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公开(公告)号：DE102011101323A1
公开(公告)日：2012-11-15
申请号：DE102011101323
申请日：2011-05-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STEEGMUELLER ULRICH , MOENCH WOLFGANG
Abstract: Es wird ein optoelektronisches Bauteil (100) angegeben, mit – zumindest einem optischen Phasenschalter (1), der dazu eingerichtet ist, zumindest eine Phasenbeziehung von auf ihn auftreffender und zumindest teilweise durch ihn hindurch tretender elektromagnetischer Strahlung einzustellen und/oder zu verändern; – zumindest einer Ansteuervorrichtung (2) zum Betreiben des optischen Phasenschalters (1), wobei – der optische Phasenschalter (1) in zumindest zwei Betriebsmodi (B1, B2) betreibbar ist, – die elektromagnetische Strahlung zwischen dem Eintreten in den optischen Phasenschalter (1) und dem Austreten aus dem optischen Phasenschalter (1) eine vorgebbare optische Weglänge (Lopt) zurücklegt, und wobei – unterschiedliche Betriebsmodi (B1, B2) unterschiedlichen optischen Weglängen (Lopt) zugeordnet sind.
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公开(公告)号：DE502005006760D1
公开(公告)日：2009-04-16
申请号：DE502005006760
申请日：2005-09-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ALBRECHT TONY , LUTGEN STEPHAN , REILL WOLFGANG , SCHWARZ THOMAS , STEEGMUELLER ULRICH
Abstract: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.
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公开(公告)号：DE102006042195A1
公开(公告)日：2008-03-27
申请号：DE102006042195
申请日：2006-09-08
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STEEGMUELLER ULRICH , SCHWARZ THOMAS , KUEHNELT MICHAEL
Abstract: The invention specifies an etalon (1) which is provided as frequency-selective element in a resonator (30, 11) of an opto-electronic semiconductor apparatus, where the etalon (1) comprises an etalon layer (22) which contains at least one of the following materials or is made from one of these materials: glass, semiconductor material.
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公开(公告)号：DE102006017293A1
公开(公告)日：2007-07-05
申请号：DE102006017293
申请日：2006-04-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SCHULZ ROLAND , STEEGMUELLER ULRICH , SINGER FRANK , SCHWARZ THOMAS
Abstract: The method involves providing a connection carrier assembly (50) comprising multiple connection carriers (14), which are mechanically and fixedly connected to one another. A surface-emitting semiconductor body (1) is arranged on a carrier of the connection carrier assembly and partially completes the semiconductor device.
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公开(公告)号：DE102004012014A1
公开(公告)日：2005-10-13
申请号：DE102004012014
申请日：2004-03-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SPAETH WERNER , GRAMANN WOLFGANG , GROETSCH STEFAN , SCHWARZ THOMAS , STEEGMUELLER ULRICH , KUEHNELT MICHAEL
IPC: H01S3/094 , H01S3/0941 , H01S3/109 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/04 , H01S5/06 , H01S5/14 , H01S5/183
Abstract: Surface emitting laser comprises semiconductor chip (1), external resonator mirror (2) and at least one optical pumping device (3) of chip. Pumping device contains pump laser (4), beam shaper (5), reverse element (8) and concave mirror (9). Pumping device includes assembly platform (6) for its elements with main surface (7) facing elements of pumping device. Preferably platform main surface is located orthogonally to main radiation direction (11) of surface emitting laser.
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Patent Agency Ranking
公开(公告)号：DE102004015446A1
公开(公告)日：2005-08-04
申请号：DE102004015446
申请日：2004-03-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SCHWARZ THOMAS , STEEGMUELLER ULRICH , KUEHNELT MICHAEL , GROETSCH STEFAN
IPC: H01S5/024
Abstract: Laminated heat sink (1) for discrete semiconductor component (9) with first expansion coefficient has top (5) and bottom side (6), adjacent to which is metal outer layer (7,8) with second expansion coefficient.Inner layer (2) of semiconductor material has third expansion coefficient and is mechanically coupled to outer layer thus outer layer of top or bottom side has expansion coefficient approximately as first expansion coefficient of semiconductor component. Independent claims are included for electronic module with heat sink and method for forming such heat sink.
