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公开(公告)号：KR1020090060198A
公开(公告)日：2009-06-11
申请号：KR1020080123130
申请日：2008-12-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/00
Abstract: A titanium layer deposition method and apparatus are provided to make the silicide phase uniform by restricting the crystallization of titanium silicide layer and deviation of composition in the process of silicidation of titanium, thereby improve uniformity of wafer surface. A titanium layer deposition apparatus(12) comprises a treatment chamber(14) capable of vacuum evacuation, a mounting table(38) which is installed within the treatment chamber to hold an object, a heating device(42) heating the object, a gas supply device for supplying a source gas including titanium, reductant gas and inactive gas into the treatment chamber, a plasma generator(28) forming plasma within the treatment chamber, and a controller(74) which controls in order to perform a deposition method.
Abstract translation: 提供钛层沉积方法和装置，通过限制钛硅化物层的结晶和钛的硅化过程中的组成偏差来使硅化物相均匀，从而提高晶片表面的均匀性。 钛层沉积设备（12）包括能够真空抽真空的处理室（14），安装在处理室内以保持物体的安装台（38），加热物体的加热装置（42） 供给装置，用于将包括钛，还原剂气体和惰性气体的源气体供应到处理室中;等离子体发生器（28），其在处理室内形成等离子体;以及控制器（74），其控制以执行沉积方法。
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公开(公告)号：KR1020090032963A
公开(公告)日：2009-04-01
申请号：KR1020080080928
申请日：2008-08-19
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: A metal layer depositing method and a computer-readable recording medium are provided to improve the throughput by forming the desired silicide film into the process of depositing the titanium nitride film. A substrate processing apparatus(100) comprises a common return chamber(102) formed with the polygonal shape and a plurality of process chambers(104A~104D) which can absorb in a vacuum. The substrate processing apparatus comprises a carry-in side transfer room(110) of the rectangular shape having two load-lock chambers(108A,108B) capable of inhaling in the vacuum condition. The substrate processing apparatus comprises a plurality of induction pots(112A~112C) accommodating a plurality of silicon wafers(W) and the cassette, and an orienteer(114) rotating the wafer. The process chamber is connected through gate valves(106A~106D). Main chucks(105A~105D) accommodating the wafer are prepared in each process chamber.
Abstract translation: 提供金属层沉积方法和计算机可读记录介质以通过将所需的硅化物膜形成到沉积氮化钛膜的过程中来提高生产量。 基板处理装置（100）包括形成为多边形的公共返回室（102）和能够在真空中吸收的多个处理室（104A〜104D）。 基板处理装置包括矩形形状的携带侧传送室（110），其具有能够在真空条件下吸入的两个负载锁定室（108A，108B）。 基板处理装置包括容纳多个硅晶片（W）和盒的多个感应罐（112A〜112C）和旋转晶片的定向件（114）。 处理室通过闸阀（106A〜106D）连接。 在每个处理室中准备容纳晶片的主卡盘（105A〜105D）。
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公开(公告)号：KR100886989B1
公开(公告)日：2009-03-04
申请号：KR1020070038216
申请日：2007-04-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/5093 , C23C16/14 , C23C16/45565 , C23C16/45574 , H01L21/28556 , H01L21/76843 , H01L21/76856
Abstract: 플라즈마를 이용한 CVD에 의해 개구 직경이 작고 및/또는 높은 아스펙트비의 홀을 갖는 피처리 기판에 Ti를 성막할 때에, 차지 업 데미지에 의한 소자의 파괴가 발생하기 어려운 Ti 막의 성막 방법을 제공하는 것을 목적으로 한다.
