公开(公告)号：WO0203763A3

公开(公告)日：2002-12-27

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 在相同或几何形状相同的真空等离子体处理室中处理200mm和300mm晶片。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过经由腔室顶部的电介质窗口向等离子体供应电磁场而将腔室中的可电离气体激发成等离子体。 两个线圈都包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈都包括四匝，r.f. 励磁被施加到最靠近线圈中心点的转弯处。 离中心点第三远的转弯在用于200毫米晶圆的线圈中是不对称的。 最接近线圈中心点的两匝在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO2010117964A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030008

申请日：2010-04-05

Applicant: LAM RES CORP ,  JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

IPC: H01L21/3065 ,  H05H1/34

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract translation: 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。

公开(公告)号：WO2007100528A3

公开(公告)日：2008-10-23

申请号：PCT/US2007004224

申请日：2007-02-16

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

Abstract: Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

Abstract translation: 概括地说，本发明通过提供改进的室清洁机构来满足这些需要。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

公开(公告)号：WO2005060548A3

公开(公告)日：2006-02-23

申请号：PCT/US2004040267

申请日：2004-12-01

Applicant: LAM RES CORP ,  ANNAPRAGADA RAO ,  TAKESHITA KENJI

Inventor： ANNAPRAGADA RAO ,  TAKESHITA KENJI

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/76831 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

Abstract translation: 提供了在多孔低K电介质层中形成特征的方法。 将多孔低K电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在多孔低K电介质层上。 将特征蚀刻到多孔低K电介质层中。 在蚀刻特征之后，在特征上沉积保护层。 剥离图案化的光致抗蚀剂掩模，从而去除保护层的一部分，其中由保护层形成的保护壁保留在特征中。

公开(公告)号：WO2004055855A3

公开(公告)日：2005-01-06

申请号：PCT/US0338617

申请日：2003-12-04

Applicant: LAM RES CORP ,  LARSON DEAN J ,  KADKHODAYAN BABAK ,  WU DI ,  TAKESHITA KENJI ,  YEN BI-MING ,  SU XINGCAI ,  DENTY WILLIAM M JR ,  LOEWENHARDT PETER

Inventor： LARSON DEAN J ,  KADKHODAYAN BABAK ,  WU DI ,  TAKESHITA KENJI ,  YEN BI-MING ,  SU XINGCAI ,  DENTY WILLIAM M JR ,  LOEWENHARDT PETER

IPC: C23F1/00 ,  G05D7/06 ,  H01J37/00 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

CPC classification number: G05D7/0664 ,  H01J37/3244 ,  H01L21/31116

Abstract: An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).

Abstract translation: 用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应源（1880） 与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应的蚀刻气体流分解成多个腿部（1812,1814,1833,1834）和调节气体系统（1860-1862） ，1865-1868）与所述多个腿部（1812,1814）中的至少一个腿流体连接。

公开(公告)号：WO0175958A3

公开(公告)日：2002-01-03

申请号：PCT/US0108618

申请日：2001-03-16

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01J37/32642 ,  H01L21/32137

Abstract: An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine- containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

Abstract translation: 一种用于在用含氟气体清洁和/或等离子体蚀刻室的调节之后以最小等离子体蚀刻速率变化连续处理一系列半导体衬底的装置和方法。 该方法包括以下步骤：（a）将半导体衬底放置在等离子体蚀刻室中的衬底支撑件上，（b）在室中保持真空，（c）通过向腔室中提供蚀刻气体来蚀刻衬底的暴露表面 并激励蚀刻气体以在腔室中形成等离子体，（d）从腔室中移除基底; 并且（e）通过重复步骤（ad）连续地蚀刻腔室中的附加衬底，蚀刻步骤通过使围绕衬底的碳化硅边缘环上的H和Br的复合速率以足以抵消速率 其中Br在基底上被消耗。 该方法可以使用纯HBr或HBr与其他气体的组合进行。

公开(公告)号：DE60128229T2

公开(公告)日：2007-08-30

申请号：DE60128229

申请日：2001-06-26

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/00 ,  H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

公开(公告)号：AU4753701A

公开(公告)日：2001-10-15

申请号：AU4753701

申请日：2001-03-16

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32

Abstract: An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

公开(公告)号：AU2003293396A8

公开(公告)日：2004-07-09

申请号：AU2003293396

申请日：2003-12-04

Applicant: LAM RES CORP

Inventor： LARSON DEAN J ,  DENTY WILLIAM M JR ,  TAKESHITA KENJI ,  SU XINGCAI ,  YEN BI-MING ,  KADKHODAYAN BABAK ,  WU DI ,  LOEWENHARDT PETER

IPC: C23F1/00 ,  G05D7/06 ,  H01J37/00 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

公开(公告)号：SG10201405522RA

公开(公告)日：2014-10-30

申请号：SG10201405522R

申请日：2007-02-16

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Abstract: Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.