中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

34 records (took 0.032 seconds)

    산화물계 나노 구조물의 제조 방법
    11.
    发明授权
    산화물계 나노 구조물의 제조 방법 失效
    形成氧化物基纳米结构材料的方法

    公开(公告)号：KR100825765B1

    公开(公告)日：2008-04-29

    申请号：KR1020070036582

    申请日：2007-04-13

    Applicant: 한국전자통신연구원

    Inventor： 김상협 ,  이선영 ,  맹성렬 ,  명혜진

    IPC: B82B3/00 ,  B82B1/00 ,  B82Y40/00

    CPC classification number: C01G23/047 ,  B82Y30/00 ,  C01G9/02 ,  C01G17/02 ,  C01G23/053 ,  C01G25/02 ,  C01G28/02 ,  C01G31/02 ,  C01G33/00 ,  C01G37/02 ,  C01P2004/64 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1295

    Abstract: A method for manufacturing oxide-based nano structures is provided to form nano structures having a uniform composition reproducibly in a relatively low cost. A method for manufacturing oxide-based nano structures includes the steps of: (10) coating the surface of a substrate with a mixture solution in which an organic material precursor comprising M(wherein, M is a transition metal or semimetal element) is dissolved in an organic solvent; (20) heat-treating the mixture solution-coated substrate to form nano nuclei having a composition of MxOy(wherein, x is an integer of 1-3 and y is an integer of 1-6) on the substrate; (30) growing the nano nuclei to form nano structures having a composition of MxOy while supplying the M-containing reaction precursor to the nano nuclei; and (40) heat-treating the nano structures. Further, the M is one transition metal selected from a group consisting of Ti, V, Cr, Zn, Y, Zr and Nb.

    Abstract translation: 提供一种制造基于氧化物的纳米结构体的方法，以相当低的成本形成具有均匀组成的纳米结构。 一种制造基于氧化物的纳米结构体的方法包括以下步骤：（10）用其中溶解有M（其中，M是过渡金属或半金属元素）的有机材料前体溶解在其中的混合溶液涂覆基材表面 有机溶剂; （20）对所述混合溶液涂布的基材进行热处理，以在所述基材上形成组成为M x O y的纳米核（其中，x为1-3的整数，y为1-6的整数）; （30）生长纳米核以形成具有MxOy组成的纳米结构，同时向纳米核提供含M反应前体; 和（40）对纳米结构进行热处理。 此外，M是选自由Ti，V，Cr，Zn，Y，Zr和Nb组成的组中的一种过渡金属。

    인듐 틴 산화물 전자빔 레지스트의 합성 방법 및 이를이용한 인듐 틴 산화물 패턴 형성 방법
    12.
    发明授权
    인듐 틴 산화물 전자빔 레지스트의 합성 방법 및 이를이용한 인듐 틴 산화물 패턴 형성 방법 失效
    氧化锡（ITO）电子束电阻的合成方法和使用它的ITO的图案形成方法

    公开(公告)号：KR100819062B1

    公开(公告)日：2008-04-03

    申请号：KR1020070026774

    申请日：2007-03-19

    Applicant: 한국전자통신연구원

    Inventor： 김기출 ,  맹성렬 ,  신성진 ,  강대준

    IPC: C01G19/00 ,  C01G15/00

    CPC classification number: C01G19/00 ,  C01P2002/70 ,  C01P2002/84 ,  C01P2004/03 ,  C01P2006/40 ,  C23C18/1216 ,  C23C18/14 ,  G03F7/0042 ,  Y10S430/143

    Abstract: A method for synthesizing an indium tin oxide electron beam resist and a method for forming an ITO pattern are provided to form a pattern in various forms according to resolution of an electron beam recorder, and solve problems caused during an etching process or lift-off process. A method for synthesizing an indium tin oxide(ITO) electron beam resist includes the steps of: providing indium chloride tetrahydrate and tin chloride dihydrate; and dissolving the indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol to synthesize the ITO electron beam resist. A method for forming an ITO pattern includes the steps of: (200) synthesizing the ITO electron beam resist; (220) coating a substrate with the synthesized ITO electron beam resist to form an ITO electron beam resist film; (240,260) forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film using an electron beam recorder; and (280) heat-treating the ITO electron beam resist pattern to form the ITO pattern. Further, the 2-ethoxy ethanol is used as solvent and stabilizer.

