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    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL
    15.
    发明公开
    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL 审中-公开
    用于化学机械抛光（CMP）的组合物的使用用于抛光衬底或层与至少一个III-V族材料

    公开(公告)号：EP2997104A4

    公开(公告)日：2017-01-25

    申请号：EP14797473

    申请日：2014-05-06

    Applicant: BASF SE

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

    Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了一种使用化学机械抛光用于抛光衬底或层包含一个或多个III-V族材料，worin的化学 - 机械抛光（CMP）组合物（CMP）组合物包含以下组分：（A）表面改性的二氧化硅 具有在pH为2至6（B）的范围为-15毫伏或低于负的Zeta电位的粒子的一种或多种组分选自（ⅰ）substituiertem和unsubstituiertem三唑不具有芳香环的选定退火以 三唑环，（II）苯并咪唑，（ⅲ）螯合剂选自具有两个或更多羧基基团，脂族羧酸，以及它们的respectivement盐的氨基酸由......组成，和（iv）的均聚物和丙烯酸的共聚物中选择剂， 和respectivement盐，（C）和水（D）任选的一种或多种成分另外，在worin组合物的pH在2至第六的范围

    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION
    19.
    发明专利
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 未知

    公开(公告)号：SG11201700255UA

    公开(公告)日：2017-02-27

    申请号：SG11201700255U

    申请日：2015-07-14

    Applicant: BASF SE

    Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  GUEVENC HACI OSMAN ,  PRÖLSS JULIAN ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA

    IPC: C09G1/00

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

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