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公开(公告)号：KR100598446B1
公开(公告)日：2006-07-11
申请号：KR1020040099920
申请日：2004-12-01
Applicant: 한국전자통신연구원
CPC classification number: H01P1/2013 , H01P1/203
Abstract: 본 발명은 밀리미터파 대역 평면형 필터용 에어 캐비티 모듈에 관한 것으로, 보다 상세하게는 밀리미터파 대역에서 동작하는 평면형 필터와, 상기 평면형 필터가 실장되도록 일측부가 개방된 에어 캐비티와, 상기 평면형 필터로부터 입/출력되는 신호가 전달되도록 상기 에어 캐비티의 개방된 일측부를 폐쇄시키는 에어 캐비티 커버를 포함함으로써, 전송 손실을 줄이고 방사 손실을 감소시켜 밀리미터파 대역에서 동작하는 필터의 특성을 향상시킬 수 있는 효과가 있다.
밀리미터파, 평면형 필터, 에어 캐비티, 에어 캐비티 커버, 전송 손실, 방사 손실-
公开(公告)号：KR100444178B1
公开(公告)日：2004-08-09
申请号：KR1020010085166
申请日：2001-12-26
Applicant: 한국전자통신연구원
IPC: C04B35/04 , C04B35/443 , H01B3/12
CPC classification number: C04B35/443 , C04B2235/3203 , C04B2235/77
Abstract: The present invention relates to a ceramic dielectric material for communication components, which can be used in the microwave and millimeter wave frequency band. More particularly, the present invention relates to a dielectric ceramic composition for the microwave/millimeter wave frequency band having a very high quality factor and a low dielectric constant, and a method of manufacturing the dielectric ceramic using the same. The dielectric ceramic composition consists of spinel (MgAl2O4) as a major component and a small amount of lithium carbonate (Li2CO3) as a sub composition with a specific composition formula. The dielectric ceramic is manufactured from magnesia (MgO), alumina (Al2O3) and lithium carbonate (Li2CO3) as raw materials and through the ceramic processing of calcination, shaping and sintering. The obtained dielectric ceramic has the quality factor (Qxf) of 160,000 and the dielectric constant (epsir) of 8.5. Composition formula: MgAl2O4+xLi2CO3(mol %) where, 0
Abstract translation: 用于通信部件的陶瓷介电材料技术领域本发明涉及可用于微波和毫米波频带的用于通信部件的陶瓷介电材料。 更具体地，本发明涉及具有非常高品质因数和低介电常数的用于微波/毫米波频带的电介质陶瓷组合物以及使用该电介质陶瓷组合物的制造方法。 介电陶瓷组合物由作为主要组分的尖晶石（MgAl 2 O 4）和作为具有特定组成式的子组合物的少量碳酸锂（Li 2 CO 3）组成。 介电陶瓷由氧化镁（MgO），氧化铝（Al 2 O 3）和碳酸锂（Li 2 CO 3）为原料，并通过煅烧，成型和烧结的陶瓷加工制成。 获得的电介质陶瓷具有160,000的品质因数（Qxf）和8.5的介电常数（epsir）。 组成式：MgAl 2 O 4 + xLi 2 CO 3（摩尔％）其中，0
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公开(公告)号：KR1020030088918A
公开(公告)日：2003-11-21
申请号：KR1020020026699
申请日：2002-05-15
Applicant: 한국전자통신연구원
IPC: H04N5/52
CPC classification number: H01P5/10
Abstract: PURPOSE: An S/N enhancer is provided to easily realize impedance matching with an external circuit, utilize an S/N(Signal to Noise) enhancer under low power as well as high power, and reduce the size of the S/N enhancer. CONSTITUTION: A balun coupler(410) receives one input signal for distributing the input signal as two outputs equal in power and different in phase at an angle of 180 deg. A saturation magnetostatic wave filter(420) receives one signal among two output signals from the balun coupler for converting the same to magnetostatic wave and inversely converting the magnetostatic wave, and saturates input power over a noise level. A linear magnetostatic wave filter(430) receives the other signal among two output signals from the balun coupler for converting the same to magnetostatic wave and inversely converting the magnetostatic wave, and converts input power into magnetostatic wave by linear energy. A power synthesizer(440) synthesizes signals output from the saturation magnetostatic wave filter and the linear magnetostatic wave filter.
