公开(公告)号：SG10201501328WA

公开(公告)日：2015-04-29

申请号：SG10201501328W

申请日：2007-08-28

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID ,  CARL WOODS ,  HYUNGSUK ALEXANDER YOON ,  ALEKSANDER OWCZARZ

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

公开(公告)号：AT412250T

公开(公告)日：2008-11-15

申请号：AT00980409

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  HEMKER DAVID ,  WILCOXSON MARK

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：DE60034862D1

公开(公告)日：2007-06-28

申请号：DE60034862

申请日：2000-12-20

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  KENNARD MARK ALLEN ,  SCHOEPP ALAN

IPC: C23C14/50 ,  H01L21/00 ,  C23C16/458 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

公开(公告)号：DE60218669D1

公开(公告)日：2007-04-19

申请号：DE60218669

申请日：2002-06-05

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  SCHOEPP ALAN ,  KENNARD MARK ALLEN

IPC: H01L21/3065 ,  H01L21/68 ,  H01L21/00 ,  H01L21/205 ,  H01L21/683 ,  H01L25/00 ,  H02N13/00

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

公开(公告)号：SG174750A1

公开(公告)日：2011-10-28

申请号：SG2011062171

申请日：2007-08-28

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Abstract: OF THE DISCLOSUREA cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions. The embodiments also provide for efficient methods for filling a trench of a substrate.Figure 1

公开(公告)号：MY140134A

公开(公告)日：2009-11-30

申请号：MYPI20055847

申请日：2005-12-13

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEKSANDER ,  WINNICZEK JAROSLAW W ,  NASSER LUAI ,  SCHOEPP ALAN ,  REDEKER FRED C ,  EDELBERG ERIK

IPC: G01N21/00

Abstract: 2 1 SVSTEM, METHOD AND APPARATUS FOR IN-SITU SUBSTRATE INSPECTION ABSTRACT OF THE DISCLOSURE A SYSTERN FOR INSPECTINGA SUBSTRATE INCLUDES A CAMERA AND A LIGHT SOURCE. THE CAMERA 5 IS ORIENTED TOWARD A FIELD OF IEV. THE FIELD OF VIEW ENCOMPASSES AT LEAST A FIRST PORTION OF A FIRST SURFACE OF THE SUBSTRATE. THE TIGHT SOURCE IS ORIENTED TOWARD THE FIELD OF VIEW AT A FIRST ANGLE P RELATIVE TO THE FIRST SURFACE OF THE SUBSTRATE. A METHOD FOR INSPECTING A SUBSTRATE IS ALSO INCLUDED. H (/0 -@

公开(公告)号：AT394789T

公开(公告)日：2008-05-15

申请号：AT00978613

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  HEMKER DAVID ,  WILCOXSON MARK

IPC: C23C16/507 ,  H01J37/32 ,  B05D7/24 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：AT356431T

公开(公告)日：2007-03-15

申请号：AT02732033

申请日：2002-06-05

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  SCHOEPP ALAN ,  KENNARD MARK ALLEN

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/205 ,  H01L21/683 ,  H01L25/00 ,  H02N13/00 ,  H01L21/68

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.