    Abstract translation: 提供了一种用于合成铟锡氧化物电子束抗蚀剂的方法和用于形成ITO图案的方法，以根据电子束记录器的分辨率形成各种形式的图案，并且解决在蚀刻处理或剥离过程中引起的问题 。 铟锡氧化物（ITO）电子束抗蚀剂的合成方法包括以下步骤：提供氯化铟四水合物和氯化锡二水合物; 并将氯化铟四水合物和氯化锡二水合物溶解在2-乙氧基乙醇中以合成ITO电子束抗蚀剂。 一种形成ITO图形的方法包括以下步骤：（200）合成ITO电子束抗蚀剂; （220）用合成的ITO电子束抗蚀剂涂覆基板以形成ITO电子束抗蚀膜; （240,260），通过使用电子束记录器对ITO电子束抗蚀剂膜进行图案化而形成ITO电子束抗蚀剂图案; 和（280）对ITO电子束抗蚀剂图案进行热处理以形成ITO图案。 此外，使用2-乙氧基乙醇作为溶剂和稳定剂。

    이산화티탄이 균일하게 코팅된 탄소나노튜브의 제조 방법
    15.
    发明公开
    이산화티탄이 균일하게 코팅된 탄소나노튜브의 제조 방법 失效
    用二氧化钛涂覆的碳纳米管的制备方法

    公开(公告)号：KR1020080085368A

    公开(公告)日：2008-09-24

    申请号：KR1020070026775

    申请日：2007-03-19

    Applicant: 한국전자통신연구원

    Inventor： 김기출 ,  맹성렬 ,  김상협 ,  박래만 ,  박종혁 ,  최영진 ,  강대준

    IPC: B82B3/00 ,  B82Y40/00 ,  C01B31/02

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/34 ,  C01B2202/36 ,  B82B3/0009 ,  B82B3/0061 ,  C01G23/047

    Abstract: A method for preparing carbon nanotubes coated with titanium dioxide is provided to produce the carbon nanotubes which have characteristics of both carbon nanotubes and titanium dioxide nanowires and are usable as gas sensors, photocatalysts, etc. A method for preparing carbon nanotubes(16') coated with titanium dioxide includes the steps of: (a) functionalizing carbon nanotubes with hydrophilic groups; (b) mixing the hydrophilically functionalized carbon nanotubes with a solution containing a titanium dioxide precursor; (c) purifying carbon nanotubes coated with the titanium dioxide precursor from a mixed solution of the carbon nanotubes and titanium dioxide precursor; and (d) heat-treating the purified carbon nanotubes coated with the titanium dioxide precursor. Further, the carbon nanotubes are single-wall carbon nanotubes or multi-wall carbon nanotubes.

    Abstract translation: 提供了一种制备涂覆有二氧化钛的碳纳米管的方法，以制备具有碳纳米管和二氧化钛纳米线特性的碳纳米管，并且可用作气体传感器，光催化剂等。一种制备涂覆有碳纳米管的碳纳米管（16'）的方法 二氧化钛包括以下步骤：（a）用亲水基团官能化碳纳米管; （b）将亲水官能化的碳纳米管与含有二氧化钛前体的溶液混合; （c）从碳纳米管和二氧化钛前体的混合溶液中净化涂覆有二氧化钛前体的碳纳米管; 和（d）对涂覆有二氧化钛前体的纯化碳纳米管进行热处理。 此外，碳纳米管是单壁碳纳米管或多壁碳纳米管。

    가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법
    16.
    发明授权
    가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법 有权
    用于形成用于检测气体和生物材料的传感器的方法，包括传感器的集成电路以及用于制造集成电路的方法

    公开(公告)号：KR100799577B1

    公开(公告)日：2008-01-30

    申请号：KR1020060083570

    申请日：2006-08-31

    Applicant: 한국전자통신연구원

    Inventor： 윤두협 ,  맹성렬 ,  김상협 ,  박종혁 ,  강광용 ,  이상훈 ,  주철원

    IPC: G01N27/12 ,  B82Y15/00

    CPC classification number: G01N27/122 ,  G01N27/127

    Abstract: A method for manufacturing a sensor for detecting gases and biochemical materials, an integrated circuit including the sensor, and a method for manufacturing the integrated circuit are provided to prevent degradation of MOSFET(Metal Oxide Semiconductor Field Effect Transistor)-based unit elements by integrating a plurality of compact sensors for detecting gases and biochemical materials with multi-functioning unit elements in the same circuit by low temperature process. An integrated circuit(20) comprises a semiconductor substrate(200), a sensor for detecting gases and biochemical materials(250), a heater(210), and a signal processing unit(220). The sensor for detecting gases and biochemical materials comprises a pair of electrodes(252) provided within a first area on the semiconductor substrate, and a metal oxide nano-structure layer(254) provided on the surface of the electrodes. The heater is provided on a second area adjacent the sensor on the semiconductor substrate. The signal processing unit is made with MOSFET elements provided in a third area on the semiconductor substrate to process a predetermined signal obtained by changes of current flowing via the electrodes of the sensor. A method for manufacturing the integrated circuit comprises the steps of: forming a plurality of MOSFET elements on the semiconductor substrate; and forming the sensor for detecting gases and biochemical materials on the MOSFET elements; wherein the steps for forming the sensor comprises; forming a passivation film(240) on the MOSFET elements; forming at least a pair of electrodes on the passivation film; and forming a metal oxide nano-structure layer over the surface of the electrodes at the normal temperature to 400°C.

