公开(公告)号：AU2020423563A1

公开(公告)日：2022-06-16

申请号：AU2020423563

申请日：2020-12-14

Applicant: IBM

Inventor： ADIGA VIVEKANANDA ,  YAN HONGWEN ,  PAPALIA JOHN ,  RATH DAVID ,  PATEL JYOTICA

IPC: H01L39/24 ,  G06N10/00 ,  H01L27/18 ,  H01L39/14

Abstract: A method for fabricating a bridge structure in a quantum mechanical device includes providing a substructure including a substrate having deposited thereon a layer of a first superconducting material divided into a first portion, a second portion and a third portion that are electrically insulated from each other; depositing a sacrificial layer on the substructure; electrically connecting the first portion and the second portion with a strip of a second superconducting material, the second superconducting material being different from the first superconducting material; and removing a portion of the sacrificial layer so as to form a bridge structure over the third portion between the first portion and the second portion, the bridge structure electrically connecting the first portion to the second portion while not electrically connecting the third portion to the first portion and not electrically connecting the third portion to the second portion.

公开(公告)号：DE102004004594A1

公开(公告)日：2004-09-09

申请号：DE102004004594

申请日：2004-01-29

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： MALIK RAJEEV ,  RAMACHANDRAN RAVIKUMAR ,  DIVAKARUNI RAMACHANDRA ,  GLUSCHENKOV OLEG ,  YAN HONGWEN ,  YANG HAINING

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/336

Abstract: A method of fabricating a semiconductor device having a gate stack structure that includes gate stack sidewall, the gate stack structure having one or more metal layers comprising a gate metalis provided. The gate metal is recessed away from the gate stack sidewall using a chemical etch. The gate metal of the gate stack structure is selectively oxidized to form a metal oxide that at least partly fills the recess.

公开(公告)号：DE10016938C2

公开(公告)日：2003-04-24

申请号：DE10016938

申请日：2000-04-05

Applicant: IBM

Inventor： BENNETT DELORES A ,  NORUM JAMES P ,  YAN HONGWEN

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/318 ,  C23F4/00

Abstract: Process for etching an oxide layer located on a nitride layer in the upper region of a substrate having a high etching selectivity for the oxide layer comprises preparing a plasma derived from a carbonaceous and fluorine-containing gas and a gas containing nitrogen, and etching the substrate in the plasma.

公开(公告)号：DE602005027195D1

公开(公告)日：2011-05-12

申请号：DE602005027195

申请日：2005-04-21

Applicant: IBM

Inventor： WISE RICHARD S ,  CHEN BOMY A ,  HAKEY MARK C ,  YAN HONGWEN

IPC: H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

公开(公告)号：AU2003285581A1

公开(公告)日：2004-06-30

申请号：AU2003285581

申请日：2003-12-02

Applicant: IBM

Inventor： WISE RICHARD ,  YAN HONGWEN ,  JI BRIAN ,  PANDA SIDDHARTHA ,  CHEN BOMY

IPC: H01J37/32

Abstract: A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.

公开(公告)号：DE10016938A1

公开(公告)日：2000-11-16

申请号：DE10016938

申请日：2000-04-05

Applicant: IBM

Inventor： BENNETT DELORES A ,  NORUM JAMES P ,  YAN HONGWEN

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/318 ,  C23F4/00

Abstract: Process for etching an oxide layer located on a nitride layer in the upper region of a substrate having a high etching selectivity for the oxide layer comprises preparing a plasma derived from a carbonaceous and fluorine-containing gas and a gas containing nitrogen, and etching the substrate in the plasma.