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公开(公告)号：JP2004331222A
公开(公告)日：2004-11-25
申请号：JP2004099845
申请日：2004-03-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： KAEMPF MATHIAS , SINGER FRANK , DACHS JUERGEN , BACHLER ALFRED
IPC: B65D85/86 , H01L21/673 , H01L21/68
CPC classification number: H01L21/67356 , Y10S414/135
Abstract: PROBLEM TO BE SOLVED: To provide a chip container or a chip carrying container capable of storing and carrying opto-electronic elements and a manufacturing method for the same, in particular a chip container capable of managing and carrying respective chips without substantially damaging and contaminating them, and a manufacturing method for the same. SOLUTION: The chip container 7 equipped with a number of cavities 8 for respective semiconductor chips 9 has a cavity plate 2 equipped with etched cavities 8. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号：JP2009194389A
公开(公告)日：2009-08-27
申请号：JP2009032915
申请日：2009-02-16
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： DACHS JUERGEN , KUEHNELT MICHAEL , SCHULZ ROLAND , SCHWARZ THOMAS , UNOLD HEIKO , STEEGMUELLER ULRICH
IPC: H01S5/022
CPC classification number: H01S5/141 , H01S3/0815 , H01S3/109 , H01S5/005 , H01S5/02248 , H01S5/041 , H01S5/183 , H01S5/4056
Abstract: PROBLEM TO BE SOLVED: To provide an especially compact semiconductor laser module.
SOLUTION: The semiconductor laser module includes a module carrier with a fixing surface, a pumping device arranged on the fixing surface, a surface emission semiconductor laser arranged on the fixing surface, and a frequency converter arranged on the fixing surface, wherein the maximum fixing surface of the module carrier is 100 m
2 , the surface emission semiconductor laser includes a fixing block having an upper surface and a fixing surface, and at least one semiconductor laser chip arranged on the upper surface of the fixing block, the fixing surface of the fixing block extends substantially perpendicularly to the upper surface of the fixing block, and the surface emission semiconductor laser is fixed onto the fixing surface of the module carrier by the fixing surface of the module carrier.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：提供特别紧凑的半导体激光器模块。 解决方案：半导体激光器模块包括具有固定表面的模块载体，布置在固定表面上的泵送装置，布置在固定表面上的表面发射半导体激光器和布置在固定表面上的变频器，其中 模块载体的最大固定面为100微米，表面发射半导体激光器包括具有上表面和固定表面的固定块，以及至少一个半导体激光芯片，其布置在 固定块，固定块的固定表面基本上垂直于固定块的上表面延伸，并且表面发射半导体激光器通过模块载体的固定表面固定到模块载体的固定表面上。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2009194388A
公开(公告)日：2009-08-27
申请号：JP2009031414
申请日：2009-02-13
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： DACHS JUERGEN , ILLEK STEFAN , SCHULZ ROLAND , SCHWARZ THOMAS , SINGER FRANK , UNOLD HEIKO
IPC: H01S5/022
CPC classification number: H01S5/0201
Abstract: PROBLEM TO BE SOLVED: To manufacture exceptionally compact semiconductor lasers in high-volume. SOLUTION: A method of manufacturing a plurality of semiconductor lasers 100 includes (a) a step of preparing a supporting wafer 30, (b) a step of forming a complex 70 by fixing a plurality of semiconductor laser chips 4 to the surface 31 of the supporting wafer 30, and (c) a step of forming a plurality of semiconductor lasers 100 by dividing the complex 70. The semiconductor laser 100 has a fixing block 3 and at least one semiconductor laser chip 4. The fixing block 3 has a fixing surface 13, and the fixing surface 13 is extended substantially perpendicularly to the surface 12 of the fixing block 3. The semiconductor laser chip 4 is arranged on the fixing block 3, and the fixing surface 13 is formed when the complex 70 is divided. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：制造大容量的非常紧凑的半导体激光器。 解决方案：制造多个半导体激光器100的方法包括（a）制备支撑晶片30的步骤，（b）通过将多个半导体激光芯片4固定在表面上来形成复合体70的步骤 31，并且（c）通过分开复合体70形成多个半导体激光器100的步骤。半导体激光器100具有固定块3和至少一个半导体激光芯片4.固定块3具有 固定表面13和固定表面13基本上垂直于固定块3的表面12延伸。半导体激光芯片4设置在固定块3上，并且当复合体70被分割时形成固定表面13 。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：DE102007032068A1
公开(公告)日：2009-01-15
申请号：DE102007032068
申请日：2007-07-10
