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公开(公告)号：KR1020090065966A
公开(公告)日：2009-06-23
申请号：KR1020070133532
申请日：2007-12-18
Applicant: 한국전자통신연구원
CPC classification number: H01L2251/5323
Abstract: A 3D(Dimensional) image display device using a transparent display panel and a method thereof are provided to output 3D image data like a real object by using a few of transparent display panels. A display unit(320) is formed by stacking more than one transparent display panel(321-330), in which a 2D image is displayed, at intervals. A vibration controller(340) controls reciprocating motion of the display unit along a direction for stacking the transparent display panels as much as the interval. An image controller(310) receives 3D image data. The image controller receives location information of the transparent display panel according to the reciprocating motion from the vibration controller.
Abstract translation: 提供使用透明显示面板的3D（尺寸）图像显示装置及其方法，通过使用少数透明显示面板来输出像真实物体的3D图像数据。 通过以间隔堆叠多于一个的透明显示面板（321-330）形成2D图像来形成显示单元（320）。 振动控制器（340）控制显示单元沿用于堆叠透明显示面板的方向的间隔的间隔的往复运动。 图像控制器（310）接收3D图像数据。 图像控制器根据来自振动控制器的往复运动接收透明显示面板的位置信息。
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公开(公告)号：KR1020070058937A
公开(公告)日：2007-06-11
申请号：KR1020060035654
申请日：2006-04-20
Applicant: 한국전자통신연구원
IPC: H01L27/115 , B82Y10/00
CPC classification number: H01L51/0512 , B82Y10/00
Abstract: An organic semiconductor device is provided to vary a distance between nano particles by using a charge storage medium as a nano particle with a uniform size distribution. An organic semiconductor layer includes a first electrode(210), an electron channel layer(230) formed on the first electrode and a second electrode(250) formed on the electron channel layer. The electron channel layer is composed of a lower organic material layer(231) formed on the first electrode, a nano particle layer(233), and an upper organic material layer(235) formed on the nano particle layer. The nano particle layer is formed on the lower organic material layer, nano particles having a predetermined size such that the nano particles are separated from each other by a predetermined interval. The electron channel layer can maintain a high conductive state and a low conductive state when a voltage is not applied from the outside.
Abstract translation: 提供有机半导体器件以通过使用具有均匀尺寸分布的电荷存储介质作为纳米颗粒来改变纳米颗粒之间的距离。 有机半导体层包括第一电极（210），形成在第一电极上的电子通道层（230）和形成在电子通道层上的第二电极（250）。 电子通道层由在第一电极上形成的下部有机材料层（231），纳米颗粒层（233）和形成在纳米颗粒层上的上部有机材料层（235）组成。 纳米颗粒层形成在下部有机材料层上，具有预定尺寸的纳米颗粒，使得纳米颗粒彼此间隔预定间隔。 当不从外部施加电压时，电子通道层可以保持高导电状态和低导电状态。
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公开(公告)号：KR101943077B1
公开(公告)日：2019-04-17
申请号：KR1020120144276
申请日：2012-12-12
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
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公开(公告)号：KR101849268B1
公开(公告)日：2018-04-18
申请号：KR1020110094568
申请日：2011-09-20
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/7869
Abstract: 본발명은빛과전압스트레스에강한산화물박막트랜지스터및 그의제조방법에관한것으로, 박막트랜지스터의전기적특성, 양전압신뢰성을크게저하시키지않으면서공정온도를높이지않고, 특별한원소를첨가하지않아도광전압신뢰성을용이하고간단하게향상시키기위해서, 기판상에게이트전극을형성하는단계; 상기게이트전극을포함하는상부에게이트절연층을형성하는단계; 상기절연층상에소스전극및 드레인전극을형성하는단계; 상기게이트절연층에의해상기게이트전극과절연되며산화물반도체와확산방지막으로이루어진활성층을형성하는단계; 및상기소스전극및 드레인전극의일부와활성층을포함하는상부에보호층을형성하는단계를포함하며, 상기확산방지막은홀의이동을저하시키고, 이온화된산소공공의확산을방지하기위한특성을갖는것을특징으로한다.
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公开(公告)号：KR1020140078190A
公开(公告)日：2014-06-25
申请号：KR1020120147257
申请日：2012-12-17
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78648 , H01L27/1225 , H01L29/7869
Abstract: A transistor according to an embodiment of the present invention includes a lower gate electrode on a substrate; a lower gate insulating film covering at least a portion of the lower gate electrode; a semiconductor layer provided on the lower gate insulating film and having a source region, a channel region, and a drain region; an upper gate electrode disposed on the semiconductor layer at a position corresponding to the lower gate electrode; an upper gate insulating film on the semiconductor layer; and an upper electrode disposed on the upper gate insulating film and having a coplanar with the upper gate electrode. The channel region is disposed at a position corresponding to the lower gate electrode and the upper gate electrode. The upper electrode may include a first upper electrode connected to the source region and a second upper electrode connected to the drain region.
