公开(公告)号：AU2003249353A1

公开(公告)日：2005-02-14

申请号：AU2003249353

申请日：2003-06-24

Applicant: IBM

Inventor： GAIDIS MICHAEL C

IPC: G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L29/82 ,  H01L29/00 ,  H01L43/00

公开(公告)号：CA2614373C

公开(公告)日：2014-05-27

申请号：CA2614373

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：DE102004030860B4

公开(公告)日：2007-05-31

申请号：DE102004030860

申请日：2004-06-25

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： BROWN STEPHEN L ,  COSTRINI GREG ,  GAIDIS MICHAEL C ,  FINDEIS FRANK ,  GLASHAUSER WALTER ,  NUETZEL JOACHIM ,  PARK CHANRO ,  O'SULLIVAN EUGENE

IPC: H01L21/768 ,  H01L21/4763 ,  H01L21/60 ,  H01L23/532 ,  H01L27/22

Abstract: Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be used. These aggresive processing steps offer the possibility of fabricating new device architectures. In addition, by encapsulating the areas of metallization, metal ion migration and electromigration can be prevented. Further, the encapsulated areas of metallization can serve as a self-aligning etch mask. Thus, vias etched between adjacent areas of metallization allow the area of the substrate allocated to the via to be significantly reduced without increasing the possibility of electrical shorts to the adjacent areas of metallization.

公开(公告)号：DE102004029355A1

公开(公告)日：2005-02-17

申请号：DE102004029355

申请日：2004-06-17

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： COSTRINI GREG ,  GAIDIS MICHAEL C ,  RATH DAVID L ,  GLASHAUSER WALTER

IPC: H01L21/60 ,  H01L21/283 ,  H01L21/311 ,  H01L21/3213

公开(公告)号：DE602007013472D1

公开(公告)日：2011-05-05

申请号：DE602007013472

申请日：2007-12-04

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  DEBROSSE JOHN K ,  HSU LOUIS L ,  RADENS CARL ,  WONG KEITH K ,  YANG CHIH-CHAO

IPC: G11C19/08 ,  G11B5/008

公开(公告)号：DE60323162D1

公开(公告)日：2008-10-02

申请号：DE60323162

申请日：2003-06-24

Applicant: IBM

Inventor： GAIDIS MICHAEL C

IPC: H01L29/82 ,  G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

公开(公告)号：DE102004029355B4

公开(公告)日：2008-05-15

申请号：DE102004029355

申请日：2004-06-17

Applicant: IBM ,  QIMONDA AG

Inventor： COSTRINI GREG ,  GAIDIS MICHAEL C ,  RATH DAVID L ,  GLASHAUSER WALTER

IPC: H01L21/283 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/60

公开(公告)号：DE102005036073A1

公开(公告)日：2006-03-23

申请号：DE102005036073

申请日：2005-08-01

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： GAIDIS MICHAEL C ,  LEUSCHNER RAINER ,  ROMANKIW LUBOMYR TARAS ,  RUBINO JUDY M

IPC: H01L27/22 ,  H01L21/768

Abstract: A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.

公开(公告)号：DE102005036073B4

公开(公告)日：2008-12-18

申请号：DE102005036073

申请日：2005-08-01

Applicant: IBM ,  QIMONDA AG

Inventor： GAIDIS MICHAEL C ,  LEUSCHNER RAINER ,  ROMANKIW LUBOMYR TARAS ,  RUBINO JUDY M

IPC: H01L27/22 ,  H01L21/768

Abstract: A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.

公开(公告)号：CA2614373A1

公开(公告)日：2007-01-18

申请号：CA2614373

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.