Abstract:
A polarized sample beam (12) of broadband radiation is focused onto the surface of a sample (3) and the radiation modified by the sample is collected by means of a mirror system (16) in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures (30) to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thickness and refractive indices of thin films.
Abstract:
Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.
Abstract:
Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.
Abstract:
An optical surface inspection system is designed to correct for misregistration errors. A reference vector of data samples is obtained by computing an average of adjacent data sample vectors. A comparison of the data samples in a current vector being processed to data samples that may be offset from such current vector along the direction of the current vector enables the detection and correction of misregistration errors. Alternatively, a target array of data samples is compared to a reference array of data samples collected from a different portion of the surface with various offsets for detection and correction of misregistration errors. The intensity of the reflection from the inspection beam may be monitored to vary the intensity of the inspection beam so as to reduce the dynamic range of background scattering.
Abstract:
Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe.
Abstract:
Two phase modulators or polarizing elements are employed to modulate the polarization of an interrogating radiation beam before and after the beam has been modified by a sample to be measured. Radiation so modulated and modified by the sample is detected and up to 25 harmonics may be derived from the detected signal. The up to 25 harmonics may be used to derive ellipsometric and system parameters, such as parameters related to the angles of fixed polarizing elements, circular deattenuation, depolarization of the polarizing elements and retardances of phase modulators. A portion of the radiation may be diverted for detecting sample tilt or a change in sample height. A cylindrical objective may be used for focusing the beam onto the sample to illuminate a circular spot on the sample. The above-described self-calibrating ellipsometer may be combined with another optical measurement instrument such as a polarimeter, a spectroreflectometer or another ellipsometer to improve the accuracy of measurement and/or to provide calibration standards for the optical measurement instrument. The self-calibrating ellipsometer as well as the combined system may be used for measuring sample characteristics such as film thickness and depolarization of radiation caused by the sample.
Abstract:
Two phase modulators or polarizing elements are employed to modulate the polarization of an interrogating radiation beam before and after the beam has been modified by a sample to be measured. The detected signal may be used to derive ellipsometric and system parameters, such as parameters related to the angle of fixed polarizing elements and retardances of phase modulators. A portion of the radiation may be diverted for detecting sample tilt or a change in sample height. A cylindrical objective may be used for focusing the beam onto the sample to illuminate a circular spot on the sample. The above-described self-calibrating ellipsometer may be combined with another optical measurement instrument such as a polarimeter, a spectroreflectometer or another ellipsometer to improve the accuracy of measurement and/or to provide calibration standards for the optical measurement instrument. The self-calibrating ellipsometer as well as the combined system may be used for measuring sample characteristics such as film thickness and depolarization of radiation caused by the sample.
Abstract:
A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
Abstract:
A periodic structure (32) is illuminated by polychromatic electromagnetic radiation (20). Radiation from the structure is collected and divided into two rays having different polarization states. The two rays (46, 48) are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam.
Abstract:
Disclosed is a self-clearing objective (100) for directing a beam towards a sample and clearing away debris from an optical viewing path adjacent to the sample. The self-clearing objective includes an optical element (106, 210, 310, 408, 510) and a substantially transparent fluid (104, 213, 326, 512) flowing between the optical element and the sample such that at least a portion adjacent to the sample is substantially cleared of debris. The optical element and the fluid cooperatively direct the beam towards the sample. This self-clearing objective may be coupled with various measurement devices to measure various characteristics of samples having debris that prevents clear optical measurements. Additionally, the measurement device may be integrated with or coupled to various sample processing systems so that the relevant process may be clearly monitored.