公开(公告)号：WO2008027214A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018250

申请日：2007-08-17

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

Inventor： BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

IPC: B05D5/12 ,  B05C13/02 ,  B05D3/00 ,  B29C71/04 ,  C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  H05K3/00

CPC classification number: H01L21/67196 ,  C23C14/22 ,  C23C16/06 ,  C23C16/44 ,  C23C16/45544 ,  C23C16/52 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/38 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/67161 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/6723 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76879

Abstract: The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.

Abstract translation: 实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。 阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。 或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。 一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层的示例性方法，以帮助在集成系统中在铜互连中沉积铜层，以便改善铜互连的电迁移性能 被提供。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将衬底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中的金属层上沉积功能化层。 该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

公开(公告)号：WO2007038030B1

公开(公告)日：2008-01-24

申请号：PCT/US2006036139

申请日：2006-09-15

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

IPC: H01J7/24 ,  H01L21/302

CPC classification number: H01L21/02087 ,  B08B7/0035

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract translation: 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：WO2005003864A3

公开(公告)日：2005-04-14

申请号：PCT/US2004020332

申请日：2004-06-23

Applicant: LAM RES CORP ,  HEMKER DAVID ,  REDEKER FRED C ,  BOYD JOHN ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

Inventor： HEMKER DAVID ,  REDEKER FRED C ,  BOYD JOHN ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

IPC: G03F7/20

CPC classification number: G03F7/70341 ,  Y10S134/902

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Abstract translation: 提供一种用于处理基板的方法，其包括在基板的表面上产生弯月面并且通过弯月面施加光刻光以使得能够对基板的表面进行光刻处理。

公开(公告)号：JP2006009154A

公开(公告)日：2006-01-12

申请号：JP2005186284

申请日：2005-06-27

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DORDI YEZDI ,  MARASCHIN BOB ,  BOYD JOHN ,  REDEKER FRED C

IPC: C25D7/12 ,  C25D5/04 ,  C25D17/00 ,  C25D17/12 ,  C25D17/14

CPC classification number: C25D5/026 ,  C25D5/02 ,  C25D5/06 ,  C25D17/14

Abstract: PROBLEM TO BE SOLVED: To provide an electroplating head giving a uniform current distribution to the whole of a wafer and giving a uniform plating thickness, and to provide a method for operating the same. SOLUTION: An electroplating head 100 is disposed in the upper part of a wafer 307. The head includes a main chamber 105, anode chambers 105A, 105B, anodes 115A, 115B arranged at the anode chambers, a fluid entrance 111, a fluid exit 112, and a porous resistive material 119 disposed at the fluid exit. The main chamber is separated from the anode chambers by membranes 109A, 109B penetrating anions. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种给整个晶片提供均匀电流分布并给出均匀电镀厚度的电镀头，并提供一种操作该电镀头的方法。 解决方案：电镀头100设置在晶片307的上部。头包括主室105，布置在阳极室的阳极室105A，105B，阳极115A，115B，流体入口111， 流体出口112和布置在流体出口处的多孔电阻材料119。 通过穿透阴离子的膜109A，109B将主室与阳极室分离。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2010216015A

公开(公告)日：2010-09-30

申请号：JP2010066565

申请日：2010-03-23

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： RAVKIN MIKE ,  BOYD JOHN ,  DORDI YEZDI N ,  REDEKER FRED C ,  DE LARIOS JOHN M