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SINGER FRANK , STEEGMUELLER ULRICH , DACHS JUERGEN
Abstract: A transparent material, especially a 6 inch glass wafer, is divided into strips (2) by sawing. Cut surfaces are smoothed. The strips are bonded to a substrate (4), e.g. a silicon wafer. The substrate and bonded strips are divided, in order to make the optical components required. Opposite planar surfaces of the glass are parallel; at least one of them has an anti-reflective coating. At least one has a reflective coating. The cut strips are arranged so that two or more cut surfaces are smoothed together, before bonding. The smoothed strips are bonded to the substrate by their smoothed, cut sides. The substrate is made of silicon. Anodic bonding, or alternatively low-temperature bonding, is used. Strips are fastened at right angles to the surface of the substrate, and are mutually-parallel. Spacers are used to align the strips on the substrate. These are removed before dividing the substrate with its bonded strips. The substrate and bonded strips are bodily-divided, to make carriers with optical elements, in such a manner that after division, only one optical element is present on each carrier. Alternatively, the division may leave numbers of optical elements (cut from their respective original strips) on a single carrier. This stage of division is also achieved by sawing.
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公开(公告)号：DE10142010A1
公开(公告)日：2003-04-03
申请号：DE10142010
申请日：2001-08-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： DACHS JUERGEN , WEISS GUIDO , ZULL HERIBERT
IPC: G02B3/00 , G03F7/00 , H01L21/3065 , H01L21/306
Abstract: Production of a lens made from a gallium phosphide (GaP) based semiconductor material comprises: (a) preparing a substrate made from a GaP-based semiconductor material; (b) applying a photolacquer on the substrate; structuring the layer and rounding into a lacquer lens by heating; and (c) etching the photolacquer and the substrate in a plasma etching process. Preferably the substrate is etched against the photolacquer layer with a selectivity of 0.5-4. The flow of process gases introduced during the plasma etching is adjusted so that the selectivity of the etching of the semiconductor layer/photolacquer remains constant. During plasma etching, Cl2 or SiCl4, a noble gas, a fluorine compound and a hydrogen compound are introduced.
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Patent Agency Ranking
公开(公告)号：DE10142008A1
公开(公告)日：2003-03-27
申请号：DE10142008
申请日：2001-08-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： DACHS JUERGEN , WEISS GUIDO , ZULL HERIBERT
IPC: H01L21/306 , H01L21/308 , B81C1/00 , H01L21/3065 , H01S5/026
Abstract: The process gases comprise a chlorine-containing gas, noble gas, a fluorine compound and a hydrogen compound. The flow is so proportioned that the GaP based semiconductor layer is etched with a selectivity of 0.5-4, in relation to etching of the photolacquer layer. An Independent claim is included for the method photo lacquer application, by coating and structuring, before plasma etching under the conditions described.
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公开(公告)号：DE102008009108A1
公开(公告)日：2009-08-20
申请号：DE102008009108
申请日：2008-02-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： DACHS JUERGEN , ILLEK STEFAN , SINGER FRANK , SCHWARZ THOMAS , SCHULZ ROLAND , UNOLD HEIKO
Abstract: The method involves preparing a supporting disk made of ceramic material, and producing wafer interconnections (40) by a set of semiconductor laser chips (4) on an upper surface of the supporting disk. The interconnections are isolated by a set of semiconductor lasers (100) that includes a mounting block (3) with a mounting surface, which runs perpendicular to an upper surface (12) of the mounting block. One of the chips is arranged on the upper surface of the mounting block, where the mounting surface is manufactured during the isolation of the interconnections. An independent claim is also included for a semiconductor laser comprising a mounting block.
