公开(公告)号：US20180287031A1

公开(公告)日：2018-10-04

申请号：US16001676

申请日：2018-06-06

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L33/60 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L25/075 ,  H01L33/48 ,  H01L33/46 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/14 ,  H01L33/40 ,  H01L33/32

Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

公开(公告)号：US20160141459A1

公开(公告)日：2016-05-19

申请号：US15004450

申请日：2016-01-22

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Hung-Ta CHENG ,  Yao-Ru CHANG ,  Shih-I CHEN ,  Chia-Liang HSU

IPC: H01L33/46 ,  H01L33/06 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.

Abstract translation: 提供了一种发光装置。 发光装置包括：具有活性层的发光叠层; 在发光叠层上的电极结构，包括第一电极和延伸电极，该第一电极和延伸电极沿着第一延伸方向从所述第一电极朝向所述发光装置的边缘突出; 在所述发光层与所述电极结构之间的透明绝缘层，其中所述透明绝缘层包括第一部分和在所述第一部分朝向所述发光装置的边缘沿第二延伸方向突出的延伸部分; 其中，远离所述透明绝缘层的所述第一电极的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积，所述第一电极位于所述第一部分的正上方，并且 延伸电极的一部分在扩展部分的正上方。

公开(公告)号：US20150380604A1

公开(公告)日：2015-12-31

申请号：US14852212

申请日：2015-09-11

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Chien-Fu HUANG ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.

Abstract translation: 光电子器件包括用于在光电子系统上发射光和半导体层的光电子系统，其中半导体层包括Ag的金属元素，并且半导体层中的Ag的原子浓度大于1×1016cm-3。

公开(公告)号：US20150194586A1

公开(公告)日：2015-07-09

申请号：US14663544

申请日：2015-03-20

Applicant: Epistar Corporation

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L33/14 ,  H01L33/10 ,  H01L33/08 ,  H01L33/48 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.

Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。

公开(公告)号：US20150034996A1

公开(公告)日：2015-02-05

申请号：US13957425

申请日：2013-08-01

Applicant: Epistar Corporation

Inventor： Kuang-Ping CHAO ,  Wen-Luh LIAO ,  Shih-I CHEN ,  Chia-Liang HSU

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L33/38 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2924/3512

Abstract: A light-emitting device comprises a substrate; a first semiconductor stack formed on the substrate; a connecting part formed on the first semiconductor stack; and a plurality of droplets formed near the connecting part, wherein the plurality of droplets comprises a material same as that of the connecting part.

Abstract translation: 发光装置包括基板; 形成在所述基板上的第一半导体堆叠; 形成在所述第一半导体堆叠上的连接部件; 以及在所述连接部附近形成的多个液滴，其中所述多个液滴包括与所述连接部件相同的材料。

公开(公告)号：US20150014721A1

公开(公告)日：2015-01-15

申请号：US14302036

申请日：2014-06-11

Applicant: Epistar Corporation

Inventor： Wen-Luh LIAO ,  Chien-Chung HSU ,  Yao-Ru CHANG ,  Shih-I CHEN ,  Chia-Liang HSU

IPC: H01L33/46 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4.

Abstract translation: 发光元件包括具有有源层的发光叠层和发光叠层下面的非氧化物绝缘层，其中非氧化物绝缘层的折射率小于1.4。

公开(公告)号：US20130341667A1

公开(公告)日：2013-12-26

申请号：US14011502

申请日：2013-08-27

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Min-Hsun HSIEH ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Shih-I CHEN

IPC: H01L33/62

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。

公开(公告)号：US20130256731A1

公开(公告)日：2013-10-03

申请号：US13901191

申请日：2013-05-23

Applicant: EPISTAR CORPORATION

Inventor： Huang Chien FU ,  Shih-I CHEN ,  Yi Ming CHEN ,  Tzu Chieh HSU ,  Jhih-Sian WANG

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。 第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层 。 第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。

公开(公告)号：US20220123167A1

公开(公告)日：2022-04-21

申请号：US17646102

申请日：2021-12-27

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

IPC: H01L33/00 ,  H01L21/683

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

公开(公告)号：US20180374992A1

公开(公告)日：2018-12-27

申请号：US16043981

申请日：2018-07-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/24 ,  H01L33/10 ,  H01L33/02 ,  H01L33/30 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.