公开(公告)号：DE3572200D1

公开(公告)日：1989-09-14

申请号：DE3572200

申请日：1985-02-22

Applicant: IBM

Inventor： MEYERSON BERNARD STEELE ,  PLECENIK RICHARD MICHAEL ,  SCOTT BRUCE ALBERT

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14

Abstract: In a method of homogeneous chemical vapour deposition in which first (22) and second (20) gases are intermixed at a location (28) in the vicinity of a cool substrate (14) onto which a material is to be deposited, the first gas contains at least one constituent of the material to be deposited and is at a temperature less than its pyrolysis temperature and the second gas is heated (18) to a sufficiently high temperature that the intermixing of the gases causes the first gas to decompose.

公开(公告)号：DE69131520T2

公开(公告)日：2000-03-30

申请号：DE69131520

申请日：1991-12-11

Applicant: IBM

Inventor： CRABBE EMMANUEL ,  MEYERSON BERNARD STEELE ,  STORK JOHANNES MARIA CORNELIS ,  VERDONCKT-VANDEBROEK SOPHIE

IPC: H01L29/78 ,  H01L21/335 ,  H01L29/10 ,  H01L29/161 ,  H01L29/165 ,  H01L29/778

公开(公告)号：DE69118751D1

公开(公告)日：1996-05-23

申请号：DE69118751

申请日：1991-05-14

Applicant: IBM

Inventor： MEYERSON BERNARD STEELE

IPC: B01J3/03 ,  C23C16/44 ,  C23C16/54 ,  C30B25/14 ,  H01L21/205

Abstract: An ultra-high vacuum chemical vapor deposition reactor which utilizes only single large diameter, quartz to metal ultra-high vacuum seal or a water cooled "Viton" seal, which is present at a first end of the reactor tube. The other end of the reactor tube has a substantially reduced diameter, and an ultra-high vacuum seal of correspondingly reduced diameter is used at this end. The pumping apparatus and the load station are both located at the first end of the apparatus to provide a single-ended operation. This arrangement obviates problems encountered in the prior art which required the use of two ultra-high vacuum quartz to metal seals at respective ends of the reactor.

公开(公告)号：DE3770540D1

公开(公告)日：1991-07-11

申请号：DE3770540

申请日：1987-07-21

Applicant: IBM

Inventor： JASINSKI JOSEPH MARTIN ,  MEYERSON BERNARD STEELE ,  SCOTT BRUCE ALBERT

IPC: H01L21/285 ,  C23C16/32 ,  C23C16/42 ,  G01Q30/12 ,  G01Q30/16 ,  G01Q70/00 ,  H01L21/28 ,  H01L21/31

公开(公告)号：DE3469303D1

公开(公告)日：1988-03-17

申请号：DE3469303

申请日：1984-11-06

Applicant: IBM

Inventor： KUECH THOMAS FRANCIS ,  MEYERSON BERNARD STEELE

IPC: H01L21/205 ,  C30B25/02

Abstract: A gaseous hydride based silicon compound having a molecule containing at least two silicon atoms, such as Si2H6 to Si5H12, is used as a source of silicon in a metal organic chemical vapour deposition process for epitaxially depositing a silicon doped intermetallic semiconductor compound such as GaAs or GaA1As.

公开(公告)号：DE69214087T2

公开(公告)日：1997-04-03

申请号：DE69214087

申请日：1992-10-09

Applicant: IBM

Inventor： JASO MARK ANTHONY ,  JONES PAUL BRADLEY ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/311

公开(公告)号：DE69117916T2

公开(公告)日：1996-10-02

申请号：DE69117916

申请日：1991-12-09

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN ,  CHANG HENRY CHINLIN ,  CHEN MAO-MIN ,  SCHWENKER ROBERT OTTO

IPC: G11B5/31 ,  G11B5/60

公开(公告)号：DE69117916D1

公开(公告)日：1996-04-18

申请号：DE69117916

申请日：1991-12-09

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN ,  CHANG HENRY CHINLIN ,  CHEN MAO-MIN ,  SCHWENKER ROBERT OTTO

IPC: G11B5/31 ,  G11B5/60