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公开(公告)号：US10361342B2
公开(公告)日：2019-07-23
申请号：US15633264
申请日：2017-06-26
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Wen-Hung Chuang , Tzu-Yao Tseng , Cheng-Lin Lu , Chi-Shiang Hsu , Tsung-Hsun Chiang , Bo-Jiun Hu
IPC: H01L33/62 , H01L33/38 , F21V29/77 , F21K9/232 , F21K9/237 , F21V3/02 , F21V5/04 , F21V23/06 , H01L33/40 , H01L33/44 , F21Y115/10 , H01L33/42 , H01L33/20
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.
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公开(公告)号：US10199544B2
公开(公告)日：2019-02-05
申请号：US15858534
申请日：2017-12-29
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US10153398B2
公开(公告)日：2018-12-11
申请号：US15800537
申请日：2017-11-01
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate.
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公开(公告)号：US09905733B2
公开(公告)日：2018-02-27
申请号：US15474476
申请日：2017-03-30
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che Chen , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Jia-Kuen Wang , Chih-Nan Lin
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
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公开(公告)号：US09893241B2
公开(公告)日：2018-02-13
申请号：US15350893
申请日：2016-11-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
CPC classification number: H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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Patent Agency Ranking
公开(公告)号：US09601655B2
公开(公告)日：2017-03-21
申请号：US14591772
申请日：2015-01-07
Applicant: EPISTAR CORPORATION
Inventor： Jia-Kuen Wang , Chao-Hsing Chen
CPC classification number: H01L33/382 , F21K9/232 , F21V23/06 , F21Y2115/10 , H01L25/0753 , H01L33/0062 , H01L33/007 , H01L33/0075 , H01L33/0083 , H01L33/0095 , H01L33/36 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic device comprises a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer; an electrode formed on the second semiconductor layer, wherein the first electrode further comprises a reflective layer; and an insulative layer formed on the second semiconductor layer, and a space formed between the first electrode and the insulative layer.
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公开(公告)号：US09530940B2
公开(公告)日：2016-12-27
申请号：US14589683
申请日：2015-01-05
Applicant: EPISTAR CORPORATION
Inventor： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
CPC classification number: H01L33/105 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。
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公开(公告)号：US09472725B2
公开(公告)日：2016-10-18
申请号：US14705453
申请日：2015-05-06
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
CPC classification number: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.
Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。
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公开(公告)号：US09466767B2
公开(公告)日：2016-10-11
申请号：US14537058
申请日：2014-11-10
Applicant: EPISTAR CORPORATION
Inventor： Jia-Kuen Wang , Chien-Fu Shen , Hung-Che Chen , Chao-Hsing Chen
CPC classification number: H01L33/38 , H01L33/0095 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.
Abstract translation: 光电子器件包括半导体叠层，形成在半导体叠层之上的第一金属层，其中第一金属层包括第一主平面和逐渐减小厚度的第一边界，以及形成在第一金属层之上的第二金属层， 其中所述第二金属层包括与所述第一主平面平行的第二主平面和具有逐渐减小的厚度的第二边界，并且所述第二金属层的第二边界超过所述第一金属层的第一边界。
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公开(公告)号：US09461209B2
公开(公告)日：2016-10-04
申请号：US14853511
申请日：2015-09-14
Applicant: Epistar Corporation
Inventor： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC classification number: H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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