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公开(公告)号：KR101979068B1
公开(公告)日：2019-05-15
申请号：KR1020160150824
申请日：2016-11-14
Applicant: 한국과학기술원
IPC: H01L21/033 , H01L21/311 , H01L21/768 , H01L21/56 , H01L21/306 , H01L21/3065
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Patent Agency Ranking
公开(公告)号：KR101131414B1
公开(公告)日：2012-04-03
申请号：KR1020100088688
申请日：2010-09-10
Applicant: 한국과학기술원
Abstract: PURPOSE: A radio frequency device and a method of fabricating the same are provided to reduce the contact resistance of a guard ring contact plug by forming an impurity doping region in the surface of the guard ring. CONSTITUTION: A substrate(102) comprises a first area(102a) and a second part(102b). A semiconductor layer(106) is formed on the first area of the substrate. A buried insulating layer(104) is formed between the substrate and the semiconductor layer. A plurality of inversion blocking layers(120a) is formed on the second region of the substrate. A field insulating layer(125) covers the side of the semiconductor layer and the top side of the inversion blocking layer.
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公开(公告)号：KR101892357B1
公开(公告)日：2018-08-27
申请号：KR1020160131381
申请日：2016-10-11
Applicant: 한국과학기술원
IPC: H04B10/548 , H01Q3/26 , H04B10/61
CPC classification number: H04B10/25752 , G02B6/2861 , G02F1/0147 , G02F1/025 , G02F1/2255 , G02F2001/0156 , G02F2001/212 , H04B10/501 , H04B10/516
Abstract: 일실시예에따르면, 실리콘반도체를기반으로실리콘단일반도체공정(monolithic integration)에의해제작되어, 위상배열안테나의신호처리를위한실제시간지연을이용하는광 빔포밍네트워크(Photonic Beam Forming Network; PBFN) 칩은광원으로부터발생되는광 파워를균등한파워로분기하는적어도하나의파워스플리터(Power splitter); 상기적어도하나의파워스플리터를이용하여, 복수의안테나들로부터송수신되는복수의 RF 신호들을복수채널의광 신호들로변경하는복수의 MZM(Mach-Zehnder Modulator) 광변조기들; 상기복수채널의광 신호들에대해상기복수의안테나들별로시간지연을보상또는조절하는복수의 TTD(True Time Delay) 소자들; 상기복수채널의광 신호들이결합된단일광 신호또는상기복수채널의광 신호들을 RF 신호로변경하는광 검출기(Photodetector); 및상기적어도하나의파워스플리터, 상기복수의 MZM 광변조기들, 상기복수의 TTD 소자들및 상기광 검출기각각을연결하는광 도파로를포함한다.
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公开(公告)号：KR101885766B1
公开(公告)日：2018-08-06
申请号：KR1020160057040
申请日：2016-05-10
Applicant: 한국과학기술원
Abstract: 본개시내용의구체예에따르면, 외력또는외부압력의작용시 3차원적구조를갖는센서자체의변형에따른저항변화를감지하는방식으로작동하여다양한분야, 예를들면세포의거동을모니터링을수반하는기술분야에효과적으로적용할수 있는스트레인센서및 이의제조방법이개시된다.
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公开(公告)号：KR101622388B1
公开(公告)日：2016-05-19
申请号：KR1020150146787
申请日：2015-10-21
Applicant: 한국과학기술원
Abstract: 본발명은첨예도가높은오목부를가지는마이크로니들스탬프를구현하기위한제조방법으로서, 실리콘기판을준비하는단계; 상기실리콘기판상에하드마스크패턴을형성하는단계; 상기하드마스크패턴에노출된상기실리콘기판을식각하는단계로서, 상기실리콘기판내에제 1 내부공간을형성하도록상기실리콘기판을제 1 차식각하는단계; 및상기하드마스크패턴에노출된상기실리콘기판을식각하는단계로서, 상기제 1 내부공간의하부에상기제 1 내부공간보다횡단면적이좁은제 2 내부공간을형성하도록상기실리콘기판을제 2 차식각하는단계;를포함하되, 상기실리콘기판을제 1 차식각하는단계와상기실리콘기판을제 2 차식각하는단계는식각가스의상대적비율, 공정압력및 소스/바이어스파워중에서적어도어느하나의공정조건이서로다른것을특징으로한다.
Abstract translation: 本发明涉及具有高峰度的凹部的微针印模的制造方法。 该方法包括以下步骤：制备硅衬底; 在硅衬底上产生硬掩模图案; 首先蚀刻硅衬底以在暴露于硬掩模图案的硅衬底中形成第一内部空间; 其次蚀刻暴露于硬掩模图案的硅衬底，以在第一内部空间的下侧形成具有比第一内部空间更窄的横截面面积的第二内部空间。 首先蚀刻硅衬底的步骤不同于关于蚀刻气体的相对比例，过程压力和源极/偏置功率之类的工艺条件中的至少一个的第二次蚀刻硅衬底的步骤。
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公开(公告)号：KR1020120054459A
公开(公告)日：2012-05-30
申请号：KR1020100115846
申请日：2010-11-19
Applicant: 한국과학기술원
CPC classification number: H01L21/76251 , H01L21/76224
Abstract: PURPOSE: A method for manufacturing a radio frequency device and a semiconductor device is provided to reduce radio frequency loss by preventing by forming an inversion blocking layer. CONSTITUTION: A complex substrate having a laminating structure of a body, a buried insulating layer(104), and a semiconductor layer is provided. A trench is formed by etching the buried insulating layer and the semiconductor layer. An inversion blocking layer(120) is formed on the body within the trench. A burying protective layer(122) is formed on the inversion blocking layer in order to fill the trench. A first part of the inversion blocking layer of the semiconductor layer outside the trench is eliminated. The burying protective layer and the inversion blocking layer are flattered in order to protect a second part of the inversion blocking layer within the trench through the burying protective layer.
Abstract translation: 目的：提供一种制造射频装置和半导体装置的方法，以通过形成反转阻挡层来防止射频损失。 构成：提供具有本体层叠结构的复合衬底，埋层绝缘层（104）和半导体层。 通过蚀刻掩埋绝缘层和半导体层形成沟槽。 在沟槽内的主体上形成反转阻挡层（120）。 在反转阻挡层上形成埋入保护层（122）以填充沟槽。 沟槽外的半导体层的反转阻挡层的第一部分被消除。 掩埋保护层和反转阻挡层被覆盖以便通过掩埋保护层保护沟槽内的反转阻挡层的第二部分。
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