公开(公告)号：US20170155015A1

公开(公告)日：2017-06-01

申请号：US15428395

申请日：2017-02-09

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Chiu-Lin YAO

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/30 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device.

公开(公告)号：US20240421249A1

公开(公告)日：2024-12-19

申请号：US18740925

申请日：2024-06-12

Applicant: EPISTAR CORPORATION

Inventor： Meng-Hsiang HONG ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Chen OU ,  Chien-Ya HUNG

IPC: H01L33/10 ,  H01L33/38 ,  H01L33/62

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first pitch.

公开(公告)号：US20240413268A1

公开(公告)日：2024-12-12

申请号：US18737448

申请日：2024-06-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Yang CHIU ,  Chun-Yu LIN ,  Chun Wei CHANG ,  Yi-Ming CHEN ,  Chen OU ,  Hung-Yu CHOU ,  Liang-Yi WU ,  Hsiao-Chi YANG

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.

公开(公告)号：US20210343913A1

公开(公告)日：2021-11-04

申请号：US17306141

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20210057603A1

公开(公告)日：2021-02-25

申请号：US17076511

申请日：2020-10-21

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HU ,  Wei-Chieh LIEN ,  Chen OU ,  Chia-Ming LIU ,  Tzu-Yi CHI

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01L33/02

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US20190237628A1

公开(公告)日：2019-08-01

申请号：US16380115

申请日：2019-04-10

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Liang-Sheng CHI ,  Chun-WEI CHANG ,  Chih-Wei WU

IPC: H01L33/42 ,  H01L33/14 ,  H01L33/08

CPC classification number: H01L33/42 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38

Abstract: A light-emitting device includes: a light-emitting stack formed on a first conductivity type contact layer and including an active layer and a second conductivity type semiconductor layer on the active layer; a first trench dividing the light-emitting stack into a first portion and a second portion, wherein the first trench includes a bottom exposing a top surface of the first conductivity type contact layer; a non-conductive material layer formed in the first trench and being a film conformal to a profile of the first trench; a connecting layer formed in the first trench and electrically connecting the first and the second portions of the light-emitting stack, wherein the connecting layer is a film conformal to a profile of the non-conductive material layer; and a first electrode formed on the first conductivity type contact layer and electrically connected to the first conductivity type semiconductor layer.

公开(公告)号：US20180158980A1

公开(公告)日：2018-06-07

申请号：US15872202

申请日：2018-01-16

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen TSAI ,  Chen OU ,  Chi Ling LEE ,  Chi Shiang HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/02 ,  H01L33/20 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US20170054056A1

公开(公告)日：2017-02-23

申请号：US15345185

申请日：2016-11-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Ching-San TAO ,  Chen OU ,  Min-Hsun HSIEH ,  Chao-Hsing CHEN

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/22

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电型半导体层的第一部分上的第一电介质层; 第一透明导电氧化物层，形成在第一介电层上和第二导电类型半导体层的第二部分上，第一透明导电氧化物层包括与第一电介质层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US20160133789A1

公开(公告)日：2016-05-12

申请号：US14997258

申请日：2016-01-15

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Chiu-Lin YAO

IPC: H01L33/20

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface; wherein one of the plurality of patterned units has a vertex, a first inclined surface, and a second inclined surface, and the first inclined surface and the second inclined surface commonly join at the vertex from a cross-sectional view of the light-emitting device.

Abstract translation: 发光装置包括具有顶表面和从顶表面突出的多个图案化单元的基板; 以及形成在所述基板上并具有基本上平行于所述顶表面的第一表面的有源层的发光堆叠; 其中所述多个图案化单元中的一个具有顶点，第一倾斜表面和第二倾斜表面，并且所述第一倾斜表面和所述第二倾斜表面从所述发光器件的横截面视图共同连接在所述顶点处 。

公开(公告)号：US20250143026A1

公开(公告)日：2025-05-01

申请号：US19009855

申请日：2025-01-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chao-Hsing CHEN ,  Chi-Ling LEE ,  Chen OU ,  Min-Hsun HSIEH

IPC: H10H20/831 ,  H01L25/13 ,  H10H20/833

Abstract: A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.