公开(公告)号：JP2001217427A

公开(公告)日：2001-08-10

申请号：JP2000028357

申请日：2000-02-04

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIWA KOICHI

IPC: H01L29/786 ,  G02F1/136 ,  G02F1/1368

Abstract: PROBLEM TO BE SOLVED: To reduce the leak current in floating island parts formed in a thin film transistor and hold the required ON-current high for the TFT operation. SOLUTION: The transistor has a gate electrode 18 formed in a specified pattern above an insulation substrate, an amorphous Si film 16 formed corresponding to the patterning of the gate electrode 18, a source electrode 14 formed through this film 16, and a drain electrode 15 disposed with a specified space from the source electrode 14, the amorphous Si film 16 has a floating island part 22 not located above/below the gate electrode 18, and the source electrode 14 and the drain electrode 15 are constituted so that the channel length LOFF of the OFF-current in the floating island part 22 is longer than the channel length LON of the ON-current, formed by the source electrode 14 and the drain electrode 15 located above and below the gate electrode 18.

公开(公告)号：JPH11330472A

公开(公告)日：1999-11-30

申请号：JP12194398

申请日：1998-05-01

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a film transistor which prevents defects in which a leakage current arises between source and drain electrodes in off condition of a thin-film transistor(TFT), and its manufacture. SOLUTION: This is a reverse staggered type TFT and is provided with a thin (preferably 50 Å or under) silicon oxide film 90 between the amorphous silicon (a-Si) layer 40 of a back-channel region 100 between a source electrode and a drain electrode and a channel protective film 50 (silicon nitride film), and Si-O coupling is made to exist at the top interface of the a-Si layer. The Si-O coupling has the effect of suppressing the leakage current via the back channel region 100 in off condition of the TFT, by raising the state density of the back channel region 100 of the a-Si layer 40. Moreover, this thin silicon acid nitride film 90 includes sufficient Si-N couplings, so that the etching rate is lower than that of the silicon oxide film. Therefore, the etching control is simple, and it gives a reliable reverse staggered type TFT which is stable in voltage current property.

公开(公告)号：JPH0786230A

公开(公告)日：1995-03-31

申请号：JP19566393

申请日：1993-08-06

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  KITAHARA HIROAKI

IPC: H01L21/306 ,  C23F1/02 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/48 ,  H01L29/78 ,  H01L29/786 ,  H01L21/336 ,  H01L29/784

Abstract: PURPOSE: To provide a metal wiring film with improved yield by forming the sectional shape of the metal wiring film in a stable taper with improved controllability and at the same time preventing a worm-eaten defect generated on a wiring. CONSTITUTION: A first metal film 3 that should have a side wall whose sectional shape is in taper shape is formed on a substrate 1, a third metal film 7 with a small diffusion coefficient is formed for both metal films between the first metal film and a second metal film 4 that should be formed as its upper layer film, and further a second metal film 4 is formed as an upper-layer film on the third metal film 7. After that, a resist pattern 5 is formed on the second metal film 4, a first metal film 3 is etched with the patterns of the second metal film 4 and the third metal film 7 and the resist pattern as an etching mask, and the sectional shape of the first metal film 3 is formed in taper shape.

公开(公告)号：JP2003255856A

公开(公告)日：2003-09-10

申请号：JP2002050171

申请日：2002-02-26

Applicant: IBM

Inventor： KOBAYASHI YOSHINAO ,  TSUJIMURA TAKATOSHI ,  ONO SHINYA

IPC: H01L51/50 ,  G09F9/30 ,  G09G3/20 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3283 ,  G09G3/3291 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To appropriately obtain a threshold voltage (Vth) by an amorphous silicon TFT. SOLUTION: The driving circuit is provided with a self light emitting OLED 21, a driving transistor 22 which drives the OLED 21, a branching transistor 23 which is formed by making a portion of the electrodes of the transistor 22 independent and detects the threshold voltage (Vth) of the transistor 22, a compensation capacitor 28 into which the voltage (Vth) detected by the transistor 23 is written, a signal capacitor 27 into which signal voltages for the transistor 22 are written, a first transistor 24 which is located between a data line and the capacitor 27, a second transistor 25 which is located between the capacitors 27 and 28 and a third transistor 26 which is located between the gate electrode of the transistor 23 and other electrode. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002280391A

公开(公告)日：2002-09-27

申请号：JP2002008478

申请日：2002-01-17

Applicant: IBM

Inventor： PAUL S ANDREE ,  FRANK R RIBUSHU ,  TSUJIMURA TAKATOSHI

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device, a thin-film transistor(TFT) and TFT manufacturing method. SOLUTION: The semiconductor device includes a top-gate type thin-film transistor(TFT) which is formed on a substrate 1. The top-gate type TFT comprises an insulation layer 3 deposited on the substrate 1, a source and drain electrodes 4, 5 of a metal - dopant compound deposited on the insulation layer 3, a polycrystalline Si(poly-Si) layer 6 deposited on the upsides of the insulation layer 3, the source and drain electrodes 4, 5, an Ohmic contact layer 7, formed by migration of the dopant from the metal - dopant compound between the metal - dopant compound and the poly-Si layer 6, a gate insulation layer 9 deposited on the poly-Si layer 6 and a gate electrode 10 formed on the gate insulation layer 9. The poly-Si layer 6 is crystallized by lateral crystallization due to the metal induction.