IPC: C25D7/12 ,  C25D5/02 ,  C25D5/04 ,  C25D5/22 ,  C25D17/12 ,  C25D21/00 ,  H01L21/00 ,  H01L21/288 ,  H01L21/3205

CPC classification number: C25D17/10 ,  C25D5/026 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method relating to deposition and planarization of a semiconductor wafer, more particularly, for more effectively depositing a thin film using a localized deposition and for enabling localized planarization. SOLUTION: A proximity head 102 that can be charged as an anode is placed in close proximity to the surface of a wafer 104. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. While the proximity head proceeds in a direction 120 across the wafer, a deposited layer 108 is formed over a seed layer 106. The deposited layer is formed by way of an electrochemical reaction facilitated by an electrolyte 110 contained in a meniscus 116 that is defined between the proximity head and the seed layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种与半导体晶片的沉积和平坦化相关的装置和方法，更具体地说，是为了更有效地使用局部沉积沉积薄膜并实现局部平坦化。 解决方案：可以作为阳极充电的接近头部102被放置在紧邻晶片104的表面。电镀液体设置在晶片和邻近头部之间以产生局部金属电镀。 当接近头沿晶片方向120进行时，沉积层108形成在晶种层106上方。沉积层通过包含在弯液面116中的电解质110促进的电化学反应形成，该电解质110定义在 邻近头和种子层。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006009153A

公开(公告)日：2006-01-12

申请号：JP2005186277

申请日：2005-06-27

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DORDI YEZDI ,  MARASCHIN BOB ,  BOYD JOHN ,  REDEKER FRED C ,  WOODS CARL

IPC: C25D17/00 ,  C25D5/04 ,  C25D7/12 ,  C25D17/06 ,  C25D17/10 ,  C25D21/00 ,  H01L21/288

CPC classification number: C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method for plating the whole of a semiconductor wafer having many electrodes at a uniform current distribution. SOLUTION: First and second electrodes 107A, 107B are disposed at locations, respectively, proximate to a periphery of a wafer support 103, wherein the locations are substantially opposed to each other relative to the wafer support 103. Each of the electrodes can be moved to electrically connect with and disconnect from a wafer 101 held by the wafer support 103. An anode 109 is disposed over and proximate to the wafer 101 such that a meniscus 111 of electroplating solution is maintained between the anode 109 and the wafer 101. As the anode 109 moves over the wafer 101 from the first location to the second location, an electric current is applied through the meniscus 111 between the anode 109 and the wafer 101. Also, as the anode 109 is moved over the wafer 101, the first and second electrodes 107A, 107B are controlled to connect with the wafer 101 while ensuring that the anode 109 does not pass over an electrode that is connected. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种以均匀电流分布电镀具有许多电极的整个半导体晶片的装置和方法。 解决方案：第一和第二电极107A，107B分别设置在靠近晶片支撑件103的周边的位置处，其中，这些位置相对于晶片支撑件103基本上彼此相对。每个电极可以 被移动以与由晶片支撑件103保持的晶片101电连接和断开。阳极109设置在晶片101上方并且靠近晶片101，使得电镀溶液的弯月面111保持在阳极109和晶片101之间。 当阳极109从晶片101从第一位置移动到第二位置时，通过阳极109和晶片101之间的弯液面111施加电流。而且，当阳极109移动到晶片101上时， 第一和第二电极107A，107B被控制以与晶片101连接，同时确保阳极109不通过连接的电极。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：DE602004026725D1

公开(公告)日：2010-06-02

申请号：DE602004026725

申请日：2004-06-23

Applicant: LAM RES CORP

Inventor： HEMKER DAVID ,  REDEKER FRED C ,  BOYD JOHN ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

IPC: G03F7/20

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

公开(公告)号：AT465435T

公开(公告)日：2010-05-15

申请号：AT04756062

申请日：2004-06-23

Applicant: LAM RES CORP

Inventor： HEMKER DAVID ,  REDEKER FRED ,  BOYD JOHN ,  DE LARIOS JOHN ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

IPC: G03F7/20

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

公开(公告)号：SG153857A1

公开(公告)日：2009-07-29

申请号：SG2009043290

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  MARASCHIN BOB ,  BOYD JOHN ,  REDEKER FRED C

IPC: C25D17/00 ,  C25D17/14

Abstract: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material,

公开(公告)号：DE60314508T2

公开(公告)日：2008-02-21

申请号：DE60314508

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/00

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.