Abstract translation: 目的：提供S / N增强器，以便轻松实现与外部电路的阻抗匹配，在低功耗和高功率下利用S / N（信噪比）增强器，并减小S / N增强器的尺寸。 构成：平衡 - 不平衡变压器耦合器（410）接收一个输入信号，用于将输入信号分配为功率相等的两个输出，并且以180度的角度相位不同。 饱和静磁波滤波器（420）在来自平衡 - 不平衡转换器的两个输出信号之间接收一个信号，以将其转换成静磁波并逆向转换静磁波，并使输入功率在噪声水平上饱和。 线性静磁波滤波器（430）接收来自平衡 - 不平衡转换器的两个输出信号中的另一信号，以将其转换为静磁波，并逆向转换静磁波，并通过线性能量将输入功率转换成静磁波。 电力合成器（440）合成从饱和静磁波滤波器和线性静磁波滤波器输出的信号。
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公开(公告)号：KR1020030056651A
公开(公告)日：2003-07-04
申请号：KR1020010086925
申请日：2001-12-28
Applicant: 한국전자통신연구원
IPC: H04L12/851
CPC classification number: H04L47/2441 , H04L69/22
Abstract: PURPOSE: A mixed active network model and a packet processing method in an active network model are provided to classify packets into an 'Aflow' packet, a 'non-Aflow' packet, and a 'sigAflow' packet according to the continuity of a packet delivery cycle, so as to actively load resources necessary for performing active packets on an active node. CONSTITUTION: If an optional packet is received to a packet classifier(S200), the packet classifier decides whether a protocol field of a header of the packet is set as active(S202). If not, the packet classifier regards the received packet as a general IP(Internet Protocol) packet(S204), and if set as active, the packet classifier regards the received packet as an active packet(S206). The active packet is provided to a flow classifier(S208). The flow classifier decides whether the packet matches with a demux key field(S210). If so, the flow classifier classifies the packet as an 'Aflow' packet(S212). If the packet does not match with the demux key field, a performance environment block detects a type field of the active packet header(S214). If a detected type value is '0'(S216), the performance environment block classifies the packet as a 'sigAflow' packet(S218). And if the detected type value is '2'(S220), the performance environment block classifies the packet as a 'non-Aflow' packet(S222).
Abstract translation: 目的：提供一种主动网络模型中的混合有源网络模型和分组处理方法，以根据分组的连续性将分组分类为“Aflow”分组，“非Aflow”分组和“sigAflow”分组 交付周期，以便主动加载在主动节点上执行活动分组所需的资源。 构成：如果对分组分类器接收到可选分组（S200），则分组分类器决定分组报头的协议字段是否被设置为活动（S202）。 如果不是，则分组分类器将接收到的分组视为通用IP（因特网协议）分组（S204），如果设置为活动，则分组分类器将接收到的分组视为活动分组（S206）。 将活动分组提供给流分类器（S208）。 流分类器决定分组是否与解码密钥字段匹配（S210）。 如果是，则流分类器将分组分类为“Aflow”分组（S212）。 如果分组与解密密钥字段不匹配，则性能环境块检测活动分组报头的类型字段（S214）。 如果检测到的类型值为“0”（S216），则性能环境块将该分组分类为“sigAflow”分组（S218）。 如果检测到的类型值为“2”（S220），则性能环境块将该分组分类为“非Aflow”分组（S222）。
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公开(公告)号：KR1020030054759A
公开(公告)日：2003-07-02
申请号：KR1020010085166
申请日：2001-12-26
Applicant: 한국전자통신연구원
IPC: C04B35/04 , C04B35/443 , H01B3/12
CPC classification number: C04B35/443 , C04B2235/3203 , C04B2235/77
Abstract: PURPOSE: A dielectric ceramic composition based on spinel is provided, which has high Q value and low dielectric constant for communication devices used in the microwave/millimeter wave frequency range. CONSTITUTION: The dielectric ceramic composition containing spinel(MgAl2O4) and Li2CO3 as main component and auxiliary component, respectively is expressed by a composition formula of MgAl2O4 + xLi2CO3, wherein, x is in the range of 0
Abstract translation: 目的：提供一种基于尖晶石的介电陶瓷组合物，其对于微波/毫米波频率范围内使用的通信设备具有高Q值和低介电常数。 构成：含有尖晶石（MgAl 2 O 4）和Li 2 CO 3作为主要成分和辅助成分的介电陶瓷组合物分别由MgAl 2 O 4 + xL 2 CO 3的组成式表示，其中x在0
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Patent Agency Ranking
公开(公告)号：KR1020170106576A
公开(公告)日：2017-09-21
申请号：KR1020160029526
申请日：2016-03-11
Applicant: 한국전자통신연구원
CPC classification number: H01L2224/49175
Abstract: 본발명은전력소자가구비된기판에관한것이다. 본발명에따르면, 한쌍의제1 마커및 한쌍의제2 마커가형성된메탈캐리어, 상기메탈캐리어상에구비되며, 입력단이상기한 쌍의제1 마커중 어느하나에대응되고, 출력단이상기한 쌍의제1 마커중 나머지하나에대응되도록배치되는전력소자, 상기전력소자의일 측에배치되는입력정합부및 상기전력소자의타 측에배치되는출력정합부를포함하며, 상기한 쌍의제2 마커는상기한 쌍의제1 마커의외측에형성되고, 상기입력정합부의일 측면은상기제2 마커중 어느하나에대응되도록배치되며, 상기출력정합부의일 측면은상기제2 마커중 나머지하나에대응되도록배치되는, 전력소자가구비된기판이제공된다.
