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    LIGHT-EMITTING DEVICE
    11.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210222861A1

    公开(公告)日：2021-07-22

    申请号：US17153050

    申请日：2021-01-20

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Ying-Yang SU ,  Shih-An LIAO ,  Hsin-Mao LIU ,  Tzu-Hsiang WANG ,  Chi-Chih PU

    IPC: F21V23/00 ,  H01L25/075 ,  H01L25/16 ,  H01L33/62

    Abstract: A light-emitting device includes a first light-emitting module, a second light-emitting module, a conductive layer and an insulation layer. The first light-emitting module includes a first substrate having a first cavity, a first sidewall, and a light-emitting component disposed on the first substrate. The second module includes a second substrate having a second cavity corresponding to the first cavity and a second sidewall corresponding to the first sidewall. The conductive layer is directly connected to the first cavity and the second cavity and electrically connect the first light-emitting module and the second light-emitting module. The insulation layer is directly connected to the first sidewall and the second sidewall.

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF
    12.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20210151405A1

    公开(公告)日：2021-05-20

    申请号：US17163746

    申请日：2021-02-01

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

    IPC: H01L23/00 ,  H01L33/62

    Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    15.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权

    公开(公告)号：US20250081699A1

    公开(公告)日：2025-03-06

    申请号：US18817184

    申请日：2024-08-27

    Applicant: EPISTAR CORPORATION

    Inventor： Chang-Tai HSIAO ,  Shih-An LIAO

    IPC: H01L33/62 ,  H01L33/22 ,  H01L33/36

    Abstract: A semiconductor device comprises a first semiconductor stack comprising a first type semiconductor layer and a second type semiconductor layer; a protecting layer located on the semiconductor stack comprising n first openings and m second openings; a first electrode located on the n first openings, comprising a first outer surface and electrically connected to the first type semiconductor layer; a second electrode located on the m second openings, comprising a second outer surface and electrically connected to the second type semiconductor layer; a first conductive bump located on the first electrode and including a first convex top; a second conductive bump located on the second electrode and comprising a second convex top. The first top and the second top substantially have a same horizontal elevation.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20230119631A1

    公开(公告)日：2023-04-20

    申请号：US17962207

    申请日：2022-10-07

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Shih-An LIAO

    IPC: H01L33/62 ,  H01L25/075 ,  H01L33/38 ,  H01L33/00

    Abstract: A semiconductor device includes a semiconductor stack, a protective layer on the semiconductor stack, an electrode on the semiconductor stack and electrically connected to the semiconductor stack, and a conductive bump on the electrode. The thickness of the conductive bump is measured from the topmost point of the conductive bump to the uppermost surface of the protective layer. The ratio of the thickness of the conductive bump to the maximum width of the conductive bump is between 0.1 and 0.4.

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF
    19.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20230017939A1

    公开(公告)日：2023-01-19

    申请号：US17947536

    申请日：2022-09-19

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

    IPC: H01L23/00 ,  H01L33/62

    Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

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