한 쌍의 평행 평판 전극으로서 기능하는 샤워 헤드(10) 및 전극(8)을 갖는 챔버(1) 내에, 개구 직경이 0.13㎛ 이하 및/또는 아스펙트비가 10 이상인 홀을 갖는 웨이퍼(W)를 배치하고, 처리 가스로서 TiCl
4 가스 및 H
2 가스 및 Ar 가스를 도입하면서 샤워 헤드(10)에 고주파 전원(34)으로부터 고주파 전력을 공급하여 이들 사이에 플라즈마를 형성하며, 이 플라즈마에 의해 처리 가스의 반응을 촉진하여 웨이퍼에 Ti 막을 성막할 때에, Ar 가스 유량을 1600mL/min(sccm)미만으로 제어하여 플라즈마가 형성되었을 때의 상기 홀의 바닥부에 도달하는 이온량을 저감하면서 Ti 막을 성막한다.-
公开(公告)号：KR100824088B1
公开(公告)日：2008-04-21
申请号：KR1020067016824
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/46 , H01L21/00 , H01L21/02
CPC classification number: H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
Abstract: 반도체 처리용의 성막 처리 용기(4)내에 재치대 장치가 배설된다. 재치대 장치는 피처리 기판(W)을 재치하는 상면 및 상면으로부터 하강하는 측면을 갖는 재치대(16)와, 재치대(16)내에 배설되고, 또한 그 상면을 거쳐서 기판(W)을 가열하는 히터(18)를 포함한다. 재치대(16)의 상면 및 측면을 CVD 프리코트층(28)이 피복한다. 프리코트층(28)은 히터(18)의 가열에 유래하는 재치대(16)의 상면 및 측면으로부터의 복사열량을 실질적으로 포화시키는 두께 이상의 두께를 갖는다.
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公开(公告)号：KR1020070088386A
公开(公告)日：2007-08-29
申请号：KR1020070018558
申请日：2007-02-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3205
CPC classification number: C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
Abstract: A method for forming a Ti based film is provided to prevent the reaction between Ni and Ti in a gas spray member by using improved film forming conditions. A Ti based film is formed on a wafer in first a predetermined temperature range of a gas spray member in a TiCl4 gas pressure range of 0.1 to 2.5 Pa, wherein the wafer is arranged in a chamber The first predetermined temperature range of the gas spray member is 300 to 450 °C. The flow rate of a TiCl4 gas in the Ti based film forming process is in a range of 1 to 12 mL/min(sccm). A cleaning process is performed on an inner space of the chamber by using a fluorine based cleaning gas in a second predetermined temperature range of the gas spray member. The second predetermined temperature range of the gas spray member is 200 to 300 °C.
Abstract translation: 提供了一种用于形成Ti基膜的方法，以通过改进的成膜条件来防止气体喷涂部件中的Ni和Ti之间的反应。 首先在TiCl4气体压力范围为0.1〜2.5Pa的气体喷射构件的预定温度范围内在晶片上形成Ti基膜，其中晶片布置在腔室中。气体喷射构件的第一预定温度范围 为300〜450℃。 Ti基成膜工艺中TiCl 4气体的流量为1〜12mL / min（sccm）。 通过在气体喷射构件的第二预定温度范围内使用氟基清洁气体在室的内部空间上进行清洁处理。 气体喷射构件的第二预定温度范围为200至300℃。
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Patent Agency Ranking
公开(公告)号：KR1020070086426A
公开(公告)日：2007-08-27
申请号：KR1020077013891
申请日：2005-12-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/203 , H01L21/205
CPC classification number: C23C16/4404 , H01J37/32449 , H01L21/28562 , H01L21/76843
Abstract: Disclosed is a film-forming method using such a film-forming apparatus which comprises a process chamber in which a stage for holding a substrate to be processed is arranged, and a shower head portion for supplying a process gas for film formation into the process chamber to which portion a high-frequency power is applied for exciting a plasma within the process chamber. This film-forming method is characterized by comprising a film-forming step wherein a thin film containing a metal is formed over the substrate to be processed, and a step for forming a protective film wherein a protective film containing another metal is formed over the shower head portion before the film-forming step.
Abstract translation: 公开了一种使用这种成膜装置的成膜方法，该成膜装置包括处理室，其中设置有用于保持待处理基材的载物台，以及用于将成膜处理气体供应到处理室的喷淋头部分 施加高频功率以激发处理室内的等离子体。 该成膜方法的特征在于包括：成膜步骤，其中在待加工的基材上形成含有金属的薄膜，以及形成保护膜的步骤，其中在淋浴后形成含有其它金属的保护膜 在成膜步骤之前的头部。
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公开(公告)号：KR1020060091006A
公开(公告)日：2006-08-17
申请号：KR1020067014884
申请日：2003-12-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/455 , H01L21/205
CPC classification number: C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
Abstract: A film-forming method wherein a certain thin film is formed on a substrate to be processed (W) using plasma CVD comprises first and second steps performed alternately at least once. In the first step, a first plasma is generated in a process chamber (51) in which the substrate (W) is housed while supplying a compound gas containing a component for the thin film and a reducing gas into the process chamber (51). In the second step following the first step, a second plasma is generated in the process chamber (51) while supplying the reducing gas into the process chamber (51).
