公开(公告)号：MY178806A

公开(公告)日：2020-10-20

申请号：MYPI2015002719

申请日：2014-05-05

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PROL? JULIAN

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

公开(公告)号：SG11201808692QA

公开(公告)日：2018-11-29

申请号：SG11201808692Q

申请日：2016-04-27

Applicant: BASF SE

Inventor： REICHARDT DR ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIN REZA ,  GUEVENC DR ,  PROELSS DR ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201600360YA

公开(公告)日：2016-02-26

申请号：SG11201600360Y

申请日：2014-07-08

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  LI YUZHUO ,  NOLLER BASTIAN MARTEN ,  LANGE ROLAND ,  REICHARDT ROBERT ,  LAN YONGQING ,  BOYKO VOLODYMYR ,  KRAUS ALEXANDER ,  SEYERL JOACHIM VON ,  USMAN IBRAHIM SHEIK ANSAR ,  SIEBERT MAX ,  HARTNAGEL KRISTINE ,  DENGLER JOACHIM ,  HILLESHEIM NINA SUSANNE

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

公开(公告)号：SG11201509227PA

公开(公告)日：2015-12-30

申请号：SG11201509227P

申请日：2014-05-06

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14

公开(公告)号：EP2997104A4

公开(公告)日：2017-01-25

申请号：EP14797473

申请日：2014-05-06

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了一种使用化学机械抛光用于抛光衬底或层包含一个或多个III-V族材料，worin的化学 - 机械抛光（CMP）组合物（CMP）组合物包含以下组分：（A）表面改性的二氧化硅 具有在pH为2至6（B）的范围为-15毫伏或低于负的Zeta电位的粒子的一种或多种组分选自（ⅰ）substituiertem和unsubstituiertem三唑不具有芳香环的选定退火以 三唑环，（II）苯并咪唑，（ⅲ）螯合剂选自具有两个或更多羧基基团，脂族羧酸，以及它们的respectivement盐的氨基酸由......组成，和（iv）的均聚物和丙烯酸的共聚物中选择剂， 和respectivement盐，（C）和水（D）任选的一种或多种成分另外，在worin组合物的pH在2至第六的范围

公开(公告)号：SG11201807364VA

公开(公告)日：2018-10-30

申请号：SG11201807364V

申请日：2017-03-13

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  GUEVENC HACI OSMAN ,  SIEBERT MAX ,  LAN YONGQING ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA M ,  WEI TE YU

IPC: C09G1/04

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201704496RA

公开(公告)日：2017-07-28

申请号：SG11201704496R

申请日：2015-12-22

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201704280QA

公开(公告)日：2017-07-28

申请号：SG11201704280Q

申请日：2015-12-16

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201700255UA

公开(公告)日：2017-02-27

申请号：SG11201700255U

申请日：2015-07-14

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  GUEVENC HACI OSMAN ,  PRÖLSS JULIAN ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：SG11201509209VA

公开(公告)日：2015-12-30

申请号：SG11201509209V

申请日：2014-05-05

Applicant: BASF SE

Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.