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公开(公告)号：DE102008039360A1
公开(公告)日：2010-02-25
申请号：DE102008039360
申请日：2008-08-22
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： GROLIER VINCENT , PLOESL ANDREAS
IPC: H01L31/0232 , H01L31/0224 , H01L33/00 , H01S5/02 , H05B33/22
Abstract: An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas.
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公开(公告)号：DE102008038852A1
公开(公告)日：2009-12-17
申请号：DE102008038852
申请日：2008-08-13
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： PLOESL ANDREAS
Abstract: The method involves applying a metallic layer on one of main sides of a layer sequence (10), that is epitaxially developed in a developing substrate (14) e.g. sapphire wafer, where the main side is turned away from a main light radiation direction. A substrate carrier is provided with another main side, which exhibits another metallic layer, where the latter main side faces the main light radiation direction. The metallic layers are joined with each other so that an extensive covalent or metallic bond is formed between the two metallic layers, and the developing substrate is removed. An independent claim is also included for an optoelectronic component comprising an epitaxial developed layer sequence.
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公开(公告)号：DE102007019776A1
公开(公告)日：2008-10-30
申请号：DE102007019776
申请日：2007-04-26
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ILLEK STEFAN , PLOESL ANDREAS , HEINDL ALEXANDER , RODE PATRICK , EISSLER DIETER
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公开(公告)号：DE102004036962A1
公开(公告)日：2006-03-23
申请号：DE102004036962
申请日：2004-07-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： KAISER STEPHAN , HAERLE VOLKER , HAHN BERTHOLD , PLOESL ANDREAS
Abstract: A production process for a thin-film semiconductor chip comprises forming an emitting active layer sequence (2) on a growth substrate followed by a reflective electrically conductive contact layer (4) and structuring to form stacks (21). A conductive film (6) is applied to the contact layer and the substrate removed. An independent claim is also included for the chip produced as above.
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公开(公告)号：DE102004016697A1
公开(公告)日：2005-09-22
申请号：DE102004016697
申请日：2004-04-05
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： PLOESL ANDREAS
Abstract: Production of a semiconductor chip comprises using a joining method in which separating regions (5) are free from solder (3). An independent claim is also included for a semiconductor chip obtained using the above process.
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Patent Agency Ranking
公开(公告)号：DE10355600A1
公开(公告)日：2005-06-30
申请号：DE10355600
申请日：2003-11-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAHN BERTHOLD , ILLEK STEFAN , GROETSCH STEFAN , PLOESL ANDREAS
IPC: H01L23/13 , H01L23/15 , H01L23/367 , H01L23/373 , H01L33/00 , H01L33/62 , H01L33/64 , H01S5/02 , H01S5/183 , H01L23/12
Abstract: A substrate layer (1) for the manufacture of a semiconductor chip incorporates a layer of electrical insulation (2) containing a ceramic- or aluminum nitride (AIN)-ceramic material.
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公开(公告)号：DE10303978A1
公开(公告)日：2003-11-27
申请号：DE10303978
申请日：2003-01-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STAUSS PETER , PLOESL ANDREAS
Abstract: Semiconductor component comprises a thin film semiconductor body (2) arranged on a support (4) containing germanium. An Independent claim is also included for a process for the production of a semiconductor component.
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公开(公告)号：DE10203795A1
公开(公告)日：2003-08-21
申请号：DE10203795
申请日：2002-01-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： PLOESL ANDREAS , HAERLE VOLKER , KAISER STEPHAN , HAHN BERTHOLD , FEHRER MICHAEL , OTTE FRANK
Abstract: Production of a semiconductor component comprises separating a semiconductor layer (2) from a substrate (1) by irradiating with a laser beam having a plateau-shaped spatial beam profile. Preferred Features: The laser beam is produced an excimer laser containing a rare gas-halogen compound, especially XeF, XeBr, KrCl or KrF as laser-active medium. The laser beam has a rectangular or trapezoidal spatial beam profile. The laser beam has a wavelength of 200-400 nm.
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公开(公告)号：DE10254457A1
公开(公告)日：2003-07-24
申请号：DE10254457
申请日：2002-11-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： PLOESL ANDREAS , HAHN BERTHOLD , EISERT DOMINIK , KAISER STEPHAN
Abstract: Semiconductor layers are fabricated by applying a useful layer containing semiconductor layer(s) to a carrier, applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer at a joining temperature, and mechanically stripping away the carrier. Fabrication of semiconductor layers involves applying a useful layer containing semiconductor layer(s) to a carrier (1), applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer (2) at a joining temperature, and mechanically stripping away the carrier at temperature greater than or equal to the joining temperature and less than a melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier (3) is stripped away from the carrier.
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公开(公告)号：DE102008050538A1
公开(公告)日：2010-02-11
申请号：DE102008050538
申请日：2008-10-06
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： KAISER STEPHAN , PLOESL ANDREAS
Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.
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