公开(公告)号：JP2007150297A

公开(公告)日：2007-06-14

申请号：JP2006308493

申请日：2006-11-15

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MOEST BEARRACH ,  VAN DE STADT ARNOUT ,  VAN DER POEL CORNELIS ANDREAS

IPC: H01L21/027 ,  G01B11/00

CPC classification number: G03F9/7003 ,  G03F7/70633

Abstract: PROBLEM TO BE SOLVED: To provide an improved method for determining magnification of a projection system which is used with a projection lithography.
SOLUTION: The method measures magnification of the projection system of a lithography projection device comprising an image sensor capable of detecting a spatial image projected by the projection system. The method includes a step for projecting the image of one component in a two-component marker which is sensitive to overlay error between prints of two components, and a step for measuring a position of the component of two-component marker of the projected image using an image sensor.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于确定与投影光刻一起使用的投影系统的放大率的改进方法。 解决方案：该方法测量包括能够检测由投影系统投影的空间图像的图像传感器的光刻投影装置的投影系统的放大率。 该方法包括一个步骤，用于将一个分量的图像投影在对两个分量的打印之间的覆盖误差敏感的双分量标记中，以及用于测量投影图像的两分量标记的分量的位置的步骤，该步骤使用 图像传感器。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006245571A

公开(公告)日：2006-09-14

申请号：JP2006049444

申请日：2006-02-27

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： KOK HAICO VICTOR ,  VAN DE KERKHOF MARCUS A ,  KRUIZINGA BORGERT ,  SENGERS TIMOTHEUS F ,  MOEST BEARRACH ,  HAAST MARC ANTONIUS MARIA ,  WEISSBRODT PETER WERNER ,  SCHRENK MANFRED HELMUT GUSTAV ,  HARZENDORF TORSTEN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/7085

Abstract: PROBLEM TO BE SOLVED: To provide a sensor at a substrate level suitable for use in a system having high sensitivity and NA. SOLUTION: A sensor used at a substrate level in a lithography system having high NA has a transparent plate covering sensing elements, and arrangement for improving coupling between radiation and the sensing elements. The arrangement includes a Fresnel lens, a holographic optical element, a reverse Winston cone, a spherical lens, and surface roughening. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种适于在具有高灵敏度和NA的系统中使用的基板级的传感器。 解决方案：在具有高NA的光刻系统中在基底层处使用的传感器具有覆盖感测元件的透明板，以及用于改善辐射与感测元件之间的耦合的装置。 该装置包括菲涅尔透镜，全息光学元件，反向温斯顿锥体，球面透镜和表面粗糙化。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2006100076A3

公开(公告)日：2006-12-14

申请号：PCT/EP2006002677

申请日：2006-03-23

Applicant: ASML NETHERLANDS BV ,  BUURMAN ERIK PETRUS ,  CASTENMILLER THOMAS JOSEPHUS M ,  TEEUWSEN JOHANNES WILHELMUS MA ,  MOEST BEARRACH ,  HAAST MARC ANTONIUS MARIA

Inventor： BUURMAN ERIK PETRUS ,  CASTENMILLER THOMAS JOSEPHUS M ,  TEEUWSEN JOHANNES WILHELMUS MA ,  MOEST BEARRACH ,  HAAST MARC ANTONIUS MARIA

IPC: G03F7/20

CPC classification number: G03F7/70575 ,  G03F7/70641 ,  G03F9/7026

Abstract: A method and apparatus make use of data representing changes in wavelength of a radiation source to provide control of focal plane position or to provide correction of senso data. In the first aspect, the wavelength variation data is provided to control systems that control focus by moving apparatus components including, for example, the mask table (MT), the substrate table (WT) or optical elements of the projection optical system (PS). In the second aspect, variation data is used in correcting, e.g., focal plane position data measured by an inboard sensor, such as a transmitted image sensor. The two aspects may be combined in a single apparatus or may be used separately.

Abstract translation: 一种方法和装置利用表示辐射源的波长变化的数据来提供焦平面位置的控制或者提供感官数据的校正。 在第一方面中，波长变化数据被提供给通过移动包括例如掩模台（MT），衬底台（WT）或投影光学系统（PS）的光学元件的装置组件来控制焦点的控制系统， 。 在第二方面，变化数据用于校正例如由诸如传输图像传感器的内部传感器测量的焦平面位置数据。 这两个方面可以组合在单个装置中或者可以单独使用。

公开(公告)号：WO2008136666A3

公开(公告)日：2009-01-15

申请号：PCT/NL2008050264

申请日：2008-04-29

Applicant: ASML NETHERLANDS BV ,  STAALS FRANK ,  LOF JOERI ,  LOOPSTRA ERIK ROELOF ,  TEL WIM TJIBBO ,  MOEST BEARRACH

Inventor： STAALS FRANK ,  LOF JOERI ,  LOOPSTRA ERIK ROELOF ,  TEL WIM TJIBBO ,  MOEST BEARRACH

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/7085 ,  G03F7/70341 ,  G03F7/70483 ,  G03F9/7088

Abstract: The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor comprises a lens (5) arranged to form a detection image of the aerial pattern and an image detector (6) arranged to measure radiation intensities in- a plurality, of positions in the detection image.

Abstract translation: 本发明涉及一种用于检测天线图案的图像，其包括用于曝光基板的光刻设备中的辐射束的横截面中的辐射强度的空间差异。 图像传感器包括布置成形成天线图案的检测图像的透镜（5）和布置成测量检测图像中的多个位置中的辐射强度的图像检测器（6）。

公开(公告)号：SG148972A1

公开(公告)日：2009-01-29

申请号：SG2008048241

申请日：2008-06-25

Applicant: ASML NETHERLANDS BV

Inventor： NIHTIANOV STOYAN ,  VAN DER SIJS ARIE JOHAN ,  MOEST BEARRACH ,  KEMPER PETRUS WILHELMUS JOSEPHUS MARIA ,  HAAST MARC ANTONIUS MARIA ,  BAAS GERARDUS WILHELMUS PETRUS ,  NANVER LIS KAREN ,  SARUBBI FRANCESCO ,  SCHUWER ANTONIUS ANDREAS JOHANNES ,  GOMMEREN GREGORY MICHA ,  POT MARTIJN ,  SCHOLTES THOMAS LUDOVICUS MARIA

Abstract: RADIATION DETECTOR, METHOD OF MANUFACTURING A RADIATION DETECTOR AND LITHOGRAPHIC APPARATUS COMPRISING A RADIATION DETECTOR The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10 - 200 nm and/or for charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

公开(公告)号：NL1035629A1

公开(公告)日：2008-12-30

申请号：NL1035629

申请日：2008-06-25

Applicant: ASML NETHERLANDS BV

Inventor： MOEST BEARRACH

IPC: G03F9/02 ,  H01L21/02

公开(公告)号：SG125238A1

公开(公告)日：2006-09-29

申请号：SG200601220

申请日：2006-02-24

Applicant: ASML NETHERLANDS BV

Inventor： KOK HAICO VICTOR ,  KERKHOF VAN DE MARCUS ADRIANUS ,  KRUIZINGA BORGERT ,  SENGERS TIMOTHEUS FRANCISCUS ,  MOEST BEARRACH ,  HAAST MARC ANTONIUS MARIA ,  WEISSBRODT PETER WERNER ,  SCHRENK MANFRED HELMUT GUSTAV ,  HARZENDORF TORSTEN

Abstract: A sensor for use at substrate level in a high-NA lithographic apparatus has a transparent plate covering a sensing element and arrangements to improve coupling of radiation into the sensing element, including Fresnel lenses, holographic optical elements, inverted Winston Cones, spherical lenses and surface roughening.

公开(公告)号：NL2007367A

公开(公告)日：2012-05-02

申请号：NL2007367

申请日：2011-09-07

Applicant: ASML NETHERLANDS BV

Inventor： VOOGD ROBBERT JAN ,  KOK HAICO ,  MOEST BEARRACH ,  GILS PETER

IPC: G03F7/20

公开(公告)号：DE602006000357T2

公开(公告)日：2008-12-11

申请号：DE602006000357

申请日：2006-02-17

Applicant: ASML NETHERLANDS BV

Inventor： KOK HAICO VICTOR ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KRUIZINGA BORGERT ,  SENGERS TIMOTHEUS FRANCISCUS ,  MOEST BEARRACH ,  HAAST MARC ANTONIUS MARIA ,  WEISSBRODT PETER WERNER ,  SCHRENK MANFRED HELMUT GUSTAV WILHELM JOHANN ,  HARZENDORF TORSTEN

IPC: G03F7/20

Abstract: A sensor (30) for use at substrate level in a high-NA lithographic apparatus has a transparent plate (22) covering a sensing element (25) and arrangements to improve coupling of radiation into the sensing element, including Fresnel lenses (31), holographic optical elements, inverted Winston Cones, spherical lenses and surface roughening.

公开(公告)号：DE112019005052T5

公开(公告)日：2021-07-08

申请号：DE112019005052

申请日：2019-09-11

Applicant: ASML NETHERLANDS BV

Inventor： MOEST BEARRACH ,  MEIJERINK ROWIN ,  SCHENKELAARS THIJS ,  VAN DEN NIEUWELAAR NORBERTUS JOSEPHUS MARTINUS ,  VAN BOKHOVEN LAURENTIUS JOHANNES ADRIANUS

IPC: G03F1/62 ,  G03F7/20 ,  G03F9/00 ,  H01L21/31

Abstract: Ein Verfahren zum Vorhersagen einer Ablenkung eines Pellikels, die während der Bewegung des Pellikels in einer Lithografie-Vorrichtung auftreten wird, wobei das Verfahren das Empfangen von Parametern bezüglich der Eigenschaften des Pellikels und das Empfangen von Parametern bezüglich der erwarteten Bewegung des Pellikels beinhaltet. Die Parameter werden auf ein Modell angewendet, das die Ablenkung des Pellikels als Funktion dieser Parameter vorhersagt. Das Modell beinhaltet eine Vielzahl von Teilmodellen, die sich auf verschiedene Komponenten der Ablenkung des Pellikels beziehen. Eine Ausgabe des Modells kann verwendet werden, um einen lithografischen Fehler, der mit der vorhergesagten Ablenkung des Pellikels assoziiert ist, vorherzusagen und zu reduzieren.