公开(公告)号：JP2002237594A

公开(公告)日：2002-08-23

申请号：JP2001027029

申请日：2001-02-02

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  HASUMI TARO ,  TOKUHIRO OSAMU ,  MOROOKA MITSUO

IPC: G02F1/1368 ,  H01L21/28 ,  H01L21/306 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor using a interlayer polymer resin, in which the self-alignment of contact holes are improved and the number of manufacturing steps can be reduced, and to provide a method for manufacturing the same and a display device including the thin-film transistor. SOLUTION: The thin-film semiconductor device includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a channel protective film 24, a source and a drain electrodes 25 and 26 respectively, a passivation layer 27 on which a first opening is formed to form a contact hole 28, and a interlayer insulating film 31 which extends along the layer 27 and has a second opening formed thereon to form the contact hole 28. The first and second openings are self-aligned to each other over a substrate 20. Conductive layers 32 and 33 are deposited on the inner wall of the contact hole 28, and the inner wall is formed by a plurality of different etching processes.

公开(公告)号：JP2001201767A

公开(公告)日：2001-07-27

申请号：JP2000012118

申请日：2000-01-20

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  KAMIYA HIROYUKI

IPC: G09F9/30 ,  G02F1/1335 ,  G02F1/13357 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device capable of improving luminance independent of the numerical aperture. SOLUTION: By arranging a lower polarizing plate 14 between an array substrate 15 and a color filter substrate 13, a beam reflected on a metallic film formed on the array substrate 15 is returned directly to a light guide plate 17. Then, the re-use efficiency of the beam is improved, and the luminance as the liquid crystal display device 10 is enhanced.

公开(公告)号：JP2000330128A

公开(公告)日：2000-11-30

申请号：JP13389199

申请日：1999-05-14

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  HASUMI TARO

IPC: G02F1/136 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: PROBLEM TO BE SOLVED: To provide a method for the production of a color liquid crystal display device by which, while an ITO(indium tin oxide) electrode is formed by exposure through a back face using a negative resist, the overlap length of the ITO electrode and a data line can be made uniform without depending on the color of the color resist embedded in the pixel. SOLUTION: Color layers of a plurality of colors are formed on a transparent substrate where a thin film transistor structure, gate lines and data lines are formed, and a transparent conductive film is formed all over the transparent substrate where the aforementioned color layers are formed. Then a negative resist is applied all over the transparent conductive film and exposed to light which does not substantially include the wavelength band ?from 390 to 440 nm and coming from a light source disposed on the back of the transparent substrate by using the gate lines and data lines as a photomask. The negative resist exposed is developed, baked and removed, and the transparent electrode film where the negative resist is removed is removed by etching.

公开(公告)号：JPH08330272A

公开(公告)日：1996-12-13

申请号：JP1608496

申请日：1996-01-31

Applicant: TOSHIBA CORP ,  IBM

Inventor： NAKAYAMA NORIO ,  DOJIRO MASAYUKI ,  HIRAYAMA HIDEO ,  TSUJIMURA TAKATOSHI ,  MAKITA ATSUYA

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/306 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing thin-film transistors which ensure etching for a substance having a metallic film and an oxide film. SOLUTION: In an etching step of a second gate insulated film 4 and a first gate insulated film 3, a glass substrate 1 having a gate electrode 2 of Al, of which a surface is coated with a first insulation film 3 of Al2 O3 is placed in an etching solution containing a hydrofluoric acid together with a counter electrode, and Al of the gate electrode 2 is set in an inactive potential, so that a surface of Al of the gate electrode 2 is held in an unetching state. A potential of a surface of Al2 O3 of the first gate insulated film 3 on Al of the gate electrode 2 is determined according to a potential of a counter electrode as Al2 O3 is an insulation film of high resistance, and the potential of the counter electrode is set at a nobler potential than Al and in a region where Al is ionized, and the potential of the surface of Al2 O3 is also set at a potential that Al is active. Only Al2 O3 of the first gate insulation film 3 on Al of the gate electrode 2 is removed.

公开(公告)号：JP2003303969A

公开(公告)日：2003-10-24

申请号：JP2002098466

申请日：2002-04-01

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： TSUJIMURA TAKATOSHI ,  KOBAYASHI KAZUMASA ,  MOROOKA MITSUO ,  MIWA KOICHI

IPC: G02F1/1368 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a thin film transistor having a high mobility in which aging of the threshold value is improved, its fabricating method, and an active matrix display comprising the thin film transistor. SOLUTION: The thin film transistor comprises an insulating film 12 formed on a substrate 10, semiconductor layers 16a and 16b formed on an insulating film 14, a gate electrode 18, a source electrode 20 connected with the semiconductor layers, and a drain electrode 22 wherein the semiconductor layers 16a and 16b are formed such that electronic affinity decreases as they approach the insulating film 14 along the thickness direction thereof. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有提高阈值老化的高迁移率的薄膜晶体管，其制造方法和包括薄膜晶体管的有源矩阵显示器。 解决方案：薄膜晶体管包括形成在基板10上的绝缘膜12，形成在绝缘膜14上的半导体层16a和16b，栅电极18，与半导体层连接的源极20和漏极 电极22，其中半导体层16a和16b形成为使得当电子亲和力沿着其厚度方向接近绝缘膜14时，电子亲和力降低。 版权所有（C）2004，JPO