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公开(公告)号：DE50306984D1
公开(公告)日：2007-05-16
申请号：DE50306984
申请日：2003-11-06
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： EBERHARD FRANZ , HERRMANN GERHARD , MARIC JOSIP , SCHWIND MICHAEL , BEHRINGER MARTIN , BEHRES ALEXANDER
Abstract: A laser diode component comprising a laser diode bar on which a specific operating voltage is impressed during operation and with which a bridging element is connected in parallel, which bridging element is in a current-blocking state when the specific operating voltage is impressed on the associated laser diode bar and which bridging element changes over to a current-conducting state as soon as the voltage drop across the laser diode bar exceeds the operating voltage by a predefined voltage value. A circuit arrangement comprising a plurality of such laser diode components which are connected in series is furthermore specified.
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公开(公告)号：DE102005004478A1
公开(公告)日：2006-04-06
申请号：DE102005004478
申请日：2005-01-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： KUEHNELT MICHAEL , BEHRINGER MARTIN , STEEGMUELLER ULRICH , SCHWARZ THOMAS
Abstract: The device has a trapezoidal semiconductor laser (1) with a reinforcing area (2) whose width increases in a main radiation direction (3) of the laser. The laser is arranged next to a periodically polarized non-linear optical unit (4) for frequency conversion of the radiation emitted by the laser. The laser is designed as a semiconductor laser bars with parallel emission zones that are placed at a distance from each other. An independent claim is also included for an application of a semiconductor laser device for a printing machine, an exposure system, a copier, a scanner, a projector or an indicator device.
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公开(公告)号：DE10203392A1
公开(公告)日：2003-08-07
申请号：DE10203392
申请日：2002-01-29
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BEHRINGER MARTIN
Abstract: A compactly constructed configuration for coupling radiation into an optical fiber in a highly effective manner has a semiconductor laser with a radiation exit window, and an optical fiber having a radiation entry end. The radiation exit window of the semiconductor laser faces the radiation entry end of the optical fiber. A resonator is provided and has an end mirror and an output mirror, between which the semiconductor laser is disposed. The output mirror of the resonator is formed by the optical fiber. An optical device is disposed between the semiconductor laser and the optical fiber and serves for imaging only the fundamental mode of the radiation of the semiconductor laser onto the radiation entry end of the optical fiber.
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公开(公告)号：DE10139090A1
公开(公告)日：2003-03-06
申请号：DE10139090
申请日：2001-08-09
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BEHRINGER MARTIN , LUFT JOHANN , EBERHARD FRANZ
IPC: H01S5/40 , H01S5/026 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/323 , H01S5/343 , H01S5/0625 , H01S5/42
Abstract: The invention relates to a laser arrangement with two opposite semi-conductor lasers (1) of which a respective base mode is represented in the active zone of the opposite semi-conductor laser (1). Both of the semi-conductor laser elements (1) form together a common resonator. A free radiation area (15) between the two laser elements (1) does not comprise a lateral wave duct. The laser arrangement comprises an outgoing laser beam with reduced divergence.
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公开(公告)号：DE10061701A1
公开(公告)日：2002-06-27
申请号：DE10061701
申请日：2000-12-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ACKLIN BRUNO , BEHRINGER MARTIN , LUFT JOHANN , SPAETH WERNER , HEERLEIN JOERG , SPIKA ZELJKO , SCHLERETH KARL-HEINZ , KORTE LUTZ , HANKE CHRISTIAN , EBELING KARL
Abstract: The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).
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Patent Agency Ranking
公开(公告)号：DE102005004478B4
公开(公告)日：2009-03-19
申请号：DE102005004478
申请日：2005-01-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： KUEHNELT MICHAEL , BEHRINGER MARTIN , STEEGMUELLER ULRICH , SCHWARZ THOMAS
Abstract: The device has a trapezoidal semiconductor laser (1) with a reinforcing area (2) whose width increases in a main radiation direction (3) of the laser. The laser is arranged next to a periodically polarized non-linear optical unit (4) for frequency conversion of the radiation emitted by the laser. The laser is designed as a semiconductor laser bars with parallel emission zones that are placed at a distance from each other. An independent claim is also included for an application of a semiconductor laser device for a printing machine, an exposure system, a copier, a scanner, a projector or an indicator device.
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公开(公告)号：DE102004057998A1
公开(公告)日：2006-06-01
申请号：DE102004057998
申请日：2004-11-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STEEGMUELLER ULRICH , BEHRINGER MARTIN
Abstract: Laser pumping equipment incorporates at least one pumping energy source and transmitter of pumping energy into laser medium. Transmitter is so set-up that pumped medium contains preset energy distribution. Preferably, transmitter is so designed that mean energy, pumped into laser medium, has distribution with central, relative minimum. Typically, pumping profile with continuous, or discrete energy distribution and minimum in centre, is attained by transmitter. Laser medium may be semiconductor, or element from group of solid and gaseous laser medium. Independent claims are included for method of laser pumping.
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公开(公告)号：DE50011296D1
公开(公告)日：2006-02-16
申请号：DE50011296
申请日：2000-11-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： LUFT JOHANN , ACKLIN BRUNO , HEERLEIN JOERG , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO , HANKE CHRISTIAN , KORTE LUTZ , EBELING KARL , BEHRINGER MARTIN
IPC: H01S5/40 , H01L25/075 , H01L33/48 , H01S5/022
Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
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公开(公告)号：AT306133T
公开(公告)日：2005-10-15
申请号：AT00987065
申请日：2000-11-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： LUFT JOHANN , ACKLIN BRUNO , HEERLEIN JOERG , SCHLERETH KARL-HEINZ , SPAETH WERNER , SPIKA ZELJKO , HANKE CHRISTIAN , KORTE LUTZ , EBELING KARL , BEHRINGER MARTIN
IPC: H01S5/40 , H01L25/075 , H01L33/48 , H01S5/022
Abstract: The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
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公开(公告)号：DE102018119634A1
公开(公告)日：2020-02-13
申请号：DE102018119634
申请日：2018-08-13
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BEHRINGER MARTIN , BEHRES ALEXANDER , HIRAI ASAKO
IPC: H01L21/20 , H01L21/302
Abstract: Ein Verfahren zur Herstellung eines Halbleiterbauelements umfasst das Ausbilden (S100) einer ersten Halbleiterschicht über einem Wachstumssubstrat und das Aufbringen (S105) eines Modifikationssubstrats über der ersten Halbleiterschicht, wobei ein Material des Modifikationssubstrats einen thermischen Ausdehnungskoeffizienten hat, welcher von dem der Halbleiterschicht verschieden ist. Das Verfahren umfasst weiterhin das Entfernen (S107) des Wachstumssubstrats, wodurch ein erster Schichtstapel erhalten wird, und das Aufheizen (S120) des ersten Schichtstapels auf eine Wachstumstemperatur.
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