Abstract translation: 根据本发明的实施例的晶体管包括在基板上的下栅电极; 覆盖所述下栅电极的至少一部分的下栅极绝缘膜; 设置在下部栅极绝缘膜上并具有源极区域，沟道区域和漏极区域的半导体层; 在与所述下栅电极相对应的位置上配置在所述半导体层上的上栅电极; 半导体层上的上栅极绝缘膜; 以及设置在上栅极绝缘膜上并与上栅电极共面的上电极。 沟道区域设置在与下栅电极和上栅电极相对应的位置处。 上部电极可以包括连接到源极区域的第一上部电极和连接到漏极区域的第二上部电极。
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Patent Agency Ranking
公开(公告)号：KR101354648B1
公开(公告)日：2014-01-21
申请号：KR1020100032559
申请日：2010-04-09
Applicant: 한국전자통신연구원
Abstract: 본 발명은 전력 절감형 액자 겸용 텔레비전에 관한 것으로, 본 발명에 따른 전력 절감형 액자 겸용 텔레비전은 제1영상을 표시하는 제1디스플레이; 제2영상을 표시하는 저전력형 제2디스플레이; 및 상기 제1디스플레이를 통해 상기 제1영상을 표시하지 않는 경우 상기 제2디스플레이를 통해 상기 제2영상을 표시하도록 제어하는 디스플레이 제어부를 포함한다.
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公开(公告)号：KR101173212B1
公开(公告)日：2012-08-13
申请号：KR1020080129694
申请日：2008-12-18
Applicant: 한국전자통신연구원
Abstract: 본 발명은 터치 패널 필름 및 그의 제조방법에 관한 것으로, 본 발명에 따른 터치 패널 필름은 플라스틱 재질의 투명 기판; 기판 상에 형성된 금속산화물 씨드층; 및 금속산화물 씨드층 상에 형성된 투명 전도층을 포함하고, 금속산화물 씨드층의 도입으로 투명 전도층, 예를 들면, ITO 층을 저온에서 결정화시킬 수 있고, 이로 인해 투과성에 영향을 미치지 않으면서 내구성을 개선시킬 수 있다.
금속 도핑, 투명, 전도성, 산화물-
公开(公告)号：KR1020100128388A
公开(公告)日：2010-12-08
申请号：KR1020090046757
申请日：2009-05-28
Applicant: 한국전자통신연구원
CPC classification number: G06F3/042 , G06F3/0412 , G06F2203/04103 , H01B5/14
Abstract: PURPOSE: An optical touch screen is provided to be efficiently applied to existing touch screen technology by being operated as a laser pointer. CONSTITUTION: A first electrode(110) is formed on a substrate, and a photocurrent generation semiconductor(120) is formed on the first electrode. A second electrode(130) is formed on the photocurrent generation semiconductor. The photocurrent generation semiconductor electrically connects first and second electrodes in a region to which an optical point is applied from the outside. In addition, the photocurrent generation semiconductor is made of a transparent material of which electric resistance varies according to the intensity of irradiated light.
Abstract translation: 目的：提供光触摸屏，通过作为激光指示器操作，有效地应用于现有的触摸屏技术。 构成：在基板上形成第一电极（110），在第一电极上形成光电流产生用半导体（120）。 在光电流产生半导体上形成第二电极（130）。 光电流产生半导体在从外部施加光点的区域中电连接第一和第二电极。 此外，光电流产生半导体由电阻根据照射光的强度而变化的透明材料制成。
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公开(公告)号：KR100996644B1
公开(公告)日：2010-11-25
申请号：KR1020080024208
申请日：2008-03-17
Applicant: 한국전자통신연구원
IPC: H01L29/786
Abstract: 본 발명은 ZnO TFT의 제조방법에 관한 것이다. 본 발명에 따른 ZnO TFT의 제조방법은 최적의 공정 조건하에서 아연 전구체와 산소 전구체를 이용하여 원자층 증착법을 통해 이상적인 조성의 ZnO 반도체막을 형성하는 단계를 포함하며, 또한 원자층 증착법을 이용하여 플라즈마 발생을 포함하는 공정을 사용하지 않는 공정으로 일차 절연막을 형성함에 따라 소자의 성능, 특히 이동도와 신뢰성을 개선시킬 수 있다.
산화아연, 원자층 증착법, 반도체막, 일차 절연막-
公开(公告)号：KR1020100073074A
公开(公告)日：2010-07-01
申请号：KR1020080131659
申请日：2008-12-22
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A transparent conductive film is provided to form a metal electrode of low resistance by forming a laminating structure of an oxide/meta/nitride. CONSTITUTION: A transparent conductive film includes a first transparent layer(120), a metal layer(130) and a second transparent layer(140). The first transparent layer is formed on a substrate(100). The metal layer is formed on the first transparent layer. The second transparent layer is formed on the metal layer. The first transparent layer is made of an oxide film. The first transparent layer has 1.9 or more refractive indexes. The second transparent layer is made of a nitride film or a sulfide film. A total thickness of the second transparent layer and the first transparent layer is 30nm to 70nm.
Abstract translation: 目的：通过形成氧化物/中间/氮化物的层压结构，提供透明导电膜以形成低电阻的金属电极。 构成：透明导电膜包括第一透明层（120），金属层（130）和第二透明层（140）。 第一透明层形成在基板（100）上。 金属层形成在第一透明层上。 第二透明层形成在金属层上。 第一透明层由氧化膜制成。 第一透明层的折射率为1.9以上。 第二透明层由氮化物膜或硫化物膜制成。 第二透明层和第一透明层的总厚度为30nm〜70nm。
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