公开(公告)号：US20230395765A1

公开(公告)日：2023-12-07

申请号：US18230119

申请日：2023-08-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20210408338A1

公开(公告)日：2021-12-30

申请号：US17354922

申请日：2021-06-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Li-Yu SHEN ,  Chih-Hao CHEN ,  Keng-Lin CHUANG

IPC: H01L33/44 ,  H01L33/10

Abstract: A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.

公开(公告)号：US20210280745A1

公开(公告)日：2021-09-09

申请号：US17328732

申请日：2021-05-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Lun CHOU ,  Chih-Hao CHEN

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/36 ,  H01L33/24

Abstract: A method of manufacturing a light-emitting element includes: providing a substrate, wherein the substrate includes a top surface with a first area and a second area; introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer includes a first crystal quality and the second layer includes a second crystal quality, the first crystal quality is different from the second crystal quality; and dicing the substrate along the second area.

公开(公告)号：US20200044116A1

公开(公告)日：2020-02-06

申请号：US16529370

申请日：2019-08-01

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46 ,  H01L33/00

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20240339564A1

公开(公告)日：2024-10-10

申请号：US18625617

申请日：2024-04-03

Applicant: EPISTAR CORPORATION

Inventor： Wei-Che WU ,  Chih-Hao CHEN ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Yong-Yang CHEN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/60

Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

公开(公告)号：US20240274766A1

公开(公告)日：2024-08-15

申请号：US18641195

申请日：2024-04-19

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20230317898A1

公开(公告)日：2023-10-05

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US20230135799A1

公开(公告)日：2023-05-04

申请号：US18091035

申请日：2022-12-29

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/18

Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

公开(公告)号：US20210343906A1

公开(公告)日：2021-11-04

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/46 ,  H01L33/60 ,  H01L33/38

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20150228856A1

公开(公告)日：2015-08-13

申请号：US14690910

申请日：2015-04-20

Applicant: Epistar Corporation

Inventor： Liang-Sheng CHI ,  Pei-Chia CHEN ,  Chih-Hao CHEN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L27/153 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.

Abstract translation: 制造发光二极管的方法包括以下步骤：提供包括与上表面相对的上表面和底表面的基底; 在所述上表面上提供半导体堆叠层，其中所述半导体堆叠层包括具有第一表面的第一类型半导体层，用于发光的所述第一类型半导体层上的发光层和所述光上的第二类型半导体层 发光层 处理所述第一表面以形成第二表面，其中所述第二表面比所述第一表面平坦; 以及提供通过所述第二表面的激光束以切割所述基板。