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公开(公告)号：DE10253907A1
公开(公告)日：2004-04-01
申请号：DE10253907
申请日：2002-11-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： GRAMANN WOLFGANG , DACHS JUERGEN , KAEMPF MATHIAS , STEEGMUELLER ULRICH , SINGER FRANK
Abstract: The device has a substrate, a laser component whose radiation axis is essentially parallel to a first main plane, a deflector for deflecting the beam perpendicularly to a main surface, at least one signal detector for detecting laser radiation reflected from the data memory and an optical element joined to the substrate via a supporting element(s) for guiding the deflected beam to the data memory and the reflected beam to the signal detector(s). The device has a substrate (12) with a main surface, an edge emitting laser component (30) whose radiation axis is essentially parallel to the first main plane, a deflector (36) on the main substrate surface for deflecting the laser radiation (32) essentially perpendicularly to the main surface, at least one signal detector (20,22) for detecting the laser radiation reflected from the data memory and an optical element (40) for guiding the deflected beam to the data memory and the reflected beam to the signal detector(s). The optical element is joined to the substrate via at least one supporting element (36,38). AN Independent claim is also included for the following: (a) a method of manufacturing an inventive scanning head.
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公开(公告)号：DE102012215265A1
公开(公告)日：2014-03-06
申请号：DE102012215265
申请日：2012-08-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： AUEN KARSTEN , DACHS JUERGEN , ENZMANN ROLAND , GRAUL MARKUS , HANEDER STEPHAN , ROZYNSKI ANDREAS , SWIETLIK TOMASZ
Abstract: Die Erfindung betrifft ein Verfahren zum Herstellen einer Laserdiode, wobei mehrere Laserdioden auf einem Wafer hergestellt werden, wobei der Wafer in Waferstücke zerteilt wird, wobei jedes Waferstück mehrere Laserdioden nebeneinander aufweist, wobei ein Waferstück in eine erste Halterung eingelegt wird, wobei die erste Halterung ein erstes Abdeckelement aufweist, das über eine Vorderseite des Waferstücks hinausragt und einen unteren Bereich der Vorderseite des Waferstückes abschattet, wobei auf einen nicht abgeschatteten oberen Bereich der Vorderseite des Waferstückes eine Spiegelschicht abgeschieden wird, wobei das Waferstück in eine zweite Halterung eingelegt wird, wobei die zweite Halterung ein zweites Abdeckelement aufweist, wobei das zweite Abdeckelement die Spiegelschicht des oberen Bereiches der Vorderseite abschattet, wobei auf einen nicht abgeschatteten unteren Bereich der Vorderseite des Waferstückes eine elektrisch leitende Kontaktschicht abgeschieden wird, wobei das Waferstück anschließend in einzelne Laserdioden aufgeteilt wird. Zudem betrifft die Erfindung eine einfach herzustellende Laserdiode und Halterungen zur Durchführung des Verfahrens.
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公开(公告)号：DE102008010297A1
公开(公告)日：2009-10-29
申请号：DE102008010297
申请日：2008-02-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： SCHWARZ THOMAS , DACHS JUERGEN , SINGER FRANK , KUEHNELT MICHAEL
Abstract: The device has a heating element provided for a frequency conversion crystal (7) and including an electric insulation support (1) that consists of a material, which possesses thermal conductivity of 3 watt/meter Kelvin or glass. An electric thermal resistor (2) is applied on an upper surface (5) of the support, and is provided between the support and the frequency conversion crystal. The support is provided with a recess at the upper surface, where the support has thickness of 200 micrometers and 400 micrometers at a region of the recess. An independent claim is also included for a method for producing a frequency conversion device.
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