Abstract translation: 使用等离子体CVD在被处理基板（W）上形成某个薄膜的成膜方法包括交替进行至少一次的第一和第二工序。 在第一步骤中，在容纳基板（W）的处理室（51）中产生第一等离子体，同时向处理室（51）提供含有薄膜成分的复合气体和还原气体。 在第一步骤之后的第二步骤中，在处理室（51）中产生第二等离子体，同时将还原气体供应到处理室（51）中。
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公开(公告)号：KR101396624B1
公开(公告)日：2014-05-16
申请号：KR1020097026131
申请日：2008-06-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/3205
CPC classification number: H01L23/53238 , C23C14/18 , C23C16/045 , C23C16/06 , H01L21/28556 , H01L21/76843 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
Abstract: 오목부(6)를 갖는 절연층(4)이 표면에 형성된 피처리체 W에 대하여 박막을 형성하는 성막 방법이 개시된다. 오목부 내의 표면을 포함하는 피처리체의 표면에 Ti 함유 배리어층(12)을 형성하는 배리어층 형성 공정과, 배리어층상에 Ru 함유 시드층(16)을 CVD에 의해 형성하는 시드층 형성 공정과, 시드층상에 Cu 함유 보조 시드층(164)을 스퍼터링에 의해 형성하는 보조 시드층 형성 공정을 순차적으로 실행한다. 이에 따라, 피처리체 전면에 걸쳐, 선폭 또는 홀 직경이 작은 오목부 혹은 어스펙트비가 높은 오목부에 대하여 충분한 패딩을 행하는 것이 가능해진다.
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公开(公告)号：KR1020100049704A
公开(公告)日：2010-05-12
申请号：KR1020107009366
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/285 , H01L21/68
CPC classification number: H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
Abstract: A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16).
Abstract translation: 在用于半导体处理的成膜容器（4）中设置感受器装置。 所述基座装置包括：基座（16），其具有顶面，待处理的晶片（W）被放置在所述上表面上;从所述顶面向下延伸的侧面和设置在所述基座中的加热器， 以通过顶表面来加热晶片（W）。 基座（16）的顶表面和侧表面涂覆有CVD预涂层（28）。 预涂层（28）的厚度足够大以使来自加热器（18）的热量基本饱和并从基座（16）的顶表面和侧表面辐射。
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公开(公告)号：KR1020100024416A
公开(公告)日：2010-03-05
申请号：KR1020097026131
申请日：2008-06-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/3205
CPC classification number: H01L23/53238 , C23C14/18 , C23C16/045 , C23C16/06 , H01L21/28556 , H01L21/76843 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
Abstract: Disclosed is a filming method for forming a thin film on a treating object (W) which has an insulating layer (4) formed with a recess (6) on its surface. In the filming method, there are sequentially executed the barrier layer forming step of forming a Ti-containing barrier layer (12) on the surface of the treating object including the surface in the recess, the seed layer forming step of forming a Ru-containing seed layer (16) over the barrier layer by a CVD, and the auxiliary seed layer forming step of forming a Cu-containing auxiliary seed layer (164) over the seed layer by a sputtering. All over the surface of the treating object, therefore, a sufficient padding can be made on either the recess having a small line width or hole diameter or the recess having a high aspect ratio.
Abstract translation: 公开了一种在其表面上形成有凹部（6）的绝缘层（4）的处理对象（W）上形成薄膜的成膜方法。 在成膜方法中，依次执行阻挡层形成工序，在包含凹部的表面的处理对象物的表面上形成含Ti势垒层（12），种子层形成工序形成含Ru的阻挡层 种子层（16），并且通过溅射在种子层上形成含Cu辅助种子层（164）的辅助晶种层形成步骤。 因此，在处理对象的整个表面上，可以在具有小线宽度或孔直径的凹部或具有高纵横比的凹部中的任一个上形成足够的填充。
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