Abstract translation: 具有电源的基板技术领域本发明涉及一种设有电源的基板。 根据本发明，一对第一标记物和一对金属载体2，一标记形成时，它被设置在所述金属载体上，该输入级移相器对第一标记中的一个的相应的一个，输出移相器对第一 并且输出匹配部分设置在电源的另一侧上，其中该对第二标记布置在电源的另一侧上， 其中，所述输入匹配单元的一侧对应于所述第二标记中的一个，所述输出匹配单元的一侧对应于所述第二标记中的另一个， 提供衬底。
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公开(公告)号：KR1020170095453A
公开(公告)日：2017-08-23
申请号：KR1020160016412
申请日：2016-02-12
Applicant: 한국전자통신연구원
CPC classification number: H01Q9/0407 , H01Q1/50 , H01Q9/0442
Abstract: 본발명은패치안테나에관한것으로, 본발명의일 실시예에따른패치안테나는, 복수의유전체층들이적층된다층기판; 상기다층기판의중심영역의외부에서, 상기복수의유전체층들사이에개재된적어도하나의금속패턴층; 상기다층기판의상부면상에배치되고, 상기중심영역내에위치하는안테나패치; 상기다층기판의하부면에배치된접지층; 상기복수의유전체층들을관통하여상기금속패턴층과상기접지층을전기적으로연결하고, 상기중심영역을에워싸는복수의연결비아패턴들; 상기다층기판의상부면상에배치되고상기중심영역외부에위치하는제1 전송선로부와, 상기다층기판의상부면상에배치되고상기중심영역내에위치하는제2 전송선로부를포함하는전송선로; 및상기다층기판의중심영역내에서상기제2 전송선로부의아래에위치하는임피던스변환기를포함할수 있다.
Abstract translation: 本发明涉及贴片天线，并且根据本发明实施例的贴片天线包括：堆叠的多个介电层; 至少一个金属图案层，介于多层基板的中心区域外的多个介电层之间; 天线贴片，设置在所述多层基板的上表面上并位于所述中央区域中; 设置在多层基板的下表面上的接地层; 多个连接通孔图案，其通过所述多个电介质层电连接所述金属图案层和所述接地层并且围绕所述中心区域; 第一传输线部分，其设置在所述多层基板的上表面上并且位于所述中心区域的外侧;以及第二传输线部分，其设置在所述多层基板的上表面上并且位于所述中央区域中; 以及位于多层衬底的中心区域内的第二传输线部分下方的阻抗转换器。
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公开(公告)号：KR1020170086907A
公开(公告)日：2017-07-27
申请号：KR1020160006517
申请日：2016-01-19
Applicant: 한국전자통신연구원
IPC: H01L21/02 , H01L21/04 , H01L21/324 , H01L21/3215
Abstract: 본발명은반도체소자의선택적도핑방법에관한것이다. 이에따른본 발명은, 반도체소자의선택적도핑방법으로, 기판상에증착된희생층상에도핑영역을정의하기위한마스크층을형성하는단계, 상기마스크층 상에증착되는도펀트물질을상기기판내부로확산하여도핑영역을형성하는제1 열처리단계, 상기도핑영역으로확산된도펀트물질을활성화하는제2 열처리단계및 상기희생층을제거하는단계를포함하는것을특징으로하는선택적도핑방법에관한것이다.
