with an unknown wafer beam position. CONSTITUTION: A wafer 19 is placed between opposite light marker pins 53, 55 for the wafer 19, and aligned with the scanning line of an optical system. The beam 57 is swept across the wafer 19, so that the amplitude of a dispersion signal is extracted at specified positions 57a-57c, and the wafer 19 is covered with a regular array of sampling points 51 provided at uniform intervals. The start of the array takes the marker pins 53, 54 as reference. The marker pins 53, 55 use a standard wafer having a dispersion source. The apparent position of the dispersion source is measured by an initial table of the sampling points, and the difference between the apparent position and the known position is used as an error function for correcting a predetermined value stored in a random access memory.

    METHOD FOR MANUFACTURE OF FINE TIP TO BE USED AS CANTILEVER
    15.
    发明专利
    METHOD FOR MANUFACTURE OF FINE TIP TO BE USED AS CANTILEVER 失效

    公开(公告)号：JPH04211144A

    公开(公告)日：1992-08-03

    申请号：JP511591

    申请日：1991-01-21

    Applicant: TENCOR INSTRUMENTS

    Inventor： AAMAN PII NIYUUKAAMANZU ,  JIYOZEFU BAAGAA

    IPC: H01J37/28 ,  G01B7/34 ,  G01N37/00 ,  G01Q60/00 ,  G01Q70/06 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  H01L21/266 ,  H01L21/306 ,  H01L21/66

    Abstract: PURPOSE: To obtain a fine top end obtained as a cantilever having a controllable high aspect rate by providing a thin film of a semiconductor material in one conductive type so as to be brought into contact with a further thick layer of a semiconductor material in a second opposite conductive type. CONSTITUTION: A system 11 includes a sheet 13 of a semiconductor material, and this includes an upper sheet 15 in a first conductive type (for example, an (n) type) and a second lower layer 17 in a second conductive type (for example, a (p) type) opposite to the first conductive type. A high energy ion thin beam extracted from an element in the first conductive type is directed through the first layer to the second layer, and a long and thin ion profile with a high aspect rate of the second material except the ion profile in the first conductive type is obtained by etching away the second layer, leaving the first layer as a cantilever space, and leaving the material of the ion profile so as to be projected from this base. Thus, a fine top end can be formed.

    Optical scanning system for surface inspection
    17.
    发明专利
    Optical scanning system for surface inspection 未知

    公开(公告)号：AU3376597A

    公开(公告)日：1998-01-05

    申请号：AU3376597

    申请日：1997-06-03

    Applicant: TENCOR INSTRUMENTS

    Inventor： LESLIE BRIAN C ,  NIKOONAHAD MEHRDAD ,  WELLS KEITH B

    IPC: G01N21/956 ,  G01N21/94 ,  G01N21/00

    Abstract: In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.

    Photoemission contaminant detection
    19.
    发明专利
    Photoemission contaminant detection 未知

    公开(公告)号：GB2253051A

    公开(公告)日：1992-08-26

    申请号：GB9103563

    申请日：1991-02-20

    Applicant: TENCOR INSTRUMENTS

    Inventor： STOKOWSKI STANLEY ,  WOLZE DAVID ,  NEUKERMANS ARMAND P

    IPC: G01B11/06 ,  G01N23/227

    Abstract: For determining the presence, and measuring the thickness of a contaminant layer on the surface of an electrically conductive material (33) such as a semiconductor, a metal or a metal silicide, a change in photoemission current from an illuminated spot on the surface is used to determine the presence and extent of a contaminant layer at the illuminated site (39). Compensation is provided for the effects of capacitive current and photovoltaic current. A pattern of illumination sites (39) on the surface of the conductor (33) can cover all points on the surface.

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