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公开(公告)号:DE69230684T2
公开(公告)日:2000-08-17
申请号:DE69230684
申请日:1992-10-23
Applicant: IBM
Inventor: CLECAK NICHOLAS JEFFRIES , WILLSON CARLTON GRANT , MCDONALD SCOTT ARTHUR , CONLEY WILLARD EARL , KWONG RANEE WAI-LING , SCHLOSSER HUBERT , LINEHAN LEO LAWRENCE , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/029 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/30
Abstract: Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of bing inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.
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公开(公告)号:DE69230684D1
公开(公告)日:2000-03-23
申请号:DE69230684
申请日:1992-10-23
Applicant: IBM
Inventor: CLECAK NICHOLAS JEFFRIES , WILLSON CARLTON GRANT , MCDONALD SCOTT ARTHUR , CONLEY WILLARD EARL , KWONG RANEE WAI-LING , SCHLOSSER HUBERT , LINEHAN LEO LAWRENCE , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/029 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/30
Abstract: Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of bing inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.
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公开(公告)号:DE69027799T2
公开(公告)日:1997-01-23
申请号:DE69027799
申请日:1990-02-02
Applicant: IBM
Inventor: BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.
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公开(公告)号:DE68926143D1
公开(公告)日:1996-05-09
申请号:DE68926143
申请日:1989-09-16
Applicant: IBM
Inventor: BRUCE JAMES ALLEN , KERBAUGH MICHAEL LYNN , KWONG RANEE WAI-LING , LEE TANYA NINA , LINDE HAROLD GEORGE , SACHDEV HARBANS SINGH , SACHDEV KRISHNA GANDHI
IPC: H01L21/302 , G03F7/09 , G03F7/40 , H01L21/027 , H01L21/3065
Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.
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