Abstract translation: 本发明涉及一种半导体器件的选择性掺杂方法。 在本发明中，半导体器件的选择性掺杂方法，包括：形成掩模层，以限定一个掺杂区域沉积在基底上的牺牲层上，使掺杂剂扩散的材料被沉积在掩模层到衬底按照 第一热处理以形成一个掺杂区，用于激活掺杂剂材料扩散到掺杂区和一个选择性掺杂方法，包括移除所述牺牲层的步骤的第2热处理工序。
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公开(公告)号：KR1020170059520A
公开(公告)日：2017-05-31
申请号：KR1020150163258
申请日：2015-11-20
Applicant: 한국전자통신연구원
IPC: H01L29/43 , H01L29/778 , H01L29/45 , H01L29/772 , H01L21/02
Abstract: 본발명의실시예에따른전계효과트랜지스터는서로마주하는제1 면및 제2 면을포함하는활성층; 상기활성층의상기제1 면상에형성되고, 상기활성층의상기제1 면을노출하는제1 개구영역을포함하는캡핑층; 상기캡핑층상에형성된소스오믹전극및 드레인오믹전극; 상기활성층의상기제1 면상부에배치되고, 상기제1 개구영역내부에배치된일부를포함하는전면게이트; 상기활성층의상기제2 면상부에배치되고, 상기소스오믹전극및 상기드레인오믹전극사이의상기활성층의상기제2 면을노출하는제2 개구영역을포함하는반도체기판; 및상기활성층의상기제2 면상부에배치되고, 상기제2 개구영역내부에배치되어상기전면게이트에중첩된후면게이트를포함할수 있다.
Abstract translation: 根据本发明实施例的场效应晶体管包括：有源层，包括彼此面对的第一表面和第二表面; 覆盖层，形成在有源层的第一表面上并且包括暴露有源层的第一表面的第一开口区域; 形成在覆盖层上的源欧姆电极和漏欧姆电极; 布置在有源层的第一侧上并且包括设置在第一开口区内的部分的前栅极; 半导体衬底，所述半导体衬底设置在所述有源层的所述第二表面上并且包括暴露所述源极欧姆电极和所述漏极欧姆电极之间的所述有源层的所述第二表面的第二开口区域; 以及布置在有源层的第二侧之上并设置在第二开口区域内以与前栅极重叠的后栅极。
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公开(公告)号：KR1020130126840A
公开(公告)日：2013-11-21
申请号：KR1020120047360
申请日：2012-05-04
Applicant: 한국전자통신연구원
CPC classification number: H01L29/2003 , H01L24/05 , H01L24/06 , H01L24/16 , H01L29/41758 , H01L29/66431 , H01L29/66462 , H01L29/7787 , H01L2224/0401 , H01L2224/05554 , H01L2224/05568 , H01L2224/056 , H01L2224/06135 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/81815 , H01L2924/00014
Abstract: The present invention relates to a GaN (gallium nitride)-based compound power semiconductor device and a manufacturing method thereof. The gallium nitride-based compound power semiconductor device comprises a gallium nitride-based compound element growing on a wafer; a contact pad including a source, a drain and a gate on the gallium nitride-based compound element; a module substrate to which the gallium nitride-based compound element is bonded with a flip chip; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate to bond the contact pad and the bonding pad with the flip chip. According to the present invention, processing costs are low by forming the bump on the substrate with a front process (wafer level). According to the present invention, heat generated in an AlGaN HEMT element is quickly discharged becuase a subsource contact pad and subdrain contact pad of the substrate is formed on the substrate. According to the present invention, the heat generated in the AlGaN HEMT element is effectively discharged by forming a via hole on the substrate and filling the via hole with conductive metal.
Abstract translation: 本发明涉及一种GaN（氮化镓））复合功率半导体器件及其制造方法。 氮化镓基复合功率半导体器件包括在晶片上生长的氮化镓基化合物元素; 接触焊盘，其包括在所述氮化镓基复合元件上的源极，漏极和栅极; 所述氮化镓系复合元件与倒装芯片接合的模块基板; 形成在所述模块基板上的焊盘; 以及形成在模块基板的焊盘上的凸块，以将接触焊盘和焊盘与倒装芯片接合。 根据本发明，通过用前处理（晶片级）在基板上形成凸块来加工成本低。 根据本发明，在AlGaN HEMT元件中产生的热量由于子源接触焊盘而快速放电，并且在衬底上形成衬底的亚临界接触焊盘。 根据本发明，通过在基板上形成通孔并用导电金属填充通孔来有效地排出在AlGaN HEMT元件中产生的热量。
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