公开(公告)号：AU2002241147A1

公开(公告)日：2003-03-03

申请号：AU2002241147

申请日：2002-03-21

Applicant: IBM

Inventor： DEV PRAKASH ,  EDELSTEIN DANIEL CHARLES ,  SHAFER PADRAIC ,  SIMPSON ALEXANDER ,  LOW KIA-SENG ,  WRSCHKA PETER ,  CONTI RICHARD ,  DOBUZINSKY DAVID MARK ,  LEE GILL

IPC: H01L21/28 ,  H01L21/316 ,  H01L23/532 ,  H01L29/51

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

公开(公告)号：AU624467B2

公开(公告)日：1992-06-11

申请号：AU4778890

申请日：1990-01-08

Applicant: IBM

Inventor： DOBUZINSKY DAVID MARK ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312 ,  C01B33/04 ,  C23C16/24

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：DE69737469D1

公开(公告)日：2007-04-26

申请号：DE69737469

申请日：1997-04-24

Applicant: SIEMENS AG ,  IBM

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L21/3205 ,  H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8244

Abstract: According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.

公开(公告)号：DE69534699T2

公开(公告)日：2006-07-20

申请号：DE69534699

申请日：1995-09-22

Applicant: IBM

Inventor： DOBUZINSKY DAVID MARK ,  MATSUDA TETSUO ,  VAN NGUYEN SON ,  RYAN JAMES GARDNER

IPC: C23C16/30 ,  H01L21/316 ,  C23C16/40 ,  C23C16/505 ,  H01L21/31

Abstract: Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element. In particular, comparison between traces of undoped oxide and fluorosilicate glass clearly shows that the former has a greater SIOH concentration which is a manufacturing yield detractor.

公开(公告)号：DE69618548T2

公开(公告)日：2002-09-12

申请号：DE69618548

申请日：1996-10-24

Applicant: IBM

Inventor： ARMACOST MICHAEL DAVID ,  DOBUZINSKY DAVID MARK ,  GAMBINO JEFFERY PETER ,  JASO MARK ANTHONY

IPC: H01L21/768 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3105

Abstract: A method of forming interlevel studs in an insulating layer on a semiconductor wafer. First, a conformal BPSG layer is formed on a Front End of the Line (FEOL) semiconductor structure. Vias are opened through the BPSG layer to the FEOL structure. A layer of poly is formed (deposited) on the BPSG layer, filling the vias. The poly layer may be insitu doped poly or implanted after it is deposited. The wafer is annealed to diffuse dopant from the poly to form diffusions wherever the poly contacts the substrate. A non-selective slurry of colloidal silica and at least 1% ammonium hydroxide is used to chem-mech polish the poly from the BPSG layer and, simultaneously, planarize the BPSG layer.

公开(公告)号：BR9000665A

公开(公告)日：1991-01-15

申请号：BR9000665

申请日：1990-02-14

Applicant: IBM

Inventor： DOBUZINSKY DAVID MARK ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312 ,  B05D5/12 ,  C23C16/00 ,  G03C5/00

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：AU4778890A

公开(公告)日：1990-08-23

申请号：AU4778890

申请日：1990-01-08

Applicant: IBM

Inventor： DOBUZINSKY DAVID MARK ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312 ,  C01B33/04 ,  C23C16/24

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.