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公开(公告)号：DE10253907A1
公开(公告)日：2004-04-01
申请号：DE10253907
申请日：2002-11-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： GRAMANN WOLFGANG , DACHS JUERGEN , KAEMPF MATHIAS , STEEGMUELLER ULRICH , SINGER FRANK
Abstract: The device has a substrate, a laser component whose radiation axis is essentially parallel to a first main plane, a deflector for deflecting the beam perpendicularly to a main surface, at least one signal detector for detecting laser radiation reflected from the data memory and an optical element joined to the substrate via a supporting element(s) for guiding the deflected beam to the data memory and the reflected beam to the signal detector(s). The device has a substrate (12) with a main surface, an edge emitting laser component (30) whose radiation axis is essentially parallel to the first main plane, a deflector (36) on the main substrate surface for deflecting the laser radiation (32) essentially perpendicularly to the main surface, at least one signal detector (20,22) for detecting the laser radiation reflected from the data memory and an optical element (40) for guiding the deflected beam to the data memory and the reflected beam to the signal detector(s). The optical element is joined to the substrate via at least one supporting element (36,38). AN Independent claim is also included for the following: (a) a method of manufacturing an inventive scanning head.
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公开(公告)号：DE502006004844D1
公开(公告)日：2009-10-29
申请号：DE502006004844
申请日：2006-09-29
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： KUEHNELT MICHAEL , STEEGMUELLER ULRICH , REILL WOLFGANG , SCHWARZ THOMAS , SINGER FRANK
Abstract: The laser has a modes selective device provided for rejection of higher resonator modes of the laser. The selective device is fixedly connected with a semiconductor body (3). The selective device is arranged in an optical path of a pumping radiation source. An optical unit (11) is used as a heat sink and provided in thermal contact with a radiation passage surface of the body. A non-optical linear crystal is arranged in a resonator of the laser. The optical unit is provided for frequency selection of the laser radiation passing through the optical unit.
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公开(公告)号：DE102004012014B4
公开(公告)日：2009-09-10
申请号：DE102004012014
申请日：2004-03-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SPAETH WERNER , GRAMANN WOLFGANG , GROETSCH STEFAN , SCHWARZ THOMAS , STEEGMUELLER ULRICH , KUEHNELT MICHAEL
IPC: H01S5/04 , H01S3/094 , H01S3/0941 , H01S3/109 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/06 , H01S5/14 , H01S5/183
Abstract: Surface emitting laser comprises semiconductor chip (1), external resonator mirror (2) and at least one optical pumping device (3) of chip. Pumping device contains pump laser (4), beam shaper (5), reverse element (8) and concave mirror (9). Pumping device includes assembly platform (6) for its elements with main surface (7) facing elements of pumping device. Preferably platform main surface is located orthogonally to main radiation direction (11) of surface emitting laser.
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公开(公告)号：DE102008009110A1
公开(公告)日：2009-08-20
申请号：DE102008009110
申请日：2008-02-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SCHWARZ THOMAS , SCHULZ ROLAND , UNOLD HEIKO , STEEGMUELLER ULRICH , KUEHNELT MICHAEL , DACHS JUERGEN
IPC: H01S5/18
Abstract: The semiconductor laser module has a module carrier (20) with a mounting surface (21), a pumping device (1) arranged on the mounting surface, and a surface-emitting diode laser, which is also arranged on the mounting surface. A frequency converting device (6) is arranged on the mounting surface. The mounting surface of the module carrier has an area of 100 millimeter. The surface-emitting diode laser is fixed with a mounting surface of a mounting block (3) on the mounting surface of the module carrier.
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