公开(公告)号：AU2003293396A1

公开(公告)日：2004-07-09

申请号：AU2003293396

申请日：2003-12-04

Applicant: LAM RES CORP

Inventor： LARSON DEAN J ,  KADKHODAYAN BABAK ,  WU DI ,  TAKESHITA KENJI ,  YEN BI-MING ,  SU XINGCAI ,  DENTY WILLIAM M JR ,  LOEWENHARDT PETER

IPC: C23F1/00 ,  G05D7/06 ,  H01J37/00 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

公开(公告)号：DE60036107D1

公开(公告)日：2007-10-04

申请号：DE60036107

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：SG177584A1

公开(公告)日：2012-02-28

申请号：SG2012001616

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

公开(公告)号：SG157420A1

公开(公告)日：2009-12-29

申请号：SG2009078577

申请日：2005-08-12

Applicant: LAM RES CORP

Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

Abstract: A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.

公开(公告)号：AT371261T

公开(公告)日：2007-09-15

申请号：AT00948512

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：SG10201404264RA

公开(公告)日：2014-10-30

申请号：SG10201404264R

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

公开(公告)号：DE60036107T2

公开(公告)日：2008-05-21

申请号：DE60036107

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：AU2003293396A8

公开(公告)日：2004-07-09

申请号：AU2003293396

申请日：2003-12-04

Applicant: LAM RES CORP

Inventor： LARSON DEAN J ,  DENTY WILLIAM M JR ,  TAKESHITA KENJI ,  SU XINGCAI ,  YEN BI-MING ,  KADKHODAYAN BABAK ,  WU DI ,  LOEWENHARDT PETER

IPC: C23F1/00 ,  G05D7/06 ,  H01J37/00 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

公开(公告)号：AU6199200A

公开(公告)日：2001-01-31

申请号：AU6199200

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.