    Abstract translation: 一种用于制造用于检测气体和生化材料的传感器的方法，包括该传感器的集成电路和一种用于制造集成电路的方法，用于防止基于MOSFET（金属氧化物半导体场效应晶体管）的单位元件的劣化 用于通过低温过程在同一电路中检测具有多功能单元元件的气体和生化材料的多个紧凑型传感器。 集成电路（20）包括半导体衬底（200），用于检测气体和生化材料的传感器（250），加热器（210）和信号处理单元（220）。 用于检测气体和生化材料的传感器包括设置在半导体衬底上的第一区域内的一对电极（252）和设置在电极表面上的金属氧化物纳米结构层（254）。 加热器设置在与半导体衬底上的传感器相邻的第二区域上。 信号处理单元由设置在半导体基板上的第三区域中的MOSFET元件制成，以处理通过经由传感器的电极流动的电流的变化而获得的预定信号。 一种用于制造集成电路的方法包括以下步骤：在半导体衬底上形成多个MOSFET元件; 并形成用于检测MOSFET元件上的气体和生化材料的传感器; 其中用于形成传感器的步骤包括： 在所述MOSFET元件上形成钝化膜（240）; 在钝化膜上形成至少一对电极; 并在常温至400℃的电极表面上形成金属氧化物纳米结构层。

    급격한 금속-절연체 전이 소자 및 그 제조방법
    17.
    发明公开
    급격한 금속-절연체 전이 소자 및 그 제조방법 失效
    使用破坏金属绝缘子过渡的器件及其制造方法

    公开(公告)号：KR1020060064461A

    公开(公告)日：2006-06-13

    申请号：KR1020050039098

    申请日：2005-05-11

    Applicant: 한국전자통신연구원

    Inventor： 윤두협 ,  김현탁 ,  채병규 ,  맹성렬 ,  강광용

    IPC: H01L29/772

    CPC classification number: H01L49/003 ,  H01L29/452

    Abstract: 급격한 금속-절연체 전이 소자 및 그 제조방법에 관한 것이다. 본 발명에서는 급격한 금속-절연체 전이 소자의 전극을 Ni(또는 Cr)/In/Mo(또는 W)/Au의 적층막으로 구성한다. Ni(또는 Cr)/In은 저저항 콘택을 위한 것으로, 열처리 과정시 계면 반응에 의해 형성되는 화합물을 이용하여 급격한 금속-절연체 전이 물질막과 전극 사이의 포텐셜 배리어(potential barrier)를 낮추어 전류 유입 효율을 증가시킨다. 그리고, 고출력 소자 동작시 고온 동작시에도 열적으로 안정되게 하는 역할을 수행한다. Mo(또는 W)는 In과 Au 사이에 도입되어 소자 고온 동작 과정에서 Au의 열 확산에 의한 오믹 특성 저항을 방지한다. 본 발명에 따르면 전극 파탄이 없고 신뢰성이 우수한 급격한 금속-절연체 전이 소자를 제공할 수 있다.

    마이크로 히터를 이용한 금속 산화물 나노 소재의 선택적증착방법 및 이를 이용한 가스센서
    20.
    发明公开
    마이크로 히터를 이용한 금속 산화물 나노 소재의 선택적증착방법 및 이를 이용한 가스센서 有权
    使用微加热器和气体传感器的金属氧化物纳米材料的选择性生长方法

    公开(公告)号：KR1020090059568A

    公开(公告)日：2009-06-11

    申请号：KR1020070126490

    申请日：2007-12-07

    Applicant: 한국전자통신연구원

    Inventor： 문승언 ,  박종혁 ,  이홍열 ,  박소정 ,  곽준혁 ,  맹성렬 ,  박강호 ,  김종대

    IPC: H01L21/20 ,  H01L29/84 ,  H01L21/203 ,  H01L21/205

    CPC classification number: C23C16/047 ,  C23C16/40

    Abstract: A method for selectively depositing a metal oxide nano material and a gas sensor using the same are provided to improve crystallization through a rapid thermal process by using a micro heater and to remove the moisture attached on the surface of a nano line. A substrate removing a central region is provided. A membrane(20) is formed in an upper part of the substrate. A micro-heater electrode(40) is formed in the upper part of the membrane of the central region. An insulating layer(30) covering the micro heater is formed in the upper part of the membrane. A sensing electrode(50) is formed in the upper part of the insulating layer of the micro heater electrode part. The metal oxide nano material is deposited in an upper part of the sensing electrode.

    Abstract translation: 提供了选择性地沉积金属氧化物纳米材料的方法和使用其的气体传感器，以通过使用微加热器通过快速热处理来改善结晶，并除去附着在纳米线表面上的水分。 提供去除中心区域的衬底。 膜（20）形成在基板的上部。 微加热器电极（40）形成在中心区域的膜的上部。 覆盖微加热器的绝缘层（30）形成在膜的上部。 感测电极（50）形成在微加热器电极部分的绝缘层的上部。 金属氧化物纳米材料沉积在感测电极的上部。

Patent Agency Ranking