中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.034 seconds)

    Lithographic apparatus
    11.
    发明专利
    Lithographic apparatus 有权
    LITHOGRAPHIC设备

    公开(公告)号：JP2010004040A

    公开(公告)日：2010-01-07

    申请号：JP2009140853

    申请日：2009-06-12

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VITALLY PROSYENTSOV ,  LALBAHADOERSING SANJAY ,  MUSA SAMI ,  LEE HYUN-WOO

    IPC: H01L21/027

    CPC classification number: G03B27/52 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/7085

    Abstract: PROBLEM TO BE SOLVED: To provide an improved lithographic apparatus in which at least one of the disadvantages in the conventional techniques has been removed or alleviated.
    SOLUTION: A substrate stage of an immersion-type lithographic apparatus configured to project a patterned radiation beam from a patterning device onto a substrate is provided to hold the substrate and comprises at least one sensor for sensing the patterned radiation beam. The sensor includes, at least a partially transmissive layer having a front surface facing the incoming radiation beam and a back surface opposite to the front surface, and the back surface is provided with at least one sensor mark to be exposed to the radiation beam passing through the transmissive layer.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种改进的光刻设备，其中传统技术中的至少一个缺点已被消除或减轻。 解决方案：设置浸没式光刻设备的衬底台，其被配置为将图案化的辐射束从图案形成装置投影到衬底上以保持衬底并且包括用于感测图案化的辐射束的至少一个传感器。 传感器包括至少一个具有面向入射辐射束的前表面和与前表面相对的后表面的部分透射层，并且背表面设置有至少一个传感器标记，以暴露于通过的辐射束 透射层。 版权所有（C）2010，JPO＆INPIT

    Sub-segmented alignment mark arrangement
    12.
    发明专利
    Sub-segmented alignment mark arrangement 有权
    分标签对齐标记安排

    公开(公告)号：JP2009302534A

    公开(公告)日：2009-12-24

    申请号：JP2009135670

    申请日：2009-06-05

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MUSA SAMI ,  FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAY

    IPC: H01L21/027

    CPC classification number: G03B27/54 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide an arrangement of an alignment mark that has improved compatibility with extreme dipolar illumination settings and also with less extreme settings to be used in the other patterning step during lithography processing.
    SOLUTION: An alignment mark on a substrate includes a periodic arrangement of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic arrangement is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-arrangement with a first sub-pitch and each second element has a second periodic sub-arrangement with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种对准标记的布置，其具有改进的与极性偶极照明设置的兼容性，并且还提供在光刻处理期间在另一图案化步骤中使用的较不极端的设置。 解决方案：衬底上的对准标记包括多个第一元件和多个第二元件的周期性布置。 元件沿第一方向以交替的重复序列排列。 周期性布置的整体间距等于第一元件的宽度和第一元件在第一方向上的宽度之和。 每个第一元件具有具有第一子间距的第一周期性子布置，并且每个第二元件具有带有第二子间距的第二周期性子布置。 用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。 总间距大于波长λ，第一和第二子间距都小于波长。 版权所有（C）2010，JPO＆INPIT

    System and method of determining critical dimension using alignment sensor of lithographic apparatus
    13.
    发明专利
    System and method of determining critical dimension using alignment sensor of lithographic apparatus 有权
    使用光刻设备的对准传感器确定关键尺寸的系统和方法

    公开(公告)号：JP2008124467A

    公开(公告)日：2008-05-29

    申请号：JP2007290272

    申请日：2007-11-08

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LEE HYUN-WOO ,  MUSA SAMI

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F9/7065 ,  G03F9/7076

    Abstract: PROBLEM TO BE SOLVED: To provide a system and method of determining parameters, such as a critical dimension of a patterned structure and a best focus state of a lithographic apparatus and the like, based on strength measurement of nonzero degree of diffracted light from an experimental structure.
    SOLUTION: An experimental structure includes a first line having a period longer than a wavelength of diffracted light, and an array of a partially filled space. The experimental structure also includes a second line including a partially filled space, and an array of the space.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种基于非零度的衍射光的强度测量来提供确定诸如图案化结构的临界尺寸和光刻设备的最佳聚焦状态等参数的系统和方法 从实验结构。 解决方案：实验结构包括具有比衍射光波长长的周期的第一行和部分填充空间的阵列。 实验结构还包括包括部分填充的空间的第二线和空间的阵列。 版权所有（C）2008，JPO＆INPIT

    Improved alignment method for lithography and its system
    14.
    发明专利
    Improved alignment method for lithography and its system 有权
    改进的对比方法及其系统

    公开(公告)号：JP2007273971A

    公开(公告)日：2007-10-18

    申请号：JP2007057070

    申请日：2007-03-07

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LALBAHADOERSING SANJAYSINGH ,  MUSA SAMI

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3105 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method for protecting and reproducing an alignment mark. SOLUTION: A part of a hard mask 414 located above a lower structure of an alignment mark 401 is selectively exposed with a predetermined exposure dose. The surface region 421 of hard mask coating on which this quantity of radiation has been irradiated rises above other regions on the surface of the hard mask. The elevated region 416 of the hard mask is formed in a corresponding location to the trench 406 of the lower layer alignment mark 401, and this elevated region 416 becomes a new alignment mark where the horizontal position of the lower layer alignment mark 401 is stored. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种保护和再现对准标记的方法。 解决方案：位于对准标记401的下部结构上方的硬掩模414的一部分以预定的曝光剂量选择性地曝光。 在其上照射有这种辐射量的硬掩模涂层的表面区域421在硬掩模的表面上方高于其它区域。 硬掩模的升高区域416形成在下层对准标记401的沟槽406的对应位置，并且该升高区域416变为存储下层对准标记401的水平位置的新的对准标记。 版权所有（C）2008，JPO＆INPIT

    PRODUCTION OF AN ALIGNMENT MARK.
    20.
    发明专利
    PRODUCTION OF AN ALIGNMENT MARK. 未知

    公开(公告)号：NL2006451A

    公开(公告)日：2011-11-08

    申请号：NL2006451

    申请日：2011-03-23

    Applicant: ASML NETHERLANDS BV

    Inventor： LI CHUNG-HSUN ,  HAREN RICHARD ,  MUSA SAMI ,  DECKERS DAVID ,  WU SHUN-DER

    IPC: G03F7/20 ,  H01L23/544

    Abstract: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.